| Patent | Date |
|---|
Thin-film Transistors And Mim Capacitors In Exclusion Zones
App 20220310610 - SHARMA; Abhishek A. ; et al. | 2022-09-29 |
Non-silicon N-type And P-type Stacked Transistors For Integrated Circuit Devices
App 20220310605 - Dewey; Gilbert ; et al. | 2022-09-29 |
Field effect transistors with wide bandgap materials
Grant 11,444,159 - Ma , et al. September 13, 2 | 2022-09-13 |
Transistors stacked on front-end p-type transistors
Grant 11,437,405 - Dewey , et al. September 6, 2 | 2022-09-06 |
Vertical Tunneling Field-effect Transistors
App 20220278227 - Huang; Cheng-Ying ; et al. | 2022-09-01 |
Group III-V semiconductor devices having dual workfunction gate electrodes
Grant 11,424,335 - Ma , et al. August 23, 2 | 2022-08-23 |
Gate-all-around Integrated Circuit Structures Having Depopulated Channel Structures Using Selective Bottom-up Approach
App 20220262796 - THOMAS; Nicole ; et al. | 2022-08-18 |
Leave-behind Protective Layer Having Secondary Purpose
App 20220246608 - LILAK; Aaron D. ; et al. | 2022-08-04 |
Tunneling field effect transistors
Grant 11,404,562 - Huang , et al. August 2, 2 | 2022-08-02 |
Heterogeneous Ge/III-V CMOS transistor structures
Grant 11,398,479 - Rachmady , et al. July 26, 2 | 2022-07-26 |
Stacked transistors with Si PMOS and high mobility thin film transistor NMOS
Grant 11,393,818 - Dewey , et al. July 19, 2 | 2022-07-19 |
Top Gate Recessed Channel Cmos Thin Film Transistor In The Back End Of Line And Methods Of Fabrication
App 20220223519 - Dewey; Gilbert ; et al. | 2022-07-14 |
Non-silicon N-Type and P-Type stacked transistors for integrated circuit devices
Grant 11,387,238 - Dewey , et al. July 12, 2 | 2022-07-12 |
Stacked transistor architecture including nanowire or nanoribbon thin film transistors
Grant 11,380,684 - Dewey , et al. July 5, 2 | 2022-07-05 |
Arrays Of Double-sided Dram Cells Including Capacitors On The Frontside And Backside Of A Stacked Transistor Structure
App 20220199624 - Huang; Cheng-Ying ; et al. | 2022-06-23 |
Stacked nanowire transistor structure with different channel geometries for stress
Grant 11,367,722 - Lilak , et al. June 21, 2 | 2022-06-21 |
Source/drain recess etch stop layers and bottom wide-gap cap for III-V MOSFETs
Grant 11,367,789 - Huang , et al. June 21, 2 | 2022-06-21 |
Non-planar semiconductor device including a replacement channel structure
Grant 11,355,621 - Dewey , et al. June 7, 2 | 2022-06-07 |
Gate-all-around integrated circuit structures having depopulated channel structures using selective bottom-up approach
Grant 11,348,919 - Thomas , et al. May 31, 2 | 2022-05-31 |
Leave-behind protective layer having secondary purpose
Grant 11,348,916 - Lilak , et al. May 31, 2 | 2022-05-31 |
Source to channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)
Grant 11,335,796 - Huang , et al. May 17, 2 | 2022-05-17 |
Vertical tunneling field-effect transistors
Grant 11,335,793 - Huang , et al. May 17, 2 | 2022-05-17 |
Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabrication
Grant 11,328,988 - Dewey , et al. May 10, 2 | 2022-05-10 |
Source-channel Junction For Iii-v Metal-oxide-semiconductor Field Effect Transistors (mosfets)
App 20220140076 - HUANG; Cheng-Ying ; et al. | 2022-05-05 |
Switching device having gate stack with low oxide growth
Grant 11,296,203 - Rachmady , et al. April 5, 2 | 2022-04-05 |
Forksheet Transistors With Dielectric Or Conductive Spine
App 20220093647 - SUNG; Seung Hoon ; et al. | 2022-03-24 |
Three-dimensional Integrated Circuits (3dics) Including Bottom Gate Mos Transistors With Monocrystalline Channel Material
App 20220093586 - Huang; Cheng-Ying ; et al. | 2022-03-24 |
Transistor structure with indium phosphide channel
Grant 11,276,694 - Rachmady , et al. March 15, 2 | 2022-03-15 |
Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)
