HSIEH; Fu-Yuan

Patent Applications and Registrations

Patent applications and USPTO patent grants for HSIEH; Fu-Yuan.The latest application filed is for "an improved shielded gate trench mosfet with low on-resistance".

Company Profile

0.127.151

HSIEH; Fu-Yuan - New Taipei City TW
Hsieh; Fu-Yuan - New Taipei TW
HSIEH; FU-YUAN - TAINAN CITY TW
Hsieh; Fu-Yuan - Banciao TW
HSIEH; FU-YUAN - Banciao City TW
Hsieh; Fu-Yuan - Kaohsiung N/A TW
HSIEH; Fu-Yuan - US
Hsieh; Fu-Yuan - Hsingchu TW
Hsieh; Fu-Yuan - Hsinchu TW
Hsieh; Fu-Yuan - Sanchong City Taipei County TW
HSIEH; Fu-Yuan - Hsinchu City TW

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
An Improved Shielded Gate Trench Mosfet With Low On-resistance App 20220293786 - HSIEH; Fu-Yuan	2022-09-15
Shielded gate trench MOSFET having improved specific on-resistance structures Grant 11,444,164 - Hsieh September 13, 2	2022-09-13
Trench Mosfets Integrated With Clamped Diodes Having Trench Field Plate Termination To Avoid Breakdown Voltage Degradation App 20220231167 - HSIEH; Fu-Yuan	2022-07-21
Shielded gate trench MOSFET integrated with super barrier rectifier having short channel Grant 11,380,787 - Hsieh July 5, 2	2022-07-05
Shielded Gate Trench Mosfet Having Improved Specific On-resistance Structures App 20220149161 - HSIEH; Fu-Yuan	2022-05-12
Trench MOSFETs integrated with clamped diodes having trench field plate termination to avoid breakdown voltage degradation Grant 11,329,155 - Hsieh May 10, 2	2022-05-10
Sic Super Junction Trench Mosfet App 20220123140 - HSIEH; Fu-Yuan	2022-04-21
Embedding Structure For Wheel Cover Fitted To Aluminum Alloy Wheel Rim App 20220088961 - HSIEH; FU-YUAN	2022-03-24
Shielded Gate Trench Mosfet With Esd Diode Manufactured Using Two Poly-silicon Layers Process App 20220045184 - HSIEH; Fu-Yuan	2022-02-10
Shielded Gate Trench Mosfet Having Super Junction Surrounding Lower Portion Of Trenched Gates App 20210384346 - HSIEH; Fu-Yuan	2021-12-09
Shielded Gate Trench Mosfet Integrated With Super Barrier Rectifier Having Short Channel App 20210351289 - HSIEH; Fu-Yuan	2021-11-11
Super Shielded Gate Trench MOSFET Having Superjunction Structure App 20210320202 - HSIEH; Fu-Yuan	2021-10-14
Shielded Gate Trench Mosfet Having Super Junction Region For Dc/ac Performance Improvement App 20210296488 - HSIEH; Fu-Yuan	2021-09-23
Shielded gate trench MOSFET integrated with super barrier rectifier Grant 11,114,558 - Hsieh September 7, 2	2021-09-07
Trench Mosfets Integrated With Clamped Diodes Having Trench Field Plate Termination To Avoid Breakdown Voltage Degradation App 20210265498 - HSIEH; Fu-Yuan	2021-08-26
Shielded Gate Trench Mosfet With Esd Diode Manufactured Using Two Poly-silicon Layers Process App 20210202471 - HSIEH; Fu-Yuan	2021-07-01
Mosfet With Integrated Esd Protection Diode Having Anode Electrode Connection To Trenched Gates For Increasing Switch Speed App 20210202470 - HSIEH; Fu-Yuan	2021-07-01
Shielded gate trench MOSFET with ESD diode manufactured using two poly-silicon layers process Grant 11,018,127 - Hsieh May 25, 2	2021-05-25
Trench MOSFETs having dummy cells for avalanche capability improvement Grant 11,004,969 - Hsieh May 11, 2	2021-05-11
Termination Of Multiple Stepped Oxide Shielded Gate Trench Mosfet App 20210126124 - HSIEH; Fu-Yuan	2021-04-29
Shielded Gate Trench Mosfet Integrated With Super Barrier Rectifier App 20210119030 - HSIEH; Fu-Yuan	2021-04-22
