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Patent applications and USPTO patent grants for Hu; Xuhong.The latest application filed is for "light emitting device substrate with inclined sidewalls".
Patent | Date |
---|---|
Light emitting device substrate with inclined sidewalls Grant 10,096,742 - Shatalov , et al. October 9, 2 | 2018-10-09 |
Light emitting device substrate with inclined sidewalls Grant 9,595,636 - Shatalov , et al. March 14, 2 | 2017-03-14 |
Chromium/titanium/aluminum-based semiconductor device contact fabrication Grant 9,514,947 - Gaska , et al. December 6, 2 | 2016-12-06 |
Light Emitting Device Substrate with Inclined Sidewalls App 20160149099 - Shatalov; Maxim S. ;   et al. | 2016-05-26 |
Chromium/Titanium/Aluminum-based Semiconductor Device Contact App 20150287602 - Gaska; Remigijus ;   et al. | 2015-10-08 |
Methods of fabricating a chromium/titanium/aluminum-based semiconductor device contact Grant 9,064,845 - Gaska , et al. June 23, 2 | 2015-06-23 |
Chromium/Titanium/Aluminum-based Semiconductor Device Contact App 20140308766 - Gaska; Remigijus ;   et al. | 2014-10-16 |
Chromium/Titanium/Aluminum-based semiconductor device contact Grant 8,766,448 - Gaska , et al. July 1, 2 | 2014-07-01 |
Light Emitting Device Substrate with Inclined Sidewalls App 20130260490 - Shatalov; Maxim S. ;   et al. | 2013-10-03 |
Chromium/titanium/aluminum-based Semiconductor Device Contact App 20080315419 - Gaska; Remigijus ;   et al. | 2008-12-25 |
Etching a nitride-based heterostructure Grant 7,429,534 - Gaska , et al. September 30, 2 | 2008-09-30 |
Etching a nitride-based heterostructure App 20060186422 - Gaska; Remigijus ;   et al. | 2006-08-24 |
Semiconductor structure having a textured nitride-based layer Grant 6,903,385 - Gaska , et al. June 7, 2 | 2005-06-07 |
Semiconductor structure having a textured nitride-based layer App 20040070003 - Gaska, Remigijus ;   et al. | 2004-04-15 |
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