| Patent | Date |
|---|
Low Ra Narrow Base Modified Double Magnetic Tunnel Junction Structure
App 20220302368 - Worledge; Daniel ; et al. | 2022-09-22 |
Amorphous Spin Diffusion Layer For Modified Double Magnetic Tunnel Junction Structure
App 20220301612 - Worledge; Daniel ; et al. | 2022-09-22 |
Planar solenoid inductors with antiferromagnetic pinned cores
Grant 11,342,115 - Hu , et al. May 24, 2 | 2022-05-24 |
Multilayered Magnetic Free Layer Structure For Spin-transfer Torque (stt) Mram
App 20220123049 - Worledge; Daniel ; et al. | 2022-04-21 |
STT MRAM matertails with heavy metal insertion
Grant 11,302,863 - Hu , et al. April 12, 2 | 2022-04-12 |
Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAM
Grant 11,264,559 - Worledge , et al. March 1, 2 | 2022-03-01 |
Method for forming a planar solenoid inductor
Grant 11,222,746 - Hu , et al. January 11, 2 | 2022-01-11 |
Thin reference layer for STT MRAM
Grant 11,223,010 - Hu , et al. January 11, 2 | 2022-01-11 |
Stt Mram Materials With Heavy Metal Insertion
App 20210257540 - Hu; Guohan ; et al. | 2021-08-19 |
Multilayered Magnetic Free Layer Structure Containing An Ordered Magnetic Alloy First Magnetic Free Layer For Spin-transfer Torque (stt) Mram
App 20210118949 - Worledge; Daniel ; et al. | 2021-04-22 |
Multilayered magnetic free layer structure containing an ordered magnetic alloy first magnetic free layer for spin-transfer torque (STT) MRAM
Grant 10,916,581 - Worledge , et al. February 9, 2 | 2021-02-09 |
Low magnetic moment materials for spin transfer torque magnetoresistive random access memory devices
Grant 10,833,253 - Hu November 10, 2 | 2020-11-10 |
Boron segregation in magnetic tunnel junctions
Grant 10,804,458 - Hu , et al. October 13, 2 | 2020-10-13 |
Mtj Pillar Having Temperature-independent Delta
App 20200259071 - A1 | 2020-08-13 |
Multilayered Magnetic Free Layer Structure Containing An Ordered Magnetic Alloy First Magnetic Free Layer For Spin-transfer Torq
App 20200251525 - Kind Code | 2020-08-06 |
Multilayered Magnetic Free Layer Structure For Spin-transfer Torque (stt) Mram
App 20200243749 - Worledge; Daniel ; et al. | 2020-07-30 |
Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAM
Grant 10,686,123 - Hu , et al. | 2020-06-16 |
Multilayered Magnetic Free Layer Structure For Spin-transfer Torque (stt) Mram
App 20200152699 - Worledge; Daniel ; et al. | 2020-05-14 |
Method for forming a planar, closed loop magnetic structure
Grant 10,600,566 - Hu , et al. | 2020-03-24 |
In-situ Annealing And Etch Back Steps To Improve Exchange Stiffness In Cobalt Iron Boride Based Perpendicular Magnetic Anisotrop
App 20200083438 - Brown; Stephen L. ; et al. | 2020-03-12 |
Magnetic domain wall shift register memory devices with high magnetoresistance ratio structures
Grant 10,580,971 - Hu , et al. | 2020-03-03 |
Simplified Double Magnetic Tunnel Junctions
App 20200066791 - Hu; Guohan ; et al. | 2020-02-27 |
Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAM
App 20200058845 - Hu; Guohan ; et al. | 2020-02-20 |
Planar Solenoid Inductors With Antiferromagnetic Pinned Cores
App 20200058440 - Hu; Guohan ; et al. | 2020-02-20 |
In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers
Grant 10,553,781 - Brown , et al. Fe | 2020-02-04 |
Planar Solenoid Inductors With Antiferromagnetic Pinned Cores
App 20190392988 - Hu; Guohan ; et al. | 2019-12-26 |
Magnetic exchange coupled MTJ free layer having low switching current and high data retention
Grant 10,510,390 - Hu , et al. Dec | 2019-12-17 |
Magnetic exchange coupled MTJ free layer having low switching current and high data retention
Grant 10,510,391 - Hu , et al. Dec | 2019-12-17 |
Simplified double magnetic tunnel junctions
Grant 10,468,455 - Hu , et al. No | 2019-11-05 |