Shielded Gate Trench Mosfet With Esd Diode Manufactured Using Two Poly-silicon Layers Process App 20210104510 - HSIEH; Fu-Yuan	2021-04-08
Trench Mosfets Having Dummy Cells For Avalanche Capability Improvement App 20210104624 - HSIEH; Fu-Yuan	2021-04-08
Shielded gate trench MOSFETs with floating trenched gates and channel stop trenched gates in termination Grant 10,930,774 - Hsieh February 23, 2	2021-02-23
Trench Mosfets With Oxide Charge Balance Region In Active Area And Junction Charge Balance Region In Termination Area App 20210028305 - HSIEH; Fu-Yuan	2021-01-28
Shielded Gate Trench MOSFETs with Floating Trenched gates and Channel Stop Trenched Gates in Termination App 20210020776 - HSIEH; Fu-Yuan	2021-01-21
Semiconductor power device having shielded gate structure and ESD clamp diode manufactured with less mask process Grant 9,953,969 - Hsieh April 24, 2	2018-04-24
Wheel Cover Of Aluminum Alloy Wheel App 20180072094 - HSIEH; FU-YUAN	2018-03-15
Trench Mosfet Structure And Layout With Separated Shielded Gate App 20170317207 - HSIEH; Fu-Yuan	2017-11-02
Semiconductor Power Device Having Shielded Gate Structure And Esd Clamp Diode Manufactured With Less Mask Process App 20170278837 - HSIEH; Fu-Yuan	2017-09-28
Method for manufacturing a super-junction structures having implanted regions surrounding an N epitaxial layer in deep trench Grant 9,530,867 - Hsieh December 27, 2	2016-12-27
Trench MOSFET with shielded gate and diffused drift region Grant 9,530,882 - Hsieh December 27, 2	2016-12-27
Super-junction trench MOSFETs with closed cell layout having shielded gate Grant 9,412,810 - Hsieh August 9, 2	2016-08-09
Super-junction Trench Mosfets With Closed Cell Layout Having Shielded Gate App 20160163789 - HSIEH; Fu-Yuan	2016-06-09
Super-junction trench MOSFETs with closed cell layout Grant 9,337,328 - Hsieh May 10, 2	2016-05-10
Super-junction Trench Mosfet Integrated With Embedded Trench Schottky Rectifier App 20160104702 - HSIEH; FU-YUAN	2016-04-14
Super-junction trench MOSFET structure Grant 9,293,527 - Hsieh March 22, 2	2016-03-22
Super-junction Structures Having Implanted Regions Surrounding An N Epitaxial Layer In Deep Trench App 20150318379 - HSIEH; FU-YUAN	2015-11-05
Trench Mosfet With Self-aligned Source And Contact Regions Using Three Masks Process App 20150221733 - HSIEH; FU-YUAN	2015-08-06
Super-junction structures having implanted regions surrounding an N epitaxial layer in deep trench Grant 9,099,320 - Hsieh August 4, 2	2015-08-04
Avalanche capability improvement in power semiconductor devices using three masks process Grant 9,018,701 - Hsieh April 28, 2	2015-04-28
Super-junction trench MOSFETs with short terminations Grant 8,999,789 - Hsieh April 7, 2	2015-04-07
Super-junction trench MOSFETs with short terminations Grant 9,000,515 - Hsieh April 7, 2	2015-04-07
Super-junction Structures Having Implanted Regions Surrounding An N Epitaxial Layer In Deep Trench App 20150076594 - HSIEH; FU-YUAN	2015-03-19
Super-junction Trench Mosfets With Short Terminations App 20150037954 - HSIEH; FU-YUAN	2015-02-05
High switching trench MOSFET Grant 8,907,415 - Hsieh December 9, 2	2014-12-09
Super-junction Trench Mosfets With Short Terminations App 20140346593 - HSIEH; FU-YUAN	2014-11-27
Trench MOSFET having a top side drain Grant 8,889,514 - Hsieh November 18, 2	2014-11-18
Trench MOSFET with trenched floating gates having thick trench bottom oxide as termination Grant 8,889,513 - Hsieh November 18, 2	2014-11-18
