Patent | Date |
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Semiconductor Device Having Contact Layers And Manufacturing Method App 20210202304 - Huesken; Holger ;   et al. | 2021-07-01 |
Power semiconductor device Grant 10,998,399 - Hsieh , et al. May 4, 2 | 2021-05-04 |
Semiconductor device including first and second contact layers and manufacturing method Grant 10,950,494 - Huesken , et al. March 16, 2 | 2021-03-16 |
Power Semiconductor Device App 20200013854 - Hsieh; Alice Pei-Shan ;   et al. | 2020-01-09 |
Semiconductor Device Including First and Second Contact Layers and Manufacturing Method App 20190229013 - Huesken; Holger ;   et al. | 2019-07-25 |
Method for manufacturing a power semiconductor device Grant 10,103,227 - Huesken , et al. October 16, 2 | 2018-10-16 |
Semiconductor device with a reduced band gap zone Grant 9,859,272 - Schulze , et al. January 2, 2 | 2018-01-02 |
Method for Manufacturing a Power Semiconductor Device App 20170338306 - Huesken; Holger ;   et al. | 2017-11-23 |
Power semiconductor device Grant 9,577,080 - Huesken , et al. February 21, 2 | 2017-02-21 |
Semiconductor Device with a Reduced Band Gap Zone App 20170025408 - Schulze; Hans-Joachim ;   et al. | 2017-01-26 |
Transistor device with integrated gate-resistor Grant 9,548,370 - Voss , et al. January 17, 2 | 2017-01-17 |
Power semiconductor device Grant 9,515,149 - Pfirsch , et al. December 6, 2 | 2016-12-06 |
Insulated gate bipolar transistor Grant 9,490,354 - Huesken , et al. November 8, 2 | 2016-11-08 |
Semiconductor device with recombination region Grant 9,419,080 - Laven , et al. August 16, 2 | 2016-08-16 |
Power Semiconductor Device App 20160035821 - Pfirsch; Frank Dieter ;   et al. | 2016-02-04 |
Power Semiconductor Device App 20150357449 - Huesken; Holger ;   et al. | 2015-12-10 |
Transistor Device With Integrated Gate-resistor App 20150228744 - Voss; Stephan ;   et al. | 2015-08-13 |
Semiconductor Device with Recombination Region App 20150162406 - Laven; Johannes Georg ;   et al. | 2015-06-11 |
Power MOS transistor with integrated gate-resistor Grant 9,041,120 - Voss , et al. May 26, 2 | 2015-05-26 |
Semiconductor device, a semiconductor wafer structure, and a method for forming a semiconductor wafer structure Grant 9,013,027 - Huesken , et al. April 21, 2 | 2015-04-21 |
Semiconductor Device, a Semiconductor Wafer Structure, and a Method for Forming a Semiconductor Wafer Structure App 20150028456 - Huesken; Holger ;   et al. | 2015-01-29 |
Power MOS Transistor with Integrated Gate-Resistor App 20150028383 - Voss; Stephan ;   et al. | 2015-01-29 |
IGBT Having an Emitter Region with First and Second Doping Regions App 20150008477 - Huesken; Holger ;   et al. | 2015-01-08 |
Insulated Gate Bipolar Transistor App 20140319578 - Huesken; Holger ;   et al. | 2014-10-30 |
Power semiconductor diode, IGBT, and method for manufacturing thereof Grant 8,809,902 - Huesken , et al. August 19, 2 | 2014-08-19 |
Power Semiconductor Diode, Igbt, And Method For Manufacturing Thereof App 20130092977 - Huesken; Holger ;   et al. | 2013-04-18 |
IGBT with monolithic integrated antiparallel diode Grant 7,112,868 - Willmeroth , et al. September 26, 2 | 2006-09-26 |
Circuit configuration for off-load switching, switch mode power supply, clocked supply, voltage regulator, lamp switch, and methods for operating the circuit configuration Grant 7,005,761 - Deboy , et al. February 28, 2 | 2006-02-28 |
IGBT with monolithic integrated antiparallel diode App 20040144992 - Willmeroth, Armin ;   et al. | 2004-07-29 |
Circuit configuration for off-load switching, switch mode power supply, clocked supply, voltage regulator, lamp switch, and methods for operating the circuit configuration App 20030094857 - Deboy, Gerald ;   et al. | 2003-05-22 |