Grant 11,257,904 - Huang , et al. February 22, 2 | 2022-02-22 |
Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel material
Grant 11,244,943 - Huang , et al. February 8, 2 | 2022-02-08 |
Transistor With Isolation Below Source And Drain
App 20220028972 - RACHMADY; Willy ; et al. | 2022-01-27 |
Gate-all-around Integrated Circuit Structures Having Depopulated Channel Structures Using Selective Bottom-up Approach
App 20210407997 - THOMAS; Nicole ; et al. | 2021-12-30 |
Stacked Forksheet Transistors
App 20210407999 - HUANG; Cheng-Ying ; et al. | 2021-12-30 |
Transistor structures having multiple threshold voltage channel materials
Grant 11,177,255 - Ma , et al. November 16, 2 | 2021-11-16 |
Transistor with isolation below source and drain
Grant 11,171,207 - Rachmady , et al. November 9, 2 | 2021-11-09 |
Three-dimensional integrated circuits (3DICs) including upper-level transistors with epitaxial source and drain material
Grant 11,164,785 - Agrawal , et al. November 2, 2 | 2021-11-02 |
Channel layer formed in an art trench
Grant 11,164,974 - Rachmady , et al. November 2, 2 | 2021-11-02 |
Group III-V semiconductor devices having asymmetric source and drain structures
Grant 11,164,747 - Ma , et al. November 2, 2 | 2021-11-02 |
Stacked transistor architecture having diverse fin geometry
Grant 11,075,198 - Lilak , et al. July 27, 2 | 2021-07-27 |
Three-dimensional Integrated Circuits (3dics) Including Upper-level Transistors With Epitaxial Source & Drain Material
App 20210202319 - Agrawal; Ashish ; et al. | 2021-07-01 |
Three-dimensional Integrated Circuits (3dics) Including Bottom Gate Mos Transistors With Monocrystalline Channel Material
App 20210202476 - Huang; Cheng-Ying ; et al. | 2021-07-01 |
Top Gate Recessed Channel Cmos Thin Film Transistor In The Back End Of Line And Methods Of Fabrication
App 20210202378 - Dewey; Gilbert ; et al. | 2021-07-01 |
Art trench spacers to enable fin release for non-lattice matched channels
Grant 11,049,773 - Dewey , et al. June 29, 2 | 2021-06-29 |
Stacked Transistors With Si Pmos And High Mobility Thin Film Transistor Nmos
App 20210091080 - DEWEY; Gilbert ; et al. | 2021-03-25 |
Switching Device Having Gate Stack With Low Oxide Growth
App 20210074828 - Rachmady; Willy ; et al. | 2021-03-11 |
Iii-v Source/drain In Top Nmos Transistors For Low Temperature Stacked Transistor Contacts
App 20210057413 - DEWEY; Gilbert ; et al. | 2021-02-25 |
Thin Film Transistor Structures With Regrown Source & Drain
App 20210036023 - Agrawal; Ashish ; et al. | 2021-02-04 |
Device isolation by fixed charge
Grant 10,892,335 - Ma , et al. January 12, 2 | 2021-01-12 |
Devices With Air Gapping Between Stacked Transistors And Process For Providing Such
App 20200411639 - MANNEBACH; Ehren ; et al. | 2020-12-31 |
Epitaxial Layer With Substantially Parallel Sides
App 20200411315 - HUANG; Cheng-Ying ; et al. | 2020-12-31 |
Stacked Trigate Transistors With Dielectric Isolation And Process For Forming Such
App 20200411511 - RACHMADY; Willy ; et al. | 2020-12-31 |
Stacked Source-drain-gate Connection And Process For Forming Such
App 20200411651 - MANNEBACH; Ehren ; et al. | 2020-12-31 |
Memory Devices With A Logic Region Between Memory Regions
App 20200411428 - Lilak; Aaron D. ; et al. | 2020-12-31 |
Sideways Vias In Isolation Areas To Contact Interior Layers In Stacked Devices
App 20200411430 - MANNEBACH; Ehren ; et al. | 2020-12-31 |
Forming An Oxide Volume Within A Fin
App 20200411365 - HUANG; Cheng-Ying ; et al. | 2020-12-31 |
Transistors with non-vertical gates
Grant 10,879,365 - Huang , et al. December 29, 2 | 2020-12-29 |
Stiff quantum layers to slow and or stop defect propagation
Grant 10,861,939 - Metz , et al. December 8, 2 | 2020-12-08 |
Supperlatice channel included in a trench
