loadpatents
Patent applications and USPTO patent grants for Huang; Yao-Tsung.The latest application filed is for "manufacturing method of semiconductor chip".
Patent | Date |
---|---|
Manufacturing method of semiconductor chip Grant 11,450,756 - Wan , et al. September 20, 2 | 2022-09-20 |
Manufacturing Method Of Semiconductor Chip App 20200388700 - WAN; Cheng-Tien ;   et al. | 2020-12-10 |
Semiconductor chip and manufacturing method thereof Grant 10,790,380 - Wan , et al. September 29, 2 | 2020-09-29 |
Semiconductor Chip And Manufacturing Method Thereof App 20190123176 - WAN; Cheng-Tien ;   et al. | 2019-04-25 |
Silicon germanium source/drain regions Grant 9,887,290 - Tsai , et al. February 6, 2 | 2018-02-06 |
Device having source/drain regions regrown from un-relaxed silicon layer Grant 9,508,849 - Wann , et al. November 29, 2 | 2016-11-29 |
Integrated Circuit Device And Method For Forming The Same App 20160197071 - YEH; Chao-Yang ;   et al. | 2016-07-07 |
In-Situ Doping of Arsenic for Source and Drain Epitaxy App 20150137198 - Tsai; Ji-Yin ;   et al. | 2015-05-21 |
Method of fabricating hybrid orientation substrate and structure of the same Grant 9,034,102 - Huang , et al. May 19, 2 | 2015-05-19 |
In-situ doping of arsenic for source and drain epitaxy Grant 8,962,400 - Tsai , et al. February 24, 2 | 2015-02-24 |
Semiconductor Devices and Methods of Manufacture Thereof App 20140312431 - Tsai; Ji-Yin ;   et al. | 2014-10-23 |
Semiconductor devices and methods of manufacture thereof Grant 8,866,188 - Tsai , et al. October 21, 2 | 2014-10-21 |
Semiconductor devices and methods of manufacture thereof Grant 8,785,285 - Tsai , et al. July 22, 2 | 2014-07-22 |
Device Having Source/Drain Regions Regrown from Un-Relaxed Silicon Layer App 20140138742 - Wann; Clement Hsingjen ;   et al. | 2014-05-22 |
FinFET design and method of fabricating same Grant 8,618,556 - Wu , et al. December 31, 2 | 2013-12-31 |
FinFET design and method of fabricating same Grant 08618556 - | 2013-12-31 |
Re-growing source/drain regions from un-relaxed silicon layer Grant 8,609,518 - Wann , et al. December 17, 2 | 2013-12-17 |
Bag App 20130279828 - HUANG; Yao-Tsung | 2013-10-24 |
Semiconductor Devices and Methods of Manufacture Thereof App 20130234203 - Tsai; Ji-Yin ;   et al. | 2013-09-12 |
Re-growing Source/Drain Regions from Un-Relaxed Silicon Layer App 20130020612 - Wann; Clement Hsingjen ;   et al. | 2013-01-24 |
In-Situ Doping of Arsenic for Source and Drain Epitaxy App 20130011983 - Tsai; Ji-Yin ;   et al. | 2013-01-10 |
Finfet Design And Method Of Fabricating Same App 20130001591 - Wu; Cheng-Hsien ;   et al. | 2013-01-03 |
Method for forming semiconductor device with gates of different materials Grant 7,759,202 - Lin , et al. July 20, 2 | 2010-07-20 |
Method for fabricating a hybrid orientation substrate Grant 7,682,932 - Lin , et al. March 23, 2 | 2010-03-23 |
Method for forming fully silicided gate electrode in a semiconductor device Grant 7,659,189 - Lin , et al. February 9, 2 | 2010-02-09 |
Method for fabricating a hybrid orientation substrate Grant 7,608,522 - Lin , et al. October 27, 2 | 2009-10-27 |
Semiconductor Device And Method Of Forming The Same App 20080318371 - Lin; Chien-Ting ;   et al. | 2008-12-25 |
Semiconductor Device And Method Of Forming The Same App 20080272435 - Lin; Chien-Ting ;   et al. | 2008-11-06 |
Method For Fabricating A Hybrid Orientation Substrate App 20080254604 - Lin; Chien-Ting ;   et al. | 2008-10-16 |
Method Of Fabricating Hybrid Orientation Substrate And Structure Of The Same App 20080237809 - Huang; Yao-Tsung ;   et al. | 2008-10-02 |
Method For Forming Fully Silicided Gate Electrode In A Semiconductor Device App 20080224239 - Lin; Chien-Ting ;   et al. | 2008-09-18 |
Method For Fabricating A Hybrid Orientation Substrate App 20080220595 - Lin; Chien-Ting ;   et al. | 2008-09-11 |
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