| Patent | Date |
|---|
Pixel circuit
Grant 9,842,891 - Yeh , et al. December 12, 2 | 2017-12-12 |
Pixel Circuit
App 20170323933 - YEH; Chi-Yu ; et al. | 2017-11-09 |
Pixel circuit
Grant 9,755,007 - Yeh , et al. September 5, 2 | 2017-09-05 |
Pixel Circuit
App 20170133447 - YEH; Chi-Yu ; et al. | 2017-05-11 |
Manufacturing method of light emitting device
Grant 8,765,506 - Yang , et al. July 1, 2 | 2014-07-01 |
Light emitting device having a patterned conductive layer with at least a passivated side surface
Grant 8,723,190 - Yang , et al. May 13, 2 | 2014-05-13 |
Manufacturing Method Of Light Emitting Device
App 20130309787 - Yang; Chao-Shun ; et al. | 2013-11-21 |
Light Emitting Device
App 20130299870 - Yang; Chao-Shun ; et al. | 2013-11-14 |
Light emitting device with an electrode having an dual metal alloy
Grant 8,563,989 - Yang , et al. October 22, 2 | 2013-10-22 |
Light Emitting Device And Manufacturing Method Thereof
App 20130153949 - Yang; Chao-Shun ; et al. | 2013-06-20 |
Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layer
Grant 7,659,587 - Yeo , et al. February 9, 2 | 2010-02-09 |
Complementary Metal Oxide Semiconductor Transistor Technology Using Selective Epitaxy of a Strained Silicon Germanium Layer
App 20070205468 - Yeo; Yee-Chia ; et al. | 2007-09-06 |
Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layer
Grant 7,226,832 - Yeo , et al. June 5, 2 | 2007-06-05 |
MOSFET device with a strained channel
Grant 7,202,139 - Yeo , et al. April 10, 2 | 2007-04-10 |
Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layer
App 20060008958 - Yeo; Yee-Chia ; et al. | 2006-01-12 |
Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layer
Grant 6,953,972 - Yeo , et al. October 11, 2 | 2005-10-11 |
Strained silicon layer semiconductor product employing strained insulator layer
Grant 6,924,181 - Huang , et al. August 2, 2 | 2005-08-02 |
Multiple-thickness gate oxide formed by oxygen implantation
Grant 6,855,994 - King , et al. February 15, 2 | 2005-02-15 |
Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layer
App 20050009263 - Yeo, Yee-Chia ; et al. | 2005-01-13 |
Mosfet device with a strained channel
App 20050003599 - Yeo, Yee-Chia ; et al. | 2005-01-06 |
Strained silicon layer semiconductor product employing strained insulator layer
App 20040159834 - Huang, Chien-Chao ; et al. | 2004-08-19 |
Multiple-thickness gate oxide formed by oxygen implantation
Grant 6,753,229 - King , et al. June 22, 2 | 2004-06-22 |
Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layer
Grant 6,703,271 - Yeo , et al. March 9, 2 | 2004-03-09 |
Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layer
App 20030162348 - Yeo, Yee-Chia ; et al. | 2003-08-28 |
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