Grant 10,847,619 - Huang , et al. November 24, 2 | 2020-11-24 |
Vertical Tunneling Field-effect Transistors
App 20200335610 - Huang; Cheng-Ying ; et al. | 2020-10-22 |
Non-silicon N-type And P-type Stacked Transistors For Integrated Circuit Devices
App 20200335501 - Dewey; Gilbert ; et al. | 2020-10-22 |
Heterogeneous Ge/iii-v Cmos Transistor Structures
App 20200312846 - Rachmady; Willy ; et al. | 2020-10-01 |
Transistor Structures Including A Non-planar Body Having Variable And Complementary Semiconductor And Insulator Portions
App 20200312841 - RACHMADY; Willy ; et al. | 2020-10-01 |
Stacked Transistors With Dielectric Between Source/drain Materials Of Different Strata
App 20200294969 - Rachmady; Willy ; et al. | 2020-09-17 |
Stacked Transistors Having Device Strata With Different Channel Widths
App 20200295003 - Dewey; Gilbert W. ; et al. | 2020-09-17 |
Stacked Transistors With Different Crystal Orientations In Different Device Strata
App 20200295127 - Mannebach; Ehren ; et al. | 2020-09-17 |
Source To Channel Junction For Iii-v Metal-oxide-semiconductor Field Effect Transistors (mosfets)
App 20200287036 - HUANG; Cheng-Ying ; et al. | 2020-09-10 |
Transistors With High Density Channel Semiconductor Over Dielectric Material
App 20200287024 - Dewey; Gilbert ; et al. | 2020-09-10 |
Transistor Structures Having Multiple Threshold Voltage Channel Materials
App 20200279845 - Ma; Sean T. ; et al. | 2020-09-03 |
Transistor With Isolation Below Source And Drain
App 20200279916 - Rachmady; Willy ; et al. | 2020-09-03 |
Etchstop Regions In Fins Of Semiconductor Devices
App 20200279941 - HUANG; Cheng-Ying ; et al. | 2020-09-03 |
Stacked Transistors With Dielectric Between Channels Of Different Device Strata
App 20200266218 - Lilak; Aaron D. ; et al. | 2020-08-20 |
Vertical Diode In Stacked Transistor Architecture
App 20200258881 - A1 | 2020-08-13 |
High mobility asymmetric field effect transistors with a band-offset semiconductor drain spacer
Grant 10,734,511 - Huang , et al. | 2020-08-04 |
Stacked Transistor Architecture Having Diverse Fin Geometry
App 20200235092 - Lilak; Aaron D. ; et al. | 2020-07-23 |
Non-planar Semiconductor Device Including A Replacement Channel Structure
App 20200227539 - Dewey; Gilbert ; et al. | 2020-07-16 |
Group Iii-v Semiconductor Devices Having Dual Workfunction Gate Electrodes
App 20200227533 - MA; Sean T. ; et al. | 2020-07-16 |
Improved Channel Layer Formed In An Art Trench
App 20200220017 - Rachmady; Willy ; et al. | 2020-07-09 |
Gate-all-around Integrated Circuit Structures Having Depopulated Channel Structures Using Multiple Bottom-up Oxidation Approache
App 20200219970 - Mannebach; Ehren ; et al. | 2020-07-09 |
Gate-all-around Integrated Circuit Structures Having Depopulated Channel Structures Using Bottom-up Oxidation Approach
App 20200219979 - RACHMADY; Willy ; et al. | 2020-07-09 |
Self-aligned Stacked Ge/si Cmos Transistor Structure
App 20200212038 - RACHMADY; Willy ; et al. | 2020-07-02 |
Three Dimensional Integrated Circuits With Stacked Transistors
App 20200211905 - HUANG; Cheng-Ying ; et al. | 2020-07-02 |
Group Iii-v Semiconductor Devices Having Asymmetric Source And Drain Structures
App 20200203169 - MA; Sean T. ; et al. | 2020-06-25 |
Transistors On Heterogeneous Bonding Layers
App 20200194570 - Jun; Kimin ; et al. | 2020-06-18 |
Vertical Memory Cells
App 20200194435 - LILAK; Aaron ; et al. | 2020-06-18 |
Device Isolation By Fixed Charge
App 20200185501 - Ma; Sean T. ; et al. | 2020-06-11 |
Tunneling Field Effect Transistors
App 20200168724 - Huang; Cheng-Ying ; et al. | 2020-05-28 |
Reduced transistor resistance using doped layer
Grant 10,651,313 - Huang , et al. | 2020-05-12 |
Transistor With Wide Bandgap Channel And Narrow Bandgap Source/drain
App 20200144374 - MA; Sean T. ; et al. | 2020-05-07 |