Trench Mosfet Structure Having Self-aligned Features For Mask Saving And On-resistance Reduction App 20140291753 - HSIEH; FU-YUAN	2014-10-02
Fast switching super-junction trench MOSFETs Grant 8,829,607 - Hsieh September 9, 2	2014-09-09
Shielded gate MOSFET-Schottky rectifier-diode integrated circuits with trenched contact structures Grant 8,816,348 - Hsieh August 26, 2	2014-08-26
Trench Metal Oxide Semiconductor Field Effect Transistor With Embedded Schottky Rectifier Using Reduced Masks Process App 20140213026 - HSIEH; Fu-Yuan	2014-07-31
Touch-sensitive Electronic Device And Method For Controlling Applications Using External Keypad App 20140176471 - HSIEH; FU-YUAN	2014-06-26
Trench MOSFET with trenched floating gates having thick trench bottom oxide as termination Grant 8,759,910 - Hsieh June 24, 2	2014-06-24
Short Channel Trench Mosfets App 20140159149 - HSIEH; Fu-Yuan	2014-06-12
Integrated trench MOSFET with trench Schottky rectifier Grant 8,722,434 - Hsieh May 13, 2	2014-05-13
Trench metal oxide semiconductor field effect transistor with embedded schottky rectifier using reduced masks process Grant 8,723,317 - Hsieh May 13, 2	2014-05-13
Trench Mosfet Having A Top Side Drain App 20140120672 - HSIEH; Fu-Yuan	2014-05-01
Trench metal oxide semiconductor field effect transistor with multiple trenched source-body contacts for reducing gate charge Grant 8,704,297 - Hsieh April 22, 2	2014-04-22
Trench Metal Oxide Semiconductor Field Effect Transistor With Multiple Trenched Source-body Contacts For Reducing Gate Charge App 20140103426 - HSIEH; FU-YUAN	2014-04-17
Semiconductor power device having wide termination trench and self-aligned source regions for mask saving Grant 8,686,468 - Hsieh April 1, 2	2014-04-01
Trench MOSFET having floating dummy cells for avalanche improvement Grant 8,680,610 - Hsieh March 25, 2	2014-03-25
Trench Metal Oxide Semiconductor Field Effect Transistor With Embedded Schottky Rectifier Using Reduced Masks Process App 20140077290 - HSIEH; FU-YUAN	2014-03-20
Semiconductor power device integrated with ESD protection diodes Grant 8,658,492 - Hsieh February 25, 2	2014-02-25
Avalanche Capability Improvement In Power Semiconductor Devices Using Three Masks Process App 20140048872 - HSIEH; FU-YUAN	2014-02-20
Trench MOSFET having a top side drain Grant 8,653,587 - Hsieh February 18, 2	2014-02-18
Trench MOSFET with ultra high cell density and manufacture thereof Grant 8,652,900 - Hsieh February 18, 2	2014-02-18
Low Qgd trench MOSFET integrated with schottky rectifier Grant 8,653,589 - Hsieh February 18, 2	2014-02-18
Super-junction trench MOSFET with multiple trenched source-body contacts Grant 8,648,413 - Hsieh February 11, 2	2014-02-11
Shielded trench MOSFET with multiple trenched floating gates as termination Grant 8,643,092 - Hsieh February 4, 2	2014-02-04
Semiconductor power device having improved termination structure for mask saving Grant 8,614,482 - Hsieh December 24, 2	2013-12-24
Trench Mosfet With Trenched Floating Gates Having Thick Trench Bottom Oxide As Termination App 20130330892 - HSIEH; Fu-Yuan	2013-12-12
Fast switching hybrid IGBT device with trenched contacts Grant 8,598,624 - Hsieh December 3, 2	2013-12-03
Trench Mosfet With Trenched Floating Gates Having Thick Trench Bottom Oxide As Termination App 20130307066 - HSIEH; FU-YUAN	2013-11-21
Trench MOSFET with resurf stepped oxide and diffused drift region Grant 8,587,054 - Hsieh November 19, 2	2013-11-19
