loadpatents
Patent applications and USPTO patent grants for Hsiung; Chang-Po.The latest application filed is for "high voltage semiconductor device and manufacturing method thereof".
Patent | Date |
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Buried channel metal-oxide-semiconductor field-effect transistor (MOSFET) and forming method thereof Grant 11,437,512 - Hsiung September 6, 2 | 2022-09-06 |
High Voltage Semiconductor Device And Manufacturing Method Thereof App 20220209009 - Yang; Tsung-Yu ;   et al. | 2022-06-30 |
Semiconductor Structure App 20220208760 - Hsiung; Chang-Po ;   et al. | 2022-06-30 |
Semiconductor Device And Manufacturing Method Thereof App 20220085210 - Hsiung; Chang-Po ;   et al. | 2022-03-17 |
Semiconductor transistor and fabrication method thereof Grant 11,217,693 - Hsiung , et al. January 4, 2 | 2022-01-04 |
Buried Channel Metal-oxide-semiconductor Field-effect Transistor (mosfet) And Forming Method Thereof App 20210399132 - Hsiung; Chang-Po | 2021-12-23 |
Semiconductor Transistor And Fabrication Method Thereof App 20210167208 - Hsiung; Chang-Po ;   et al. | 2021-06-03 |
Method of forming transistor with dual spacer Grant 10,475,903 - Wang , et al. Nov | 2019-11-12 |
Transistor with dual spacer and forming method thereof Grant 10,453,938 - Wang , et al. Oc | 2019-10-22 |
Semiconductor device Grant 10,411,088 - Hsiung , et al. Sept | 2019-09-10 |
Transistor With Dual Spacer And Forming Method Thereof App 20190157418 - Wang; Chia-Ling ;   et al. | 2019-05-23 |
Method Of Forming Transistor With Dual Spacer App 20190157421 - Wang; Chia-Ling ;   et al. | 2019-05-23 |
High voltage transistor and fabrication method thereof Grant 10,276,710 - Li , et al. | 2019-04-30 |
Semiconductor Transistor Device App 20190103460 - Hsiung; Chang-Po ;   et al. | 2019-04-04 |
Semiconductor Device App 20180233556 - Hsiung; Chang-Po ;   et al. | 2018-08-16 |
Semiconductor device and method of forming the same Grant 9,972,678 - Hsiung , et al. May 15, 2 | 2018-05-15 |
Semiconductor Device And Method Of Forming The Same App 20180102408 - Hsiung; Chang-Po ;   et al. | 2018-04-12 |
Method of manufacturing semiconductor device with shallow trench isolation (STI) having edge profile Grant 9,653,343 - Chang , et al. May 16, 2 | 2017-05-16 |
Method of fabricating semiconductor MOS device Grant 9,577,069 - Pu , et al. February 21, 2 | 2017-02-21 |
Semiconductor structure Grant 9,472,661 - Hsiao , et al. October 18, 2 | 2016-10-18 |
Flash Cell And Flash Cell Set App 20160133635 - Hsiung; Chang-Po | 2016-05-12 |
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