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name:-0.0039780139923096
name:-0.0028090476989746
Hu; Yong-Zhong Patent Filings

Hu; Yong-Zhong

Patent Applications and Registrations

Patent applications and USPTO patent grants for Hu; Yong-Zhong.The latest application filed is for "switch capable of decreasing parasitic inductance".

Company Profile
2.3.10
  • Hu; Yong-Zhong - Hsinchu TW
  • Hu; Yong-Zhong - Cupertino CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
High Voltage Device And Manufacturing Method Thereof
App 20220223464 - Yu; Kun-Huang ;   et al.
2022-07-14
Switch Capable Of Decreasing Parasitic Inductance
App 20220224325 - Yu; Kun-Huang ;   et al.
2022-07-14
Chip Packaging Structure
App 20220208628 - Lin; Shih-Chieh ;   et al.
2022-06-30
Chip Packaging Method And Chip Package Unit
App 20220181238 - Yen; Hao-Lin ;   et al.
2022-06-09
Chip Packaging Method And Chip Package Unit
App 20220181237 - Yen; Hao-Lin ;   et al.
2022-06-09
Chip Packaging Method And Chip Package Unit
App 20220157622 - Huang; Heng-Chi ;   et al.
2022-05-19
Power semiconductor devices
Grant 11,183,495 - Lee , et al. November 23, 2
2021-11-23
Power Semiconductor Devices
App 20190348412 - LEE; Sun-hak ;   et al.
2019-11-14
Power semiconductor devices
Grant 10,366,981 - Lee , et al. July 30, 2
2019-07-30
Power Semiconductor Devices
App 20160071837 - LEE; Sun-hak ;   et al.
2016-03-10
Method to manufacture split gate with high density plasma oxide layer as inter-polysilicon insulation layer
Grant 8,053,315 - Tai , et al. November 8, 2
2011-11-08
Method to manufacture split gate with high density plasma oxide layer as inter-polysilicon insulation layer
App 20100099230 - Tai; Sung-Shan ;   et al.
2010-04-22
Split gate formation with high density plasma (HDP) oxide layer as inter-polysilicon insulation layer
App 20080150013 - Tai; Sung-Shan ;   et al.
2008-06-26

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