loadpatents
name:-0.018519163131714
name:-0.01435399055481
name:-0.0036079883575439
Hu; Evelyn L. Patent Filings

Hu; Evelyn L.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Hu; Evelyn L..The latest application filed is for "highly efficient gallium nitride based light emitting diodes via surface roughening".

Company Profile
4.16.14
  • Hu; Evelyn L. - Cambridge MA
  • Hu; Evelyn L. - Goleta CA US
  • Hu; Evelyn L. - Santa Barbara CA
  • Hu; Evelyn L. - Somerset NJ
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Highly Efficient Gallium Nitride Based Light Emitting Diodes Via Surface Roughening
App 20210210657 - Fujii; Tetsuo ;   et al.
2021-07-08
Highly efficient gallium nitride based light emitting diodes via surface roughening
Grant 10,985,293 - Fujii , et al. April 20, 2
2021-04-20
Highly Efficient Gallium Nitride Based Light Emitting Diodes Via Surface Roughening
App 20200212258 - Fujii; Tetsuo ;   et al.
2020-07-02
Highly efficient gallium nitride based light emitting diodes via surface roughening
Grant 10,446,714 - Fujii , et al. Oc
2019-10-15
Metal-based optical device enabling efficient light generation from emitters on a high-index absorbing substrate
Grant 10,211,428 - Russell , et al. Feb
2019-02-19
Metal-based Optical Device Enabling Efficient Light Generation From Emitters On A High-index Absorbing Substrate
App 20170104180 - Russell; Kasey Joe ;   et al.
2017-04-13
Highly Efficient Gallium Nitride Based Light Emitting Diodes Via Surface Roughening
App 20140252396 - Fujii; Tetsuo ;   et al.
2014-09-11
Highly efficient gallium nitride based light emitting diodes via surface roughening
Grant 8,766,296 - Fujii , et al. July 1, 2
2014-07-01
Photoelectrochemical etching for chip shaping of light emitting diodes
Grant 8,569,085 - Tamboli , et al. October 29, 2
2013-10-29
SELECTIVE DRY ETCHING OF N-FACE (Al,In,Ga)N HETEROSTRUCTURES
App 20130099277 - Speck; James S. ;   et al.
2013-04-25
Photoelectrochemical etching for laser facets
Grant 8,263,500 - Tamboli , et al. September 11, 2
2012-09-11
Optoelectronic Devices With Embedded Void Structures
App 20120018758 - Matioli; Elison de Nazareth ;   et al.
2012-01-26
Photoelectrochemical Etching For Laser Facets
App 20100195684 - Tamboli; Adele C. ;   et al.
2010-08-05
Highly efficient group-III nitride based light emitting diodes via fabrication of structures on an N-face surface
Grant 7,704,763 - Fujii , et al. April 27, 2
2010-04-27
Photoelectrochemical Etching For Chip Shaping Of Light Emitting Diodes
App 20100090240 - Tamboli; Adele ;   et al.
2010-04-15
Highly Efficient Gallium Nitride Based Light Emitting Diodes Via Surface Roughening
App 20100025717 - Fujii; Tetsuo ;   et al.
2010-02-04
Control of photoelectrochemical (PEC) etching by modification of the local electrochemical potential of the semiconductor structure relative to the electrolyte
Grant 7,550,395 - Hu , et al. June 23, 2
2009-06-23
Ion Beam Treatment For The Structural Integrity Of Air-gap Iii-nitride Devices Produced By The Photoelectrochemical (pec) Etching
App 20080182420 - Hu; Evelyn L. ;   et al.
2008-07-31
Highly efficient gallium nitride based light emitting diodes via surface roughening
App 20070121690 - Fujii; Tetsuo ;   et al.
2007-05-31
Control of photoelectrochemical (PEC) etching by modification of the local electrochemical potential of the semiconductor structure relative to the electrolyte
App 20060110926 - Hu; Evelyn L. ;   et al.
2006-05-25
Photoelectrochemical undercut etching of semiconductor material
Grant 6,884,740 - Hu , et al. April 26, 2
2005-04-26
Photoelectrochemical undercut etching of semiconductor material
App 20030045120 - Hu, Evelyn L. ;   et al.
2003-03-06
Fabrication technique for junction devices
Grant 4,370,359 - Fetter , et al. January 25, 1
1983-01-25
High resolution two-layer resists
Grant 4,352,870 - Howard , et al. October 5, 1
1982-10-05
Reactive ion etching of III-V compounds including InP, GaAs-InP and GaAlAs
Grant 4,326,911 - Howard , et al. April 27, 1
1982-04-27
Superconducting junctions utilizing a binary semiconductor barrier
Grant 4,145,699 - Hu , et al. March 20, 1
1979-03-20

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