HSIEH; Ying-Hao

Patent Applications and Registrations

Patent applications and USPTO patent grants for HSIEH; Ying-Hao.The latest application filed is for "method of fabricating a source/drain recess in a semiconductor device".

Company Profile

1.7.8

HSIEH; Ying-Hao - Hsinchu TW
HSIEH; Ying Hao - Hsinchu City TW
Hsieh; Ying Hao - Clifton Park NY
Hsieh; Ying Hao - Dresden DE

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method Of Fabricating A Source/drain Recess In A Semiconductor Device App 20210391465 - PENG; Eric ; et al.	2021-12-16
Source/drain recess in a semiconductor device Grant 11,107,921 - Peng , et al. August 31, 2	2021-08-31
Source/drain recess in a semiconductor device Grant 10,784,375 - Peng , et al. Sept	2020-09-22
Source/drain Recess In A Semiconductor Device App 20200098919 - PENG; Eric ; et al.	2020-03-26
Method and structure for protecting gates during epitaxial growth Grant 10,446,665 - Cai , et al. Oc	2019-10-15
Source/drain Recess In A Semiconductor Device App 20180315855 - PENG; Eric ; et al.	2018-11-01
Bottle-neck recess in a semiconductor device Grant 10,020,397 - Peng , et al. July 10, 2	2018-07-10
Method And Structure For Protecting Gates During Epitaxial Growth App 20180190787 - Cai; Xiuyu ; et al.	2018-07-05
Method and structure for protecting gates during epitaxial growth Grant 9,941,388 - Cai , et al. April 10, 2	2018-04-10
Method And Structure For Protecting Gates During Epitaxial Growth App 20150372108 - Cai; Xiuyu ; et al.	2015-12-24
Bottle-neck recess in a semiconductor device Grant 9,054,130 - Peng , et al. June 9, 2	2015-06-09
Methods of Forming Faceted Stress-Inducing Stressors Proximate the Gate Structure of a Transistor App 20130175585 - Tan; Chung Foong ; et al.	2013-07-11
Bottle-neck Recess In A Semiconductor Device App 20110049567 - Peng; Eric ; et al.	2011-03-03

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