Hsu; Heng-Kai

Patent Applications and Registrations

Patent applications and USPTO patent grants for Hsu; Heng-Kai.The latest application filed is for "oxides with thin metallic layers as transparent ohmic contacts for p-type and n-type gallium nitride".

Company Profile

0.3.9

Hsu; Heng-Kai - Hisnchu TW
Hsu; Heng Kai - Hsinchu City TW
Hsu; Heng-Kai - Hsinchu TW

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Oxides with thin metallic layers as transparent ohmic contacts for p-type and n-type gallium nitride Grant 9,306,126 - Hu , et al. April 5, 2	2016-04-05
Zinc stannate ohmic contacts for p-type gallium nitride Grant 9,246,062 - Hu , et al. January 26, 2	2016-01-26
Oxides with Thin Metallic Layers as Transparent Ohmic Contacts for P-Type and N-Type Gallium Nitride App 20160013367 - Hu; Jianhua ; et al.	2016-01-14
Low-Temperature Fabrication of Transparent Conductive Contacts for p-GaN and n-GaN App 20150318446 - Hu; Jianhua ; et al.	2015-11-05
Zinc Stannate Ohmic Contacts for P-Type Gallium Nitride App 20150311397 - Hu; Jianhua ; et al.	2015-10-29
TCOs for Heterojunction Solar Cells App 20140261660 - Hu; Jianhua ; et al.	2014-09-18
Method For Preparing Bottle-shaped Deep Trenches App 20080242096 - Hsu; Heng Kai	2008-10-02
Semiconductor device App 20080105934 - Hsu; Heng Kai	2008-05-08
Gate structure and method for preparing the same App 20060284272 - Hsu; Heng Kai	2006-12-21
Method of controlling implant dosage and pressure compensation factor in-situ Grant 7,057,191 - Hsu , et al. June 6, 2	2006-06-06
Method of controlling implant dosage and pressure compensation factor in-situ App 20050092940 - Hsu, Heng-Kai ; et al.	2005-05-05
Method of prohibiting from producing protrusion alongside silicide layer of gate App 20020058410 - Sung, Ben ; et al.	2002-05-16

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