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Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor material Grant 11,038,027 - Karda , et al. June 15, 2 | 2021-06-15 |
Methods of forming integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material Grant 11,024,643 - Huang , et al. June 1, 2 | 2021-06-01 |
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Integrated Structures Comprising Vertical Channel Material and Having Conductively-Doped Semiconductor Material Directly Against App 20190371816 - Huang; Guangyu ;   et al. | 2019-12-05 |
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Multi-gate String Drivers Having Shared Pillar Structure App 20190206889 - Goda; Akira ;   et al. | 2019-07-04 |
Flash memory devices incorporating a polydielectric layer Grant 10,290,642 - Liu , et al. | 2019-05-14 |
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Memory Devices Including Vertical Memory Cells And Related Methods App 20190067326 - Huang; Guangyu ;   et al. | 2019-02-28 |
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Integrated Structures Comprising Vertical Channel Material and Having Conductively-Doped Semiconductor Material Directly Against Lower Sidewalls of the Channel Material, and Methods of Forming Integrated Structures App 20180226427 - Huang; Guangyu ;   et al. | 2018-08-09 |
Methods of forming integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material Grant 9,941,298 - Huang , et al. April 10, 2 | 2018-04-10 |
Integrated Structures Containing Vertically-Stacked Memory Cells App 20170373081 - Liu; Haitao ;   et al. | 2017-12-28 |
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Integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material Grant 9,741,737 - Huang , et al. August 22, 2 | 2017-08-22 |
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