Hsieh; Kun-Che
Patent Applications and Registrations
Patent applications and USPTO patent grants for Hsieh; Kun-Che.The latest application filed is for "mems structure with an etch stop layer buried within inter-dielectric layer".
- Hsieh; Kun-Che - Tainan TW
- Hsieh; Kun-Che - Tainan City TW
| Patent | Date |
|---|---|
| MEMS structure with an etch stop layer buried within inter-dielectric layer Grant 10,927,000 - Chen , et al. February 23, 2 | 2021-02-23 |
| Mems Structure With An Etch Stop Layer Buried Within Inter-dielectric Layer App 20170036905 - Chen; Li-Che ; et al. | 2017-02-09 |
| Method for forming MEMS structure with an etch stop layer buried within inter-dielectric layer Grant 9,499,399 - Chen , et al. November 22, 2 | 2016-11-22 |
| Method for fabricating an integrated device Grant 8,936,960 - Wang , et al. January 20, 2 | 2015-01-20 |
| Method For Fabricating An Integrated Device App 20150011035 - Wang; Kuan-Yu ; et al. | 2015-01-08 |
| MEMS structure and method of forming the same App 20140367805 - Chen; Li-Che ; et al. | 2014-12-18 |
| Bond pad structure and fabricating method thereof Grant 8,525,354 - Wu , et al. September 3, 2 | 2013-09-03 |
| Bond Pad Structure And Fabricating Method Thereof App 20130093104 - WU; Hui-Min ; et al. | 2013-04-18 |
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