Hsieh; Alice Pei-Shan

Patent Applications and Registrations

Patent applications and USPTO patent grants for Hsieh; Alice Pei-Shan.The latest application filed is for "power semiconductor device".

Company Profile

4.10.13

Hsieh; Alice Pei-Shan - Munich DE
Hsieh; Alice Pei-Shan - Cambridge GB
Hsieh; Alice Pei-Shan - Unterhaching DE

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Power semiconductor device Grant 10,998,399 - Hsieh , et al. May 4, 2	2021-05-04
Semiconductor device comprising a barrier region Grant 10,923,578 - Leendertz , et al. February 16, 2	2021-02-16
Power Semiconductor Device App 20200013854 - Hsieh; Alice Pei-Shan ; et al.	2020-01-09
Semiconductor Device Comprising a Barrier Region App 20190189772 - Leendertz; Caspar ; et al