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Patent applications and USPTO patent grants for Huang; Hung-Shu.The latest application filed is for "passivation structure with increased thickness for metal pads".
Patent | Date |
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Device with a recessed gate electrode that has high thickness uniformity Grant 11,445,104 - Huang , et al. September 13, 2 | 2022-09-13 |
Passivation Structure With Increased Thickness for Metal Pads App 20220013482 - Huang; Hung-Shu ;   et al. | 2022-01-13 |
Flash Memory Structure With Enhanced Floating Gate App 20210384211 - Huang; Hung-Shu ;   et al. | 2021-12-09 |
Double channel memory device Grant 11,158,648 - Huang , et al. October 26, 2 | 2021-10-26 |
Flash memory structure with enhanced floating gate Grant 11,107,825 - Huang , et al. August 31, 2 | 2021-08-31 |
Pad Structure And Manufacturing Method Thereof In Semiconductor Device App 20210050314 - HUANG; HUNG-SHU ;   et al. | 2021-02-18 |
Pad structure and manufacturing method thereof in semiconductor device Grant 10,840,198 - Huang , et al. November 17, 2 | 2020-11-17 |
Flash Memory Structure With Enhanced Floating Gate App 20200321348 - Huang; Hung-Shu ;   et al. | 2020-10-08 |
Double Channel Memory Device App 20200295015 - HUANG; Hung-Shu ;   et al. | 2020-09-17 |
Flash memory structure with enhanced floating gate Grant 10,734,398 - Huang , et al. | 2020-08-04 |
Device With A Recessed Gate Electrode That Has High Thickness Uniformity App 20200221015 - Huang; Hung-Shu ;   et al. | 2020-07-09 |
Pad Structure And Manufacturing Method Thereof In Semiconductor Device App 20200091096 - Huang; Hung-shu ;   et al. | 2020-03-19 |
Flash Memory Structure With Enhanced Floating Gate App 20200075614 - Huang; Hung-Shu ;   et al. | 2020-03-05 |
Pad structure and manufacturing method thereof in semiconductor device Grant 10,510,696 - Huang , et al. Dec | 2019-12-17 |
Pad Structure And Manufacturing Method Thereof In Semiconductor Device App 20190164917 - HUANG; HUNG-SHU ;   et al. | 2019-05-30 |
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