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Patent applications and USPTO patent grants for Huang; Ping Wei.The latest application filed is for "fin structure for fin field effect transistor and method for fabrication the same".
Patent | Date |
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Fin Structure For Fin Field Effect Transistor And Method For Fabrication The Same App 20220052199 - Feng; Hao Che ;   et al. | 2022-02-17 |
Semiconductor Structure Having Metal Gate And Forming Method Thereof App 20190371916 - Lin; Jing-Yi ;   et al. | 2019-12-05 |
Method for filling gaps of semiconductor device and semiconductor device formed by the same Grant 9,847,247 - Huang , et al. December 19, 2 | 2017-12-19 |
FinFET device on silicon-on-insulator and method of forming the same Grant 9,793,174 - Huang , et al. October 17, 2 | 2017-10-17 |
Method For Filling Gaps Of Semiconductor Device And Semiconductor Device Formed By The Same App 20170243780 - Huang; Ping-Wei ;   et al. | 2017-08-24 |
Method for filling gaps of semiconductor device and semiconductor device formed by the same Grant 9,685,319 - Huang , et al. June 20, 2 | 2017-06-20 |
Method For Filling Gaps Of Semiconductor Device And Semiconductor Device Formed By The Same App 20160365245 - Huang; Ping-Wei ;   et al. | 2016-12-15 |
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