Trench Mosfet Structures Using Three Masks Process App 20130299901 - HSIEH; FU-YUAN	2013-11-14
Super-junction trench MOSFET having deep trenches with buried voids Grant 8,575,690 - Hsieh November 5, 2	2013-11-05
Semiconductor power device with embedded diodes and resistors using reduced mask processes Grant 8,569,780 - Hsieh October 29, 2	2013-10-29
MOSFET-Schottky rectifier-diode integrated circuits with trench contact structures Grant 8,569,765 - Hsieh October 29, 2	2013-10-29
Super-junction trench MOSFET with multiple trenched gates in unit cell Grant 8,564,058 - Hsieh October 22, 2	2013-10-22
Trench MOSFET with trenched floating gates in termination Grant 8,564,052 - Hsieh October 22, 2	2013-10-22
Trench MOSFET with trenched floating gates in termination Grant 8,564,053 - Hsieh October 22, 2	2013-10-22
Trench semiconductor power device having active cells under gate metal pad Grant 8,564,054 - Hsieh October 22, 2	2013-10-22
Method for manufacturing a power semiconductor device Grant 8,563,381 - Hsieh October 22, 2	2013-10-22
Semiconductor power devices integrated with a trenched clamp diode Grant 8,564,047 - Hsieh October 22, 2	2013-10-22
Trench Mosfet With Shielded Electrode And Avalanche Enhancement Region App 20130256786 - HSIEH; Fu-Yuan	2013-10-03
Semiconductor Power Device Integrated With Esd Protection Diodes App 20130234238 - HSIEH; Fu-Yuan	2013-09-12
Semiconductor Power Device Integrated With Clamp Diodes Having Dopant Out-diffusion Suppression Layers App 20130234237 - HSIEH; Fu-Yuan	2013-09-12
Method of manufacturing trench MOSFET structures using three masks process Grant 8,530,313 - Hsieh September 10, 2	2013-09-10
Trench MOSFET with trenched floating gates having thick trench bottom oxide as termination Grant 8,525,255 - Hsieh September 3, 2	2013-09-03
Trench MOSFET with trenched floating gates and trenched channel stop gates in termination Grant 8,519,477 - Hsieh August 27, 2	2013-08-27
Integrated Trench Mosfet With Trench Schottky Rectifier App 20130214350 - HSIEH; FU-YUAN	2013-08-22
Trench Mosfet Having A Top Side Drain App 20130207172 - HSIEH; Fu-Yuan	2013-08-15
Trench MOSFET layout with trenched floating gates and trenched channel stop gates in termination Grant 8,487,372 - Hsieh July 16, 2	2013-07-16
Trench Mosfet With Resurf Stepped Oxide And Diffused Drift Region App 20130168760 - HSIEH; Fu-Yuan	2013-07-04
Trench Semiconductor Power Device Having Active Cells Under Gate Metal Pad App 20130168764 - HSIEH; Fu-Yuan	2013-07-04
Semiconductor Power Device Having Improved Termination Structure For Mask Saving App 20130168761 - HSIEH; Fu-Yuan	2013-07-04
Semiconductor Power Device Having Wide Termination Trench And Self-aligned Source Regions For Mask Saving App 20130168731 - HSIEH; FU-YUAN	2013-07-04
Semiconductor power device integrated with improved gate source ESD clamp diodes Grant 8,466,514 - Hsieh June 18, 2	2013-06-18
Trench Mosfet With Split Trenched Gate Structures In Cell Corners For Gate Charge Reduction App 20130113038 - HSIEH; Fu-Yuan	2013-05-09
Integrated trench MOSFET with trench Schottky rectifier Grant 8,426,913 - Hsieh April 23, 2	2013-04-23
A Semiconductor Power Device Integratred Withimproved Gate Source Esd Clamp Diodes App 20130092976 - HSIEH; Fu-Yuan	2013-04-18
Semiconductor Power Devices Integrated With A Trenched Clamp Diode App 20130075810 - HSIEH; Fu-Yuan	2013-03-28
Semiconductor Power Device With Embedded Diodes And Resistors Using Reduced Mask Processes App 20130075809 - HSIEH; Fu-Yuan	2013-03-28
