loadpatents
Patent applications and USPTO patent grants for Hueting; Raymond J. E..The latest application filed is for "semiconductor devices with a field shaping region".
Patent | Date |
---|---|
Semiconductor devices with a field shaping region Grant 7,786,506 - Heringa , et al. August 31, 2 | 2010-08-31 |
Trench MOSFET Grant 7,696,599 - Hueting , et al. April 13, 2 | 2010-04-13 |
Lateral field-effect transistor having an insulated trench gate electrode Grant 7,671,440 - Hueting , et al. March 2, 2 | 2010-03-02 |
Semiconductor Devices with a Field Shaping Region App 20100038676 - Heringa; Anco ;   et al. | 2010-02-18 |
Trench MOS structure Grant 7,629,647 - Hueting , et al. December 8, 2 | 2009-12-08 |
Nanowire semiconductor device Grant 7,538,337 - Hijzen , et al. May 26, 2 | 2009-05-26 |
Semiconductor devices with a field shaping region Grant 7,423,299 - Heringa , et al. September 9, 2 | 2008-09-09 |
Lateral Field-Effect Transistor Having an Insulated Trench Gate Electrode App 20080203473 - Hueting; Raymond J. E. ;   et al. | 2008-08-28 |
Trench insulated gate field effect transistor Grant 7,408,223 - Hueting August 5, 2 | 2008-08-05 |
Nanowire Semiconductor Device App 20080029909 - Hijzen; Erwin A. ;   et al. | 2008-02-07 |
Vertical insulated gate transistor and manufacturing method Grant 7,262,460 - Schmitz , et al. August 28, 2 | 2007-08-28 |
Insulated gate power semiconductor devices Grant 7,235,842 - Hueting , et al. June 26, 2 | 2007-06-26 |
Trench insulated gate field effect transistor App 20070132014 - Hueting; Raymond J.E. | 2007-06-14 |
Trench insulated gate field effect transistor App 20070126055 - Hueting; Raymond J. E. ;   et al. | 2007-06-07 |
Trench mosfet App 20070108515 - Hueting; Raymond J.E. ;   et al. | 2007-05-17 |
Method of maufacturing a trench-gate semiconductor device Grant 7,199,010 - Hijzen , et al. April 3, 2 | 2007-04-03 |
Edge termination in MOS transistors Grant 7,160,793 - Hueting , et al. January 9, 2 | 2007-01-09 |
Insulated gate power semiconductor devices App 20060189063 - Hueting; Raymond J.E. ;   et al. | 2006-08-24 |
Trenched semiconductor devices and their manufacture Grant 7,033,889 - Hijzen , et al. April 25, 2 | 2006-04-25 |
Vertical insulated gate transistor and manufacturing method App 20060049453 - Schmitz; Jurriaan ;   et al. | 2006-03-09 |
Method of manufacturing a trench-gate semiconductor device App 20060017097 - Hijzen; ErwinA ;   et al. | 2006-01-26 |
Trenched semiconductor devices and their manufacture App 20060008991 - Hijzen; Erwin A. ;   et al. | 2006-01-12 |
Trenched semiconductor devices and their manufacture Grant 6,956,264 - Hijzen , et al. October 18, 2 | 2005-10-18 |
Edge termination in MOS transistors Grant 6,936,890 - Hueting , et al. August 30, 2 | 2005-08-30 |
Edge termination in MOS transistors App 20050156232 - Hueting, Raymond J.E. ;   et al. | 2005-07-21 |
Edge termination in a trench-gate MOSFET Grant 6,833,583 - In't Zandt , et al. December 21, 2 | 2004-12-21 |
Trench-gate semiconductor devices and the manufacture thereof Grant 6,784,488 - Huang , et al. August 31, 2 | 2004-08-31 |
Trench bipolar transistor Grant 6,777,780 - Hueting , et al. August 17, 2 | 2004-08-17 |
Field effect device having a drift region and field shaping region used as capacitor dielectric Grant 6,774,434 - Hueting , et al. August 10, 2 | 2004-08-10 |
Trenched semiconductor devices and their manufacture App 20030146470 - Hijzen, Erwin A. ;   et al. | 2003-08-07 |
Field-effect semiconductor devices Grant 6,600,194 - Hueting , et al. July 29, 2 | 2003-07-29 |
Trench-gate semiconductor devices and the manufacture thereof App 20030094650 - Huang, Eddie ;   et al. | 2003-05-22 |
Field effect transistor semiconductor device App 20030094649 - Hueting, Raymond J.E. ;   et al. | 2003-05-22 |
Semiconductor device Grant 6,559,502 - Hueting , et al. May 6, 2 | 2003-05-06 |
Trench-gate semiconductor devices and their manufacture Grant 6,541,817 - Hurkx , et al. April 1, 2 | 2003-04-01 |
Semiconductor device Grant 6,534,823 - Hueting , et al. March 18, 2 | 2003-03-18 |
Edge termination in MOS transistors App 20030047776 - Hueting, Raymond J.E. ;   et al. | 2003-03-13 |
Edge termination in a trench-gate MOSFET App 20030047777 - In't Zandt, Michael A.A. ;   et al. | 2003-03-13 |
Trench bipolar transistor App 20030030488 - Hueting, Raymond J.E. ;   et al. | 2003-02-13 |
Semiconductor device with FET MESA structure and vertical contact electrodes Grant 6,515,348 - Hueting , et al. February 4, 2 | 2003-02-04 |
Trench-gate field-effect transistors and their manufacture Grant 6,509,608 - Hueting January 21, 2 | 2003-01-21 |
Manufacture of trench-gate semiconductor devices App 20020137291 - Zandt In't, Michael A.A. ;   et al. | 2002-09-26 |
Cellular trench-gate field-effect transistors Grant 6,359,308 - Hijzen , et al. March 19, 2 | 2002-03-19 |
Manufacture of trench-gate semiconductor devices App 20020022324 - Hueting, Raymond J.E. ;   et al. | 2002-02-21 |
Semiconductor device App 20010045599 - Hueting, Raymond J.E. ;   et al. | 2001-11-29 |
Semiconductor device App 20010045578 - Hueting, Raymond J.E. ;   et al. | 2001-11-29 |
Electronic device comprising a trench gate field effect device Grant 6,320,223 - Hueting , et al. November 20, 2 | 2001-11-20 |
Semiconductor device App 20010040273 - Hueting, Raymond J.E. ;   et al. | 2001-11-15 |
Trench Semiconductor Device Manufacture With A Thicker Upper Insulating Layer App 20010036704 - Hueting, Raymond J.E. ;   et al. | 2001-11-01 |
Field-effect semiconductor devices App 20010020720 - Hueting, Raymond J.E. ;   et al. | 2001-09-13 |
Trenched schottky rectifiers App 20010010385 - Hijzen, Erwin A. ;   et al. | 2001-08-02 |
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