Magnetic exchange coupled MTJ free layer with double tunnel barriers having low switching current and high data retention
Grant 10,453,509 - Hu , et al. Oc | 2019-10-22 |
Thin Reference Layer For Stt Mram
App 20190288186 - Hu; Guohan ; et al. | 2019-09-19 |
Magnetic Exchange Coupled MTJ Free Layer Having Low Switching Current And High Data Retention
App 20190244647 - Hu; Guohan ; et al. | 2019-08-08 |
In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers
Grant 10,374,145 - Brown , et al. | 2019-08-06 |
Thin reference layer for STT MRAM
Grant 10,361,361 - Hu , et al. | 2019-07-23 |
Perpendicular magnetic anisotropy free layers with iron insertion and oxide interfaces for spin transfer torque magnetic random access memory
Grant 10,347,827 - Hu July 9, 2 | 2019-07-09 |
Magnetic exchange coupled MTJ free layer with double tunnel barriers having low switching current and high data retention
Grant 10,332,576 - Hu , et al. | 2019-06-25 |
Growth of metal on a dielectric
Grant 10,294,561 - Hu , et al. | 2019-05-21 |
Boron Segregation In Magnetic Tunnel Junctions
App 20190140165 - Hu; Guohan ; et al. | 2019-05-09 |
Fabricating a cap layer for a magnetic random access memory (MRAM) device
Grant 10,256,399 - Hu , et al. | 2019-04-09 |
Boron segregation in magnetic tunnel junctions
Grant 10,230,043 - Hu , et al. | 2019-03-12 |
Magnetic Exchange Coupled Mtj Free Layer Having Low Switching Current And High Data Retention
App 20180358068 - Hu; Guohan ; et al. | 2018-12-13 |
Magnetic Exchange Coupled Mtj Free Layer Having Low Switching Current And High Data Retention
App 20180358066 - Hu; Guohan ; et al. | 2018-12-13 |
Magnetic Exchange Coupled Mtj Free Layer With Double Tunnel Barriers Having Low Switching Current And High Data Retention
App 20180358067 - Hu; Guohan ; et al. | 2018-12-13 |
Magnetic Exchange Coupled Mtj Free Layer With Double Tunnel Barriers Having Low Switching Current And High Data Retention
App 20180358065 - Hu; Guohan ; et al. | 2018-12-13 |
Boron Segregation In Magnetic Tunnel Junctions
App 20180277748 - Hu; Guohan ; et al. | 2018-09-27 |
Double magnetic tunnel junction with dynamic reference layer
Grant 10,079,337 - Gottwald , et al. September 18, 2 | 2018-09-18 |
Perpendicular Magnetic Anisotropy Free Layers With Iron Insertion And Oxide Interfaces For Spin Transfer Torque Magnetic Random Access Memory
App 20180226576 - Hu; Guohan | 2018-08-09 |
Growth Of Metal On A Dielectric
App 20180195168 - Hu; Guohan ; et al. | 2018-07-12 |
Double Magnetic Tunnel Junction With Dynamic Reference Layer
App 20180198058 - Gottwald; Matthias G. ; et al. | 2018-07-12 |
Perpendicular magnetic anisotropy BCC multilayers
Grant 10,003,016 - Hu , et al. June 19, 2 | 2018-06-19 |
Magnetic Domain Wall Shift Register Memory Devices With High Magnetoresistance Ratio Structures
App 20180166626 - Hu; Guohan ; et al. | 2018-06-14 |
Perpendicular magnetic anisotrophy free layers with iron insertion and oxide interfaces for spin transfer torque magnetic random access memory
Grant 9,978,935 - Hu May 22, 2 | 2018-05-22 |
Growth of metal on a dielectric
Grant 9,963,780 - Hu , et al. May 8, 2 | 2018-05-08 |
In-situ annealing to improve the tunneling magneto-resistance of magnetic tunnel junctions
Grant 9,960,348 - Hu , et al. May 1, 2 | 2018-05-01 |
Planar Solenoid Inductors With Antiferromagnetic Pinned Cores
App 20180108468 - Hu; Guohan ; et al. | 2018-04-19 |
Magnetic domain wall shift register memory devices with high magnetoresistance ratio structures
Grant 9,941,465 - Hu , et al. April 10, 2 | 2018-04-10 |
Light element doped low magnetic moment material spin torque transfer MRAM
Grant 9,893,273 - Hu , et al. February 13, 2 | 2018-02-13 |
Current constriction for spin torque MRAM