Power semiconductor device comprising a plurality of trench IGBTs Grant 8,384,194 - Hsieh February 26, 2	2013-02-26
Trench MOSFET with body region having concave-arc shape Grant 8,378,392 - Hsieh February 19, 2	2013-02-19
Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradation Grant 8,378,411 - Hsieh February 19, 2	2013-02-19
Method for manufacturing a super-junction trench MOSFET with resurf stepped oxides and trenched contacts Grant 8,372,717 - Hsieh February 12, 2	2013-02-12
Super-junction trench MOSFET with resurf stepped oxides and trenched contacts Grant 8,373,224 - Hsieh February 12, 2	2013-02-12
Super-junction trench MOSFET with Resurf stepped oxides and split gate electrodes Grant 8,373,225 - Hsieh February 12, 2	2013-02-12
Mosfet-schottky Rectifier-diode Integrated Circuits With Trench Contact Structures App 20130020577 - HSIEH; Fu-Yuan	2013-01-24
Shielded Gate Mosfet-schottky Rectifier-diode Integrated Circuits With Trenched Contact Structures App 20130020576 - HSIEH; Fu-Yuan	2013-01-24
Method Of Manufacturing Trench Mosfet Using Three Masks Process Having Tilt- Angle Source Implants App 20130001684 - HSIEH; FU-YUAN	2013-01-03
Fast Switching Hybrid Igbt Device With Trenched Contacts App 20120313141 - HSIEH; Fu-Yuan	2012-12-13
Method For Manufacturing A Power Semiconductor Device App 20120309148 - HSIEH; Fu-Yuan	2012-12-06
Power Semiconductor Device Comprising A Plurality Of Trench Igbts App 20120305985 - HSIEH; Fu-Yuan	2012-12-06
High Switching Trench Mosfet App 20120292694 - HSIEH; Fu-Yuan	2012-11-22
LDMOS with double LDD and trenched drain Grant 8,314,000 - Hsieh November 20, 2	2012-11-20
Trench Mosfet With Trenched Floating Gates And Trenched Channel Stop Gates In Termination App 20120261737 - HSIEH; Fu-Yuan	2012-10-18
Trench MOSFET having shielded electrode integrated with trench Schottky rectifier Grant 8,274,113 - Hsieh September 25, 2	2012-09-25
Trench MOSFET with etching buffer layer in trench gate Grant 8,269,273 - Hsieh September 18, 2	2012-09-18
Avalanche capability improvement in power semiconductor devices Grant 8,264,035 - Hsieh September 11, 2	2012-09-11
Igbt With Integrated Mosfet And Fast Switching Diode App 20120217541 - HSIEH; Fu-Yuan	2012-08-30
Fast switching lateral insulated gate bipolar transistor (LIGBT) with trenched contacts Grant 8,253,164 - Hsieh August 28, 2	2012-08-28
Trench Mosfet With Trenched Floating Gates In Termination App 20120211831 - HSIEH; Fu-Yuan	2012-08-23
Trench Mosfet With Ultra High Cell Density And Manufacture Thereof App 20120196416 - HSIEH; Fu-Yuan	2012-08-02
Super-junction Trench Mosfet With Multiple Trenched Source-body Contacts App 20120187477 - HSIEH; Fu-Yuan	2012-07-26
Method of making a trench MOSFET having improved avalanche capability using three masks process Grant 8,222,108 - Hsieh July 17, 2	2012-07-17
Trench Mos Rectifier App 20120175700 - HSIEH; Fu-Yuan	2012-07-12
Trench Mosfet With Super Pinch-off Regions And Self-aligned Trenched Contact App 20120175699 - HSIEH; Fu-Yuan	2012-07-12
Semiconductor Devices With Gate-source Esd Diode And Gate-drain Clamp Diode App 20120175737 - HSIEH; Fu-Yuan	2012-07-12
Semiconductor devices with gate-source ESD diode and gate-drain clamp diode Grant 8,217,422 - Hsieh July 10, 2	2012-07-10
Fast Switching Lateral Insulated Gate Bipolar Transistor (ligbt) With Trenched Contacts App 20120161201 - HSIEH; Fu-Yuan	2012-06-28
