loadpatents
Patent applications and USPTO patent grants for HSIEH; Bor Chiuan.The latest application filed is for "gap patterning for metal-to-source/drain plugs in a semiconductor device".
Patent | Date |
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Gap Patterning For Metal-to-source/drain Plugs In A Semiconductor Device App 20220270931 - HUANG; Yu-Lien ;   et al. | 2022-08-25 |
Hybrid Film Scheme For Self-aligned Contact App 20220246473 - Lu; Jian-Hong ;   et al. | 2022-08-04 |
Gap patterning for metal-to-source/drain plugs in a semiconductor device Grant 11,355,399 - Huang , et al. June 7, 2 | 2022-06-07 |
Seamless Gap Fill App 20220157934 - Huang; Yen-Chun ;   et al. | 2022-05-19 |
Seamless gap fill Grant 11,239,310 - Huang , et al. February 1, 2 | 2022-02-01 |
Gap Patterning For Metal-to-source/drain Plugs In A Semiconductor Device App 20210366780 - HUANG; Yu-Lien ;   et al. | 2021-11-25 |
System and method for supplying a precursor for an atomic layer deposition (ALD) process Grant 11,053,584 - Hsieh , et al. July 6, 2 | 2021-07-06 |
Seamless Gap Fill App 20200295131 - HUANG; Yen-Chun ;   et al. | 2020-09-17 |
Seamless gap fill Grant 10,672,866 - Huang , et al. | 2020-06-02 |
System and Method for Supplying a Precursor for an Atomic Layer Deposition (ALD) Process App 20200040450 - Hsieh; Bor-Chiuan ;   et al. | 2020-02-06 |
FinFETs and methods of forming the same Grant 10,510,867 - Hsieh , et al. Dec | 2019-12-17 |
System and method for supplying a precursor for an atomic layer deposition (ALD) process Grant 10,443,127 - Hsieh , et al. Oc | 2019-10-15 |
FinFETs and Methods of Forming the Same App 20190140076 - Hsieh; Bor Chiuan ;   et al. | 2019-05-09 |
FinFETs and methods of forming the same Grant 10,157,997 - Hsieh , et al. Dec | 2018-12-18 |
Seamless Gap Fill App 20180350906 - Huang; Yen-Chun ;   et al. | 2018-12-06 |
FinFETs and Methods of Forming the Same App 20180315830 - Hsieh; Bor Chiuan ;   et al. | 2018-11-01 |
Seamless gap fill Grant 10,084,040 - Huang , et al. September 25, 2 | 2018-09-25 |
Seamless Gap Fill App 20170194424 - Huang; Yen-Chun ;   et al. | 2017-07-06 |
High performance self aligned contacts and method of forming same Grant 9,437,712 - Huang , et al. September 6, 2 | 2016-09-06 |
Sidewall free CESL for enlarging ILD gap-fill window Grant 9,218,974 - Chung , et al. December 22, 2 | 2015-12-22 |
High Performance Self Aligned Contacts and Method of Forming Same App 20150255275 - Huang; Yen-Chun ;   et al. | 2015-09-10 |
System And Method For Supplying A Precursor For An Atomic Layer Deposition (ald) Process App 20150125591 - HSIEH; BOR-CHIUAN ;   et al. | 2015-05-07 |
Sidewall-free CESL for enlarging ILD gap-fill window Grant 8,999,834 - Chung , et al. April 7, 2 | 2015-04-07 |
Method of dual epi process for semiconductor device Grant 8,900,957 - Chung , et al. December 2, 2 | 2014-12-02 |
Method of dual EPI process for semiconductor device Grant 8,900,956 - Chung , et al. December 2, 2 | 2014-12-02 |
Sidewall-free Cesl For Enlarging Ild Gap-fill Window App 20140170846 - Chung; Han-Pin ;   et al. | 2014-06-19 |
Method Of Dual Epi Process For Semicondcutor Device App 20140073097 - Chung; Han-Pin ;   et al. | 2014-03-13 |
Method Of Dual Epi Process For Semiconductor Device App 20140073096 - Chung; Han-Pin ;   et al. | 2014-03-13 |
Method of dual EPI process for semiconductor device Grant 8,609,497 - Chung , et al. December 17, 2 | 2013-12-17 |
Sidewall-Free CESL for Enlarging ILD Gap-Fill Window App 20130270651 - Chung; Han-Pin ;   et al. | 2013-10-17 |
CMOS structure with multiple spacers Grant 8,299,508 - Hsieh , et al. October 30, 2 | 2012-10-30 |
Method of Dual EPI Process For Semiconductor Device App 20110201164 - Chung; Han-Pin ;   et al. | 2011-08-18 |
Method of forming a shallow trench isolation structure Grant 7,947,551 - Syue , et al. May 24, 2 | 2011-05-24 |
Isolation Structure For Semiconductor Device App 20110084355 - Lin; Hsien-Hsin ;   et al. | 2011-04-14 |
Cmos Structure With Multiple Spacers App 20110031538 - HSIEH; Bor Chiuan ;   et al. | 2011-02-10 |
Sidewall-Free CESL for Enlarging ILD Gap-Fill Window App 20100314690 - Chung; Han-Pin ;   et al. | 2010-12-16 |
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