Patent | Date |
---|
Highly Efficient Gallium Nitride Based Light Emitting Diodes Via Surface Roughening App 20210210657 - Fujii; Tetsuo ;   et al. | 2021-07-08 |
Highly efficient gallium nitride based light emitting diodes via surface roughening Grant 10,985,293 - Fujii , et al. April 20, 2 | 2021-04-20 |
Highly Efficient Gallium Nitride Based Light Emitting Diodes Via Surface Roughening App 20200212258 - Fujii; Tetsuo ;   et al. | 2020-07-02 |
Highly efficient gallium nitride based light emitting diodes via surface roughening Grant 10,446,714 - Fujii , et al. Oc | 2019-10-15 |
Metal-based optical device enabling efficient light generation from emitters on a high-index absorbing substrate Grant 10,211,428 - Russell , et al. Feb | 2019-02-19 |
Metal-based Optical Device Enabling Efficient Light Generation From Emitters On A High-index Absorbing Substrate App 20170104180 - Russell; Kasey Joe ;   et al. | 2017-04-13 |
Highly Efficient Gallium Nitride Based Light Emitting Diodes Via Surface Roughening App 20140252396 - Fujii; Tetsuo ;   et al. | 2014-09-11 |
Highly efficient gallium nitride based light emitting diodes via surface roughening Grant 8,766,296 - Fujii , et al. July 1, 2 | 2014-07-01 |
Photoelectrochemical etching for chip shaping of light emitting diodes Grant 8,569,085 - Tamboli , et al. October 29, 2 | 2013-10-29 |
SELECTIVE DRY ETCHING OF N-FACE (Al,In,Ga)N HETEROSTRUCTURES App 20130099277 - Speck; James S. ;   et al. | 2013-04-25 |
Photoelectrochemical etching for laser facets Grant 8,263,500 - Tamboli , et al. September 11, 2 | 2012-09-11 |
Optoelectronic Devices With Embedded Void Structures App 20120018758 - Matioli; Elison de Nazareth ;   et al. | 2012-01-26 |
Photoelectrochemical Etching For Laser Facets App 20100195684 - Tamboli; Adele C. ;   et al. | 2010-08-05 |
Highly efficient group-III nitride based light emitting diodes via fabrication of structures on an N-face surface Grant 7,704,763 - Fujii , et al. April 27, 2 | 2010-04-27 |
Photoelectrochemical Etching For Chip Shaping Of Light Emitting Diodes App 20100090240 - Tamboli; Adele ;   et al. | 2010-04-15 |
Highly Efficient Gallium Nitride Based Light Emitting Diodes Via Surface Roughening App 20100025717 - Fujii; Tetsuo ;   et al. | 2010-02-04 |
Control of photoelectrochemical (PEC) etching by modification of the local electrochemical potential of the semiconductor structure relative to the electrolyte Grant 7,550,395 - Hu , et al. June 23, 2 | 2009-06-23 |
Ion Beam Treatment For The Structural Integrity Of Air-gap Iii-nitride Devices Produced By The Photoelectrochemical (pec) Etching App 20080182420 - Hu; Evelyn L. ;   et al. | 2008-07-31 |
Highly efficient gallium nitride based light emitting diodes via surface roughening App 20070121690 - Fujii; Tetsuo ;   et al. | 2007-05-31 |
Control of photoelectrochemical (PEC) etching by modification of the local electrochemical potential of the semiconductor structure relative to the electrolyte App 20060110926 - Hu; Evelyn L. ;   et al. | 2006-05-25 |
Photoelectrochemical undercut etching of semiconductor material Grant 6,884,740 - Hu , et al. April 26, 2 | 2005-04-26 |
Photoelectrochemical undercut etching of semiconductor material App 20030045120 - Hu, Evelyn L. ;   et al. | 2003-03-06 |
Fabrication technique for junction devices Grant 4,370,359 - Fetter , et al. January 25, 1 | 1983-01-25 |
High resolution two-layer resists Grant 4,352,870 - Howard , et al. October 5, 1 | 1982-10-05 |
Reactive ion etching of III-V compounds including InP, GaAs-InP and GaAlAs Grant 4,326,911 - Howard , et al. April 27, 1 | 1982-04-27 |
Superconducting junctions utilizing a binary semiconductor barrier Grant 4,145,699 - Hu , et al. March 20, 1 | 1979-03-20 |