Trench MOSFET with ultra high cell density and manufacture thereof Grant 8,178,922 - Hsieh May 15, 2	2012-05-15
Power semiconductor devices integrated with clamp diodes sharing same gate metal pad Grant 8,164,162 - Hsieh April 24, 2	2012-04-24
MOSFET structure with guard ring Grant 8,164,139 - Hsieh April 24, 2	2012-04-24
Semiconductor devices with gate-source ESD diode and gate-drain clamp diode Grant 8,164,114 - Hsieh April 24, 2	2012-04-24
Trench Mosfet With Super Pinch-off Regions App 20120080748 - HSIEH; Fu-Yuan	2012-04-05
Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradation Grant 8,148,773 - Hsieh April 3, 2	2012-04-03
Super-junction Trench Mosfet With Resurf Stepped Oxides And Trenched Contacts App 20120074489 - HSIEH; Fu-Yuan	2012-03-29
Super-junction Trench Mosfet With Resurf Stepped Oxides And Split Gate Electrodes App 20120061754 - HSIEH; Fu-Yuan	2012-03-15
Method For Manufacturing A Super-junction Trench Mosfet With Resurf Stepped Oxides And Trenched Contacts App 20120064684 - HSIEH; Fu-Yuan	2012-03-15
LDMOS with double LDD and trenched drain Grant 8,120,106 - Hsieh February 21, 2	2012-02-21
Trench Mosfet Having Floating Dummy Cells For Avalanche Improvement App 20120032261 - HSIEH; Fu-Yuan	2012-02-09
Method for making a trench MOSFET with shallow trench structures Grant 8,105,903 - Hsieh January 31, 2	2012-01-31
Method Of Manufacturing Trench Mosfet Structures Using Three Masks Process App 20120021580 - HSIEH; Fu-Yuan	2012-01-26
MSD integrated circuits with shallow trench Grant 8,101,993 - Hsieh January 24, 2	2012-01-24
Trench Mosfet With Trenched Floating Gates Having Thick Trench Bottom Oxide As Termination App 20110316075 - HSIEH; Fu-Yuan	2011-12-29
Avalanche capability improvement in power semiconductor devices having dummy cells around edge of active area Grant 8,072,000 - Hsieh December 6, 2	2011-12-06
Super-junction trench MOSFET with resurf step oxide and the method to make the same Grant 8,067,800 - Hsieh November 29, 2	2011-11-29
LOW Qgd TRENCH MOSFET INTEGRATED WITH SCHOTTKY RECTIFIER App 20110284954 - HSIEH; Fu-Yuan	2011-11-24
Trench MOSFET structures using three masks process Grant 8,058,685 - Hsieh November 15, 2	2011-11-15
Semiconductor Devices With Gate-source Esd Diode And Gate-drain Clamp Diode App 20110266593 - Hsieh; Fu-Yuan	2011-11-03
Shielded Trench Mosfet With Multiple Trenched Floating Gates As Termination App 20110254071 - Hsieh; Fu-Yuan	2011-10-20
Trench Mosfet With Trenched Floating Gates In Termination App 20110254070 - HSIEH; Fu-Yuan	2011-10-20
Shielded Trench Mosfet With Multiple Trenched Floating Gates As Termination App 20110254086 - HSIEH; Fu-Yuan	2011-10-20
Trench mosfet with body region having concave-arc shape App 20110248340 - Hsieh; Fu-Yuan	2011-10-13
Method of manufacturing a trench MOSFET having trench contacts integrated with trench Schottky rectifiers having planar contacts Grant 8,034,686 - Hsieh October 11, 2	2011-10-11
Trenched MOSFET with guard ring and channel stop Grant 8,030,702 - Hsieh October 4, 2	2011-10-04
Semiconductor power device layout for stress reduction App 20110233605 - Hsieh; Fu-Yuan	2011-09-29
Avalanche capability improvement in power semiconductor devices App 20110233606 - Hsieh; Fu-Yuan	2011-09-29
MOSFET-Schottky rectifier-diode integrated circuits with trench contact structures for device shrinkage and performance improvement Grant 8,004,036 - Hsieh August 23, 2	2011-08-23