Grant 9,892,840 - Hu , et al. February 13, 2 | 2018-02-13 |
In-situ annealing to improve the tunneling magneto-resistance of magnetic tunnel junctions
Grant 9,853,208 - Hu , et al. December 26, 2 | 2017-12-26 |
Fabricating A Cap Layer For A Magnetic Random Access Memory (mram) Device
App 20170338404 - Hu; Guohan ; et al. | 2017-11-23 |
Noble Metal Cap Layer For A Metal Oxide Cap Of A Magnetic Tunnel Junction Structure
App 20170338402 - Hu; Guohan ; et al. | 2017-11-23 |
High temperature endurable MTJ stack
Grant 9,799,823 - Hu , et al. October 24, 2 | 2017-10-24 |
Current constriction for spin torque MRAM
Grant 9,799,826 - Hu , et al. October 24, 2 | 2017-10-24 |
Light Element Doped Low Magnetic Moment Material Spin Torque Transfer Mram
App 20170294575 - Hu; Guohan ; et al. | 2017-10-12 |
High Temperature Endurable Mtj Stack
App 20170294570 - HU; GUOHAN ; et al. | 2017-10-12 |
Thin Reference Layer For Stt Mram
App 20170294573 - Hu; Guohan ; et al. | 2017-10-12 |
Simplified Double Magnetic Tunnel Junctions
App 20170294482 - Hu; Guohan ; et al. | 2017-10-12 |
Current Constriction For Spin Torque Mram
App 20170287613 - Hu; Guohan ; et al. | 2017-10-05 |
Perpendicular magnetic anisotropy BCC multilayers
Grant 9,773,971 - Hu , et al. September 26, 2 | 2017-09-26 |
Low Magnetic Moment Materials for Spin Transfer Torque Magnetoresistive Random Access Memory Devices
App 20170229642 - Hu; Guohan | 2017-08-10 |
Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multilayer
Grant 9,715,917 - Hu , et al. July 25, 2 | 2017-07-25 |
In-situ Annealing And Etch Back Steps To Improve Exchange Stiffness In Cobalt Iron Boride Based Perpendicular Magnetic Anisotropy Free Layers
App 20170194556 - Brown; Stephen L. ; et al. | 2017-07-06 |
Perpendicular Magnetic Anisotropy Bcc Multilayers
App 20170170391 - Hu; Guohan ; et al. | 2017-06-15 |
Growth Of Metal On A Dielectric
App 20170159172 - Hu; Guohan ; et al. | 2017-06-08 |
Current constriction for spin torque MRAM
Grant 9,660,180 - Hu , et al. May 23, 2 | 2017-05-23 |
Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multilayer
Grant 9,647,204 - Hu , et al. May 9, 2 | 2017-05-09 |
Spin Torque Mram Based On Co, Ir Synthetic Antiferromagnetic Multilayer
App 20170110655 - Hu; Guohan ; et al. | 2017-04-20 |
In-situ Annealing And Etch Back Steps To Improve Exchange Stiffness In Cobalt Iron Boride Based Perpendicular Magnetic Anisotropy Free Layers
App 20170110506 - Brown; Stephen L. ; et al. | 2017-04-20 |
Perpendicular magnetic anisotropy BCC multilayers
Grant 9,620,708 - Hu , et al. April 11, 2 | 2017-04-11 |
Perpendicular Magnetic Anisotropy Free Layers With Iron Insertion And Oxide Interfaces For Spin Transfer Torque Magnetic Random Access Memory
App 20170084830 - Hu; Guohan | 2017-03-23 |
Current Constriction For Spin Torque Mram
App 20170054072 - Hu; Guohan ; et al. | 2017-02-23 |
Double synthetic antiferromagnet using rare earth metals and transition metals
Grant 9,564,580 - Hu , et al. February 7, 2 | 2017-02-07 |
Current Constriction For Spin Torque Mram
App 20170033280 - Hu; Guohan ; et al. | 2017-02-02 |
Perpendicular magnetic anisotropy free layers with iron insertion and oxide interfaces for spin transfer torque magnetic random access memory
Grant 9,537,090 - Hu January 3, 2 | 2017-01-03 |
Perpendicular Magnetic Anisotropy Free Layers With Iron Insertion And Oxide Interfaces For Spin Transfer Torque Magnetic Random Access Memory
App 20160380188 - Hu; Guohan | 2016-12-29 |
Perpendicular Magnetic Anisotropy Bcc Multilayers
App 20160372658 - Hu; Guohan ; et al. | 2016-12-22 |
Magnetic Domain Wall Shift Register Memory Devices With High Magnetoresistance Ratio Structures
App 20160343936 - Hu; Guohan ; et al. | 2016-11-24 |
Double synthetic antiferromagnet using rare earth metals and transition metals
