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name:-0.0085229873657227
name:-0.0094709396362305
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Huang; Shan-Shi Patent Filings

Huang; Shan-Shi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Huang; Shan-Shi.The latest application filed is for "semiconductor structure".

Company Profile
0.11.9
  • Huang; Shan-Shi - Hsinchu City TW
  • Huang; Shan-Shi - Hsinchu TW
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Semiconductor Structure
App 20220208760 - Hsiung; Chang-Po ;   et al.
2022-06-30
Semiconductor Device And Manufacturing Method Thereof
App 20220085210 - Hsiung; Chang-Po ;   et al.
2022-03-17
Method for forming gate structures in different operation voltages
Grant 9,929,056 - Tsai , et al. March 27, 2
2018-03-27
Structure of ESD protection circuits on BEOL layer
Grant 9,397,084 - Li , et al. July 19, 2
2016-07-19
Method of fabricating high voltage metal-oxide-semiconductor transistor device
Grant 9,034,713 - Wang , et al. May 19, 2
2015-05-19
Method Of Fabricating High Voltage Metal-oxide-semiconductor Transistor Device
App 20150079754 - Wang; Chih-Chung ;   et al.
2015-03-19
High voltage metal-oxide-semiconductor transistor device and method of fabricating the same
Grant 8,921,937 - Wang , et al. December 30, 2
2014-12-30
Semiconductor device
Grant 8,698,247 - Wang , et al. April 15, 2
2014-04-15
High Voltage Mosfet Device
App 20130187225 - WANG; Chih-Chung ;   et al.
2013-07-25
High voltage MOSFET device
Grant 8,492,835 - Wang , et al. July 23, 2
2013-07-23
High-voltage semiconductor device with electrostatic discharge protection
Grant 8,436,418 - Wang , et al. May 7, 2
2013-05-07
High Voltage Metal-oxide-semiconductor Transistor Device And Method Of Fabricating The Same
App 20130049114 - Wang; Chih-Chung ;   et al.
2013-02-28
High-voltage Semiconductor Device
App 20120319189 - Wang; Chih-Chung ;   et al.
2012-12-20
Semiconductor Device
App 20120313175 - Wang; Chih-Chung ;   et al.
2012-12-13

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