Trench MOSFETS with ESD Zener diode Grant 8,004,009 - Hsieh August 23, 2	2011-08-23
Trench MOSFET with trenched floating gates as termination Grant 7,989,887 - Hsieh August 2, 2	2011-08-02
Power Semiconductor Devices Integrated With Clamp Diodes Having Separated Gate Metal Pads To Avoid Breakdown Voltage Degradation App 20110180844 - HSIEH; Fu-Yuan	2011-07-28
Trench mosfet with ultra high cell density and manufacture thereof App 20110169075 - Hsieh; Fu-Yuan	2011-07-14
Power Semiconductor Devices Integrated With Clamp Diodes Having Separated Gate Metal Pads To Avoid Breakdown Voltage Degradation App 20110169047 - HSIEH; Fu-Yuan	2011-07-14
Ldmos With Double Ldd And Trenched Drain App 20110165748 - HSIEH; Fu-Yuan	2011-07-07
Super-Junction trench mosfet with resurf step oxide and the method to make the same App 20110156139 - Hsieh; Fu-Yuan	2011-06-30
Trench MOSFET with trench gates underneath contact areas of ESD diode for prevention of gate and source shortage Grant 7,956,410 - Hsieh June 7, 2	2011-06-07
Trench MOSFET with trenched floating gates as termination App 20110121386 - Hsieh; Fu-Yuan	2011-05-26
Ldmos With Double Ldd And Trenched Drain App 20110108913 - HSIEH; Fu-Yuan	2011-05-12
Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradation Grant 7,936,014 - Hsieh May 3, 2	2011-05-03
Trench mosfet with high cell density App 20110079844 - Hsieh; Fu-Yuan	2011-04-07
Method for making trench MOSFET with shallow trench structures App 20110070708 - Hsieh; Fu-Yuan	2011-03-24
Trench MOSFET with high cell density App 20110068389 - Hsieh; Fu-Yuan	2011-03-24
LDMOS with double LDD and trenched drain Grant 7,898,026 - Hsieh March 1, 2	2011-03-01
Trench IGBT with trench gates underneath contact areas of protection diodes Grant 7,897,997 - Hsieh March 1, 2	2011-03-01
Structure of trench MOSFET and method for manufacturing the same Grant 7,872,306 - Hsieh January 18, 2	2011-01-18
Method of making a trench MOSFET having improved avalanche capability using three masks process App 20110008939 - Hsieh; Fu-Yuan	2011-01-13
Trench MOSFET with on-resistance reduction App 20110006362 - Hsieh; Fu-Yuan	2011-01-13
Trench MOSFET structures using three masks process App 20110006363 - Hsieh; Fu-Yuan	2011-01-13
Power semiconductor devices integrated with clamp diodes sharing same gate metal pad App 20100314681 - Hsieh; Fu-Yuan	2010-12-16
Trench MOSFET with trench source contact having copper wire bonding Grant 7,847,346 - Chung , et al. December 7, 2	2010-12-07
Trench MOSFETS with ESD Zener diode App 20100289073 - Hsieh; Fu-Yuan	2010-11-18
Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradation App 20100289059 - Hsieh; Fu-Yuan	2010-11-18
Avalanche capability improvement in power semiconductor devices having dummy cells around edge of active area App 20100276728 - Hsieh; Fu-Yuan	2010-11-04
Trench Mosfet Having Trench Contacts Integrated With Trench Schottky Rectifiers Having Planar Contacts App 20100279478 - HSIEH; FU-YUAN	2010-11-04
Low Qgd trench MOSFET integrated with schottky rectifier App 20100264488 - HSIEH; FU-YUAN	2010-10-21
Integrated trench MOSFET and Schottky rectifier with trench contact structure Grant 7,816,732 - Hsieh October 19, 2	2010-10-19
Trench MOSFET structure having improved avalanche capability using three masks process Grant 7,816,720 - Hsieh October 19, 2	2010-10-19
Mosfet Structure With Guard Ring App 20100258856 - HSIEH; Fu-Yuan	2010-10-14
LDMOS with double LDD and trenched drain App 20100237411 - Hsieh; Fu-Yuan	2010-09-23
