Huang; Sheng-Yi
Patent Applications and Registrations
Patent applications and USPTO patent grants for Huang; Sheng-Yi.The latest application filed is for "semiconductor structure for fully depleted silicon-on-insulator (fdsoi) transistor".
- Huang; Sheng-Yi - Hsinchu TW
- Huang; Sheng-Yi - Hsinchu City TW
- Huang; Sheng-Yi - Hsinchu County TW
| Patent | Date |
|---|---|
| Semiconductor structure for fully depleted silicon-on-insulator (FDSOI) transistor Grant 11,107,918 - Ko , et al. August 31, 2 | 2021-08-31 |
| Semiconductor Structure For Fully Depleted Silicon-on-insulator (fdsoi) Transistor App 20200365731 - Ko; Jen-Wei ; et al. | 2020-11-19 |
| Radio frequency device and method for fabricating the same Grant 8,507,987 - Huang , et al. August 13, 2 | 2013-08-13 |
| Die seal ring Grant 8,357,988 - Hung , et al. January 22, 2 | 2013-01-22 |
| Radio Frequency Device and Method for Fabricating the Same App 20110068415 - Huang; Sheng-Yi ; et al. | 2011-03-24 |
| Die Seal Ring App 20100200947 - Hung; Cheng-Chou ; et al. | 2010-08-12 |
| Pseudo-drain Mos Transistor App 20100109080 - Huang; Sheng-Yi ; et al. | 2010-05-06 |
| High-voltage Radio-frequency Power Device App 20080251863 - Huang; Sheng-Yi ; et al. | 2008-10-16 |
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