Systems, methods and devices for isolation for subfin leakage
Grant 10,644,112 - Chu-Kung , et al. | 2020-05-05 |
Stacked Transistor Architecture Including Nanowire Or Nanoribbon Thin Film Transistors
App 20200105751 - Dewey; Gilbert ; et al. | 2020-04-02 |
Transistor Structure With Indium Phosphide Channel
App 20200098757 - Rachmady; Willy ; et al. | 2020-03-26 |
Vertically Stacked Cmos With Upfront M0 Interconnect
App 20200098921 - RACHMADY; Willy ; et al. | 2020-03-26 |
High Performance Semiconductor Oxide Material Channel Regions For Nmos
App 20200098753 - Dewey; Gilbert ; et al. | 2020-03-26 |
Ferroelectric Gate Stack For Band-to-band Tunneling Reduction
App 20200098925 - Dewey; Gilbert ; et al. | 2020-03-26 |
Stacked Nanowire Transistor Structure With Different Channel Geometries For Stress
App 20200098756 - Lilak; Aaron ; et al. | 2020-03-26 |
Field Effect Transistors With Wide Bandgap Materials
App 20200066843 - MA; Sean T. ; et al. | 2020-02-27 |
Subfin Leakage Suppression Using Fixed Charge
App 20200044059 - Ma; Sean T. ; et al. | 2020-02-06 |
Leave-behind Protective Layer Having Secondary Purpose
App 20200006330 - LILAK; AARON D. ; et al. | 2020-01-02 |
Transistors Stacked On Front-end P-type Transistors
App 20200006388 - DEWEY; Gilbert ; et al. | 2020-01-02 |
Interconnect Techniques For Electrically Connecting Source/drain Regions Of Stacked Transistors
App 20200006329 - LILAK; AARON D. ; et al. | 2020-01-02 |
Channel Layer Formation For Iii-v Metal-oxide-semiconductor Field Effect Transistors (mosfets)
App 20200006069 - DEWEY; Gilbert ; et al. | 2020-01-02 |
Transistors With Non-vertical Gates
App 20200006510 - Huang; Cheng-Ying ; et al. | 2020-01-02 |
Channel Layer Formation For Iii-v Metal-oxide-semiconductor Field Effect Transistors (mosfets)
App 20200006576 - MA; Sean ; et al. | 2020-01-02 |
Source-channel Junction For Iii-v Metal-oxide-semiconductor Field Effect Transistors (mosfets)
App 20200006480 - HUANG; Cheng-Ying ; et al. | 2020-01-02 |
Channel Layer For Iii-v Metal-oxide-semiconductor Field Effect Transistors (mosfets)
App 20200006523 - METZ; Matthew ; et al. | 2020-01-02 |
Dielectric Lining Layers For Semiconductor Devices
App 20200006501 - Rachmady; Willy ; et al. | 2020-01-02 |
Source/drain Recess Etch Stop Layers And Bottom Wide-gap Cap For Iii-v Mosfets
App 20190296145 - HUANG; Cheng-Ying ; et al. | 2019-09-26 |
Art Trench Spacers To Enable Fin Release For Non-lattice Matched Channels
App 20190267289 - DEWEY; Gilbert ; et al. | 2019-08-29 |
Reduced Transistor Resistance Using Doped Layer
App 20190214500 - Huang; Cheng-Ying ; et al. | 2019-07-11 |
Stacked Transistors With Different Gate Lengths In Different Device Strata
App 20190196830 - Lilak; Aaron D. ; et al. | 2019-06-27 |
Stiff Quantum Layers To Slow And Or Stop Defect Propagation
App 20190189753 - Metz; Matthew ; et al. | 2019-06-20 |
Systems, Methods And Devices For Isolation For Subfin Leakage
App 20190189749 - Chu-Kung; Benjamin ; et al. | 2019-06-20 |
Supperlatice Channel Included In A Trench
App 20190172911 - Huang; Cheng-Ying ; et al. | 2019-06-06 |
High Mobility Asymmetric Field Effect Transistors With A Band-offset Semiconductor Drain Spacer
App 20190035921 - Huang; Cheng-Ying ; et al. | 2019-01-31 |
Device having source/drain regions regrown from un-relaxed silicon layer
Grant 9,508,849 - Wann , et al. November 29, 2 | 2016-11-29 |
Device Having Source/Drain Regions Regrown from Un-Relaxed Silicon Layer
App 20140138742 - Wann; Clement Hsingjen ; et al. | 2014-05-22 |
Re-growing source/drain regions from un-relaxed silicon layer
Grant 8,609,518 - Wann , et al. December 17, 2 | 2013-12-17 |
Re-growing Source/Drain Regions from Un-Relaxed Silicon Layer
App 20130020612 - Wann; Clement Hsingjen ; et al. | 2013-01-24 |
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