MSD integrated circuits with shallow trench App 20100237414 - Hsieh; Fu-Yuan	2010-09-23
Trench Moseft With Trench Gates Underneath Contact Areas Of Esd Diode For Prevention Of Gate And Source Shortage App 20100224931 - Hsieh; Fu-Yuan	2010-09-09
Trench MOSFET having trench contacts integrated with trench Schottky rectifiers having planar contacts Grant 7,791,136 - Hsieh September 7, 2	2010-09-07
Metal schemes of trench MOSFET for copper bonding Grant 7,786,528 - Hsieh August 31, 2	2010-08-31
Mosfets with terrace irench gate and improved source-body contact App 20100200912 - Hsieh; Fu-Yuan	2010-08-12
Metal schemes of trench MOSFET for copper bonding App 20100176445 - Hsieh; Fu-Yuan	2010-07-15
Intergrated trench mosfet with trench schottky rectifier App 20100176448 - Hsieh; Fu-Yuan	2010-07-15
MOSFET with source contact in trench and integrated schottky diode App 20100176446 - Hsieh; Fu-Yuan	2010-07-15
Trench Mosfet With Improved Source-body Contact App 20100171173 - HSIEH; FU-YUAN	2010-07-08
Trench MOSFET with trench source contact having copper wire bonding App 20100127323 - Chung; Ming-Tao ; et al.	2010-05-27
Trench MOSFET with terrace gate and self-aligned source trench contact App 20100127324 - Hsieh; Fu-Yuan	2010-05-27
MSD integrated circuits with trench contact structures for device shrinkage and performance improvement App 20100123185 - Hsieh; Fu-Yuan	2010-05-20
Trench Mosfet With Short Channel Formed By Pn Double Epitaxial Layers App 20100090270 - Hsieh; Fu-Yuan	2010-04-15
Trench Mosfet With Shallow Trench Contact App 20100090274 - Hsieh; Fu-Yuan	2010-04-15
Trench Mosfet With Etching Buffer Layer In Trench Gate App 20100072543 - Hsieh; Fu-Yuan	2010-03-25
Trenched Mosfet With Guard Ring And Channel Stop App 20100038711 - HSIEH; Fu-Yuan	2010-02-18
Trench Mosfet With Shallow Trench For Gate Charge Reduction App 20090315103 - Hsieh; Fu-Yuan	2009-12-24
Integrated trench Mosfet and Schottky Rectifier with trench contact structure App 20090315106 - Hsieh; Fu-Yuan	2009-12-24
Integrated Trench Mosfet And Junction Barrier Schottky Rectifier With Trench Contact Structures App 20090315107 - Hsieh; Fu-Yuan	2009-12-24
Trench MOSFET with shallow trench structures App 20090315104 - Hsieh; Fu-Yuan	2009-12-24
Testing Device On Water For Monitoring Vertical Mosfet On-resistance App 20090309097 - Hsieh; Fu-Yuan	2009-12-17
Trench Schottky With Multiple Epi Structure App 20090309181 - Hsieh; Fu-Yuan	2009-12-17
Method Of Fabricating Collector Of Igbt App 20090309130 - Hsieh; Fu-Yuan ; et al.	2009-12-17
Trenched MOSFET with trenched source contact Grant 7,629,634 - Hsieh December 8, 2	2009-12-08
Integrated trench MOSFET and junction barrier schottky rectifier with trench contact structures Grant 7,626,231 - Hsieh December 1, 2	2009-12-01
Mosfet Structure With Guard Ring App 20090267140 - HSIEH; Fu-Yuan	2009-10-29
Trenched Mosfet With Guard Ring And Channel Stop App 20090267143 - HSIEH; Fu-Yuan	2009-10-29
Trenched Mosfet With Trenched Source Contact App 20090212359 - Hsieh; Fu-Yuan	2009-08-27
Trench IGBT with trench gates underneath contact areas of protection diodes App 20090212321 - HSIEH; FU-YUAN	2009-08-27
Trench Moseft With Trench Gates Underneath Contact Areas Of Esd Diode For Prevention Of Gate And Source Shortate App 20090212354 - Hsieh; Fu-Yuan	2009-08-27
Structure of Trench MOSFET and Method for Manufacturing the same App 20080169505 - Hsieh; Fu-Yuan	2008-07-17