Grant 9,502,641 - Hu , et al. November 22, 2 | 2016-11-22 |
Current constriction for spin torque MRAM
Grant 9,490,422 - Hu , et al. November 8, 2 | 2016-11-08 |
Perpendicular magnetic anisotropy BCC multilayers
Grant 9,484,531 - Hu , et al. November 1, 2 | 2016-11-01 |
In-situ annealing to improve the tunneling magneto-resistance of magnetic tunnel junctions
Grant 9,472,754 - Hu , et al. October 18, 2 | 2016-10-18 |
In-situ Annealing To Improve The Tunneling Magneto-resistance Of Magnetic Tunnel Junctions
App 20160301002 - Hu; Guohan ; et al. | 2016-10-13 |
Perpendicular Magnetic Anisotropy Bcc Multilayers
App 20160284986 - Hu; Guohan ; et al. | 2016-09-29 |
Perpendicular Magnetic Anisotropy Bcc Multilayers
App 20160284984 - Hu; Guohan ; et al. | 2016-09-29 |
Magnetic domain wall shift register memory devices with high magnetoresistance ratio structures
Grant 9,431,600 - Hu , et al. August 30, 2 | 2016-08-30 |
Perpendicular magnetic anisotropy BCC multilayers
Grant 9,391,266 - Hu , et al. July 12, 2 | 2016-07-12 |
Double Synthetic Antiferromagnet Using Rare Earth Metals And Transition Metals
App 20160190436 - Hu; Guohan ; et al. | 2016-06-30 |
Double Synthetic Antiferromagnet Using Rare Earth Metals And Transition Metals
App 20160190434 - Hu; Guohan ; et al. | 2016-06-30 |
In-situ Annealing To Improve The Tunneling Magneto-resistance Of Magnetic Tunnel Junctions
App 20160190437 - Hu; Guohan ; et al. | 2016-06-30 |
In-situ Annealing To Improve The Tunneling Magneto-resistance Of Magnetic Tunnel Junctions
App 20160190435 - Hu; Guohan ; et al. | 2016-06-30 |
Spin Torque MRAM Based on Co, Ir Synthetic Antiferromagnetic Multilayer
App 20160163966 - Hu; Guohan ; et al. | 2016-06-09 |
Magnetic Domain Wall Shift Register Memory Devices With High Magnetoresistance Ratio Structures
App 20160099404 - Hu; Guohan ; et al. | 2016-04-07 |
Perpendicular magnetization with oxide interface
Grant 9,093,103 - Hu , et al. July 28, 2 | 2015-07-28 |
Spin torque MRAM having perpendicular magnetization with oxide interface
Grant 9,087,543 - Hu , et al. July 21, 2 | 2015-07-21 |
Magnetic materials with enhanced perpendicular anisotropy energy density for STT-RAM
Grant 9,059,399 - Hu June 16, 2 | 2015-06-16 |
Free layers with iron interfacial layer and oxide cap for high perpendicular anisotropy energy density
Grant 9,059,389 - Hu June 16, 2 | 2015-06-16 |
Thermal spin torqure transfer magnetoresistive random access memory
Grant 8,947,915 - Worledge , et al. February 3, 2 | 2015-02-03 |
Thermal spin torque transfer magnetoresistive random access memory
Grant 8,947,917 - Worledge , et al. February 3, 2 | 2015-02-03 |
Free Layers With Iron Interfacial Layer And Oxide Cap For High Perpendicular Anisotropy Energy Density
App 20140361389 - Hu; Guohan | 2014-12-11 |
Magnetic Materials With Enhanced Perpendicular Anisotropy Energy Density For Stt-ram
App 20140363902 - Hu; Guohan | 2014-12-11 |
Magnetic Materials With Enhanced Perpendicular Anisotropy Energy Density For Stt-ram
App 20140361390 - Hu; Guohan | 2014-12-11 |
Perpendicular Magnetization With Oxide Interface
App 20140363701 - Hu; Guohan ; et al. | 2014-12-11 |
Perpendicular Magnetization With Oxide Interface
App 20140363569 - Hu; Guohan ; et al. | 2014-12-11 |
Free layers with iron interfacial layer and oxide cap for high perpendicular anisotropy energy density
Grant 8,871,530 - Hu October 28, 2 | 2014-10-28 |
Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory
Grant 8,866,207 - Hu , et al. October 21, 2 | 2014-10-21 |
Multi-bit spin-momentum-transfer magnetoresistence random access memory with single magnetic-tunnel-junction stack
Grant 8,767,446 - Hu , et al. July 1, 2 | 2014-07-01 |
Thermal Spin Torqure Transfer Magnetoresistive Random Access Memory
