Hung; Hoiman

Patent Applications and Registrations

Patent applications and USPTO patent grants for Hung; Hoiman.The latest application filed is for "lpcvd gate hard mask".

Company Profile

0.6.7

Hung; Hoiman - Cupertino CA
Hung; Hoiman - San Jose CA
Hung, Hoiman - Cupertion CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
LPCVD gate hard mask Grant 7,547,621 - Kanuri , et al. June 16, 2	2009-06-16
LPCVD gate hard mask App 20080026584 - Kanuri; Rajesh ; et al.	2008-01-31
Method for modifying dielectric characteristics of dielectric layers Grant 6,921,727 - Chiang , et al. July 26, 2	2005-07-26
Highly selective process for etching oxide over nitride using hexafluorobutadiene Grant 6,849,193 - Hung , et al. February 1, 2	2005-02-01
Method for modifying dielectric characteristics of dielectric layers App 20040180556 - Chiang, Kang-Lie ; et al.	2004-09-16
Etch process for dielectric materials comprising oxidized organo silane materials Grant 6,762,127 - Boiteux , et al. July 13, 2	2004-07-13
Integrated equipment set for forming a low K dielectric interconnect on a substrate App 20040007325 - Pan, Judon Tony ; et al.	2004-01-15
Etch process for dielectric materials comprising oxidized organo silane materials App 20030073321 - Boiteux, Yves Pierre ; et al.	2003-04-17
Top gas feed lid for semiconductor processing chamber App 20030037879 - Askarinam, Farahmand E. ; et al.	2003-02-27
Highly selective process for etching oxide over nitride using hexafluorobutadiene App 20030000913 - Hung, Hoiman ; et al.	2003-01-02
Process for etching oxide using a hexafluorobutadiene and manifesting a wide process window Grant 6,387,287 - Hung , et al. May 14, 2	2002-05-14
In-situ integrated oxide etch process particularly useful for copper dual damascene Grant 6,380,096 - Hung , et al. April 30, 2	2002-04-30
In-situ Integrated Oxide Etch Process Particularly Useful For Copper Dual Damascene App 20010008226 - HUNG, HOIMAN ; et al.	2001-07-19

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