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name:-0.039788961410522
name:-0.057962894439697
name:-0.00048995018005371
Hudgens; Stephen J. Patent Filings

Hudgens; Stephen J.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Hudgens; Stephen J..The latest application filed is for "semiconductor phase change memory using face center cubic crystalline phase change material".

Company Profile
0.55.30
  • Hudgens; Stephen J. - Santa Clara CA
  • Hudgens; Stephen J. - Rochester Hills MI
  • Hudgens; Stephen J. - Troy MI
  • Hudgens; Stephen J. - Southfield MI
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Semiconductor phase change memory using face center cubic crystalline phase change material
Grant 8,699,267 - Dennison , et al. April 15, 2
2014-04-15
Processing phase change material to improve programming speed
Grant 8,658,510 - Hudgens , et al. February 25, 2
2014-02-25
Semiconductor Phase Change Memory Using Face Center Cubic Crystalline Phase Change Material
App 20130270502 - Dennison; Charles H. ;   et al.
2013-10-17
Semiconductor phase change memory using multiple phase change layers
Grant 8,462,545 - Dennison , et al. June 11, 2
2013-06-11
Processing Phase Change Material to Improve Programming Speed
App 20120309161 - Hudgens; Stephen J. ;   et al.
2012-12-06
Semiconductor Phase Change Memory Using Multiple Phase Change Layers
App 20120256154 - DENNISON; CHARLES H. ;   et al.
2012-10-11
Processing phase change material to improve programming speed
Grant 8,269,206 - Hudgens , et al. September 18, 2
2012-09-18
Semiconductor phast change memory using multiple phase change layers
Grant 8,223,538 - Dennison , et al. July 17, 2
2012-07-17
Non-volatile memory device including phase-change material
Grant 8,222,625 - Ahn , et al. July 17, 2
2012-07-17
Semiconductor Phast Change Memory Using Multiple Phase Change Layers
App 20120081956 - Dennison; Charles H. ;   et al.
2012-04-05
Semiconductor phase change memory using multiple phase change layers
Grant 8,098,519 - Dennison , et al. January 17, 2
2012-01-17
Phase change memories with improved programming characteristics
Grant 8,062,921 - Wicker , et al. November 22, 2
2011-11-22
Processing Phase Change Material to Improve Programming Speed
App 20110168964 - Hudgens; Stephen J. ;   et al.
2011-07-14
Processing phase change material to improve programming speed
Grant 7,893,419 - Hudgens , et al. February 22, 2
2011-02-22
Semiconductor Phase Change Memory Using Multiple Phase Change Layers
App 20100200829 - Dennison; Charles H. ;   et al.
2010-08-12
Semiconductor phase change memory using multiple phase change layers
Grant 7,729,162 - Dennison , et al. June 1, 2
2010-06-01
Electrically rewritable non-volatile memory element and method of manufacturing the same
Grant 7,589,364 - Asano , et al. September 15, 2
2009-09-15
Programmable resistance memory element with multi-regioned contact
Grant 7,576,350 - Lowrey , et al. August 18, 2
2009-08-18
Phase Change Memories With Improved Programming Characteristics
App 20090142882 - Wicker; Guy C. ;   et al.
2009-06-04
Semiconductor phase change memory using multiple phase change layers
App 20090091971 - Dennison; Charles H. ;   et al.
2009-04-09
Phase change memories with improved programming characteristics
Grant 7,504,675 - Wicker , et al. March 17, 2
2009-03-17
Phase change memories with improved programming characteristics
App 20080203376 - Wicker; Guy C. ;   et al.
2008-08-28
Multilayered phase change memory
Grant 7,381,611 - Johnson , et al. June 3, 2
2008-06-03
Refreshing a phase change memory
App 20070279975 - Hudgens; Stephen J.
2007-12-06
Electrically rewritable non-volatile memory element and method of manufacturing the same
App 20070096074 - Asano; Isamu ;   et al.
2007-05-03
Electrically programmable memory element with reduced area of contact
App 20060274575 - Lowrey; Tyler ;   et al.
2006-12-07
Electrically programmable memory element with reduced area of contact
Grant 7,092,286 - Lowrey , et al. August 15, 2
2006-08-15
Multiple layer phase-change memory
Grant 6,998,289 - Hudgens , et al. February 14, 2
2006-02-14
Electrically programmable memory element with reduced area of contact
App 20060006443 - Lowrey; Tyler ;   et al.
2006-01-12
Electrically programmable memory element with reduced area of contact and method for making same
App 20050201136 - Lowrey, Tyler ;   et al.
2005-09-15
Electrically programmable memory element with reduced area of contact and method for making same
Grant 6,943,365 - Lowrey , et al. September 13, 2
2005-09-13
Method for making programmable resistance memory element
Grant 6,927,093 - Lowrey , et al. August 9, 2
2005-08-09
Modified contact for programmable devices
Grant 6,917,052 - Hudgens , et al. July 12, 2
2005-07-12
Multilayered phase change memory
App 20050030800 - Johnson, Brian G. ;   et al.
2005-02-10
Processing phase change material to improve programming speed
App 20050029502 - Hudgens, Stephen J.
2005-02-10
Programmable resistance memory element with multi-regioned contact
App 20050003602 - Lowrey, Tyler ;   et al.
2005-01-06
Modified contact for programmable devices
App 20040222445 - Hudgens, Stephen J. ;   et al.
2004-11-11
Method for making programmable resistance memory element
App 20040175857 - Lowrey, Tyler ;   et al.
2004-09-09
Modified contact for programmable devices
Grant 6,774,388 - Hudgens , et al. August 10, 2
2004-08-10
Method of making programmable resistance memory element
Grant 6,764,897 - Lowrey , et al. July 20, 2
2004-07-20
Method for making programmable resistance memory element
Grant 6,750,079 - Lowrey , et al. June 15, 2
2004-06-15
Reduced area intersection between electrode and programming element
App 20040087076 - Dennison, Charles H. ;   et al.
2004-05-06
Method of making programmable resistance memory element
App 20040038445 - Lowrey, Tyler ;   et al.
2004-02-26
Multiple layer phrase-change memory
Grant 6,674,115 - Hudgens , et al. January 6, 2
2004-01-06
Reduced area intersection between electrode and programming element
Grant 6,673,700 - Dennison , et al. January 6, 2
2004-01-06
Electrically programmable memory element with multi-regioned contact
Grant 6,617,192 - Lowrey , et al. September 9, 2
2003-09-09
Modified contact for programmable devices
App 20030094652 - Hudgens, Stephen J. ;   et al.
2003-05-22
Multiple layer phase-change memory
App 20030080427 - Hudgens, Stephen J. ;   et al.
2003-05-01
Compositionally modified resistive electrode
Grant 6,555,860 - Lowrey , et al. April 29, 2
2003-04-29
Multiple layer phase-change memory
App 20030071289 - Hudgens, Stephen J. ;   et al.
2003-04-17
Modified contact for programmable devices
Grant 6,511,862 - Hudgens , et al. January 28, 2
2003-01-28
Multiple layer phase-change memory
Grant 6,507,061 - Hudgens , et al. January 14, 2
2003-01-14
Reduced area intersection between electrode and programming element
App 20030003691 - Dennison, Charles H. ;   et al.
2003-01-02
Modified Contact For Programmable Devices
App 20030001211 - Hudgens, Stephen J. ;   et al.
2003-01-02
Method for making programmable resistance memory element
App 20020045323 - Lowrey, Tyler ;   et al.
2002-04-18
Compositionally modified resistive electrode
App 20020038872 - Lowrey, Tyler A. ;   et al.
2002-04-04
Electrically programmable memory element with reduced area of contact and method for making same
App 20020036931 - Lowrey, Tyler ;   et al.
2002-03-28
Electrically erasable memory elements having reduced switching current requirements and increased write/erase cycle life
Grant 5,341,328 - Ovshinsky , et al. * August 23, 1
1994-08-23
Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements
Grant 5,335,219 - Ovshinsky , et al. August 2, 1
1994-08-02
Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
Grant 5,296,716 - Ovshinsky , et al. * March 22, 1
1994-03-22
Electrically erasable phase change memory
Grant 5,166,758 - Ovshinsky , et al. November 24, 1
1992-11-24
Method of making synthetically engineered materials
Grant 5,032,193 - Ovshinsky , et al. July 16, 1
1991-07-16
Method of creating a high flux of activated species for reaction with a remotely located substrate
Grant 4,937,094 - Doehler , et al. June 26, 1
1990-06-26
Method for the high rate plasma deposition of high quality material
Grant 4,883,686 - Doehler , et al. November 28, 1
1989-11-28
Thin film field effect transistor and method of making same
Grant 4,843,443 - Ovshinsky , et al. June 27, 1
1989-06-27
Coated article and method of manufacturing the article
Grant 4,783,374 - Custer , et al. November 8, 1
1988-11-08
Thin film field effect transistor and method of making same
Grant 4,769,338 - Ovshinsky , et al. September 6, 1
1988-09-06
Thin film electro-optical devices
Grant 4,766,471 - Ovshinsky , et al. August 23, 1
1988-08-23
Large area array of thin film photosensitive elements for image detection
Grant 4,739,414 - Pryor , et al. April 19, 1
1988-04-19
Plasma deposited coatings, and low temperature plasma method of making same
Grant 4,737,379 - Hudgens , et al. April 12, 1
1988-04-12
Improved method of making a photoconductive member
Grant 4,715,927 - Johncock , et al. * December 29, 1
1987-12-29
Method of depositing thin films using microwave energy
Grant 4,701,343 - Ovshinsky , et al. * October 20, 1
1987-10-20
Integrated circuit compatible thin film field effect transistor and method of making same
Grant 4,673,957 - Ovshinsky , et al. June 16, 1
1987-06-16
Thin film field effect transistor
Grant 4,670,763 - Ovshinsky , et al. June 2, 1
1987-06-02
Integrated circuit compatible thin film field effect transistor and method of making same
Grant 4,668,968 - Ovshinsky , et al. May 26, 1
1987-05-26
Method of depositing semiconductor films by free radical generation
Grant 4,664,937 - Ovshinsky , et al. May 12, 1
1987-05-12
Microwave method of making semiconductor members
Grant 4,619,729 - Johncock , et al. * October 28, 1
1986-10-28
Method of depositing semiconductor films by free radical generation
Grant 4,615,905 - Ovshinsky , et al. October 7, 1
1986-10-07
Electrophotographic photoreceptor and method for the fabrication thereof
Grant 4,582,773 - Johncock , et al. April 15, 1
1986-04-15
Method of making amorphous semiconductor alloys and devices using microwave energy
Grant 4,517,223 - Ovshinsky , et al. May 14, 1
1985-05-14
Method of making amorphous semiconductor alloys and devices using microwave energy
Grant 4,504,518 - Ovshinsky , et al. March 12, 1
1985-03-12
Multiple chamber deposition and isolation system and method
Grant 4,438,723 - Cannella , et al. March 27, 1
1984-03-27

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