App 20140169080 - Worledge; Daniel C. ; et al. | 2014-06-19 |
Thermal Spin Torqure Transfer Magnetoresistive Random Access Memory
App 20140169082 - Worledge; Daniel C. ; et al. | 2014-06-19 |
Magnetic devices and structures
Grant 8,717,808 - Hu , et al. May 6, 2 | 2014-05-06 |
Magnetic tunnel junction with spacer layer for spin torque switched MRAM
Grant 8,492,859 - Hu July 23, 2 | 2013-07-23 |
Noncontact writing of nanometer scale magnetic bits using heat flow induced spin torque effect
Grant 8,456,894 - Abraham , et al. June 4, 2 | 2013-06-04 |
Multi-bit Spin-momentum-transfer Magnetoresistence Random Access Memory With Single Magnetic-tunnel-junction Stack
App 20130094282 - Hu; Guohan ; et al. | 2013-04-18 |
Spin-torque based memory device using a magnesium oxide tunnel barrier
Grant 8,406,040 - Worledge , et al. March 26, 2 | 2013-03-26 |
Magnetic Stacks With Perpendicular Magnetic Anisotropy For Spin Momentum Transfer Magnetoresistive Random Access Memory
App 20130005051 - Hu; Guohan ; et al. | 2013-01-03 |
Magnetic Tunnel Junction With Iron Dusting Layer Between Free Layer And Tunnel Barrier
App 20130005052 - Hu; Guohan ; et al. | 2013-01-03 |
Spin-torque Magnetoresistive Structures With Bilayer Free Layer
App 20120329177 - Abraham; David William ; et al. | 2012-12-27 |
Noncontact Writing Of Nanometer Scale Magnetic Bits Using Heat Flow Induced Spin Torque Effect
App 20120281460 - Abraham; David W. ; et al. | 2012-11-08 |
Magnetic Stacks With Perpendicular Magnetic Anisotropy For Spin Momentum Transfer Magnetoresistive Random Access Memory
App 20120267733 - Hu; Guohan ; et al. | 2012-10-25 |
Magnetic devices and structures
Grant 8,284,594 - Hu , et al. October 9, 2 | 2012-10-09 |
Optimized free layer for spin torque magnetic random access memory
Grant 8,283,741 - Hu , et al. October 9, 2 | 2012-10-09 |
Magnetic Devices And Structures
App 20120241885 - Hu; Guohan ; et al. | 2012-09-27 |
Magnetic Tunnel Junction With Iron Dusting Layer Between Free Layer And Tunnel Barrier
App 20120241878 - Hu; Guohan ; et al. | 2012-09-27 |
Magnetic Tunnel Junction With Spacer Layer For Spin Torque Switched Mram
App 20120205759 - Hu; Guohan | 2012-08-16 |
Optimized Free Layer For Spin Torque Magnetic Random Access Memory
App 20110169111 - Hu; Guohan ; et al. | 2011-07-14 |
Spin-torque Based Memory Device Using A Magnesium Oxide Tunnel Barrier
App 20110171493 - Worledge; Daniel C. ; et al. | 2011-07-14 |
Magnetic Devices and Structures
App 20110051503 - Hu; Guohan ; et al. | 2011-03-03 |
Spin-Torque Magnetoresistive Structures with Bilayer Free Layer
App 20100320550 - Abraham; David William ; et al. | 2010-12-23 |
Method and apparatus for reducing shield noise in magnetoresistive sensors
App 20070081277 - Folks; Liesl ; et al. | 2007-04-12 |
Patterned multilevel perpendicular magnetic recording media
Grant 6,947,235 - Albrecht , et al. September 20, 2 | 2005-09-20 |
Magnetic recording system with patterned multilevel perpendicular magnetic recording
Grant 6,906,879 - Albrecht , et al. June 14, 2 | 2005-06-14 |
Magnetic Recording System With Patterned Multilevel Perpendicular Magnetic Recording
App 20050122612 - Albrecht, Manfred ; et al. | 2005-06-09 |
Patterned multilevel perpendicular magnetic recording media
App 20050122609 - Albrecht, Manfred ; et al. | 2005-06-09 |
Method for magnetic recording on patterned multilevel perpendicular media using variable write current
Grant 6,882,488 - Albrecht , et al. April 19, 2 | 2005-04-19 |
Method for magnetic recording on patterned multilevel perpendicular media using thermal assistance and fixed write current
Grant 6,865,044 - Albrecht , et al. March 8, 2 | 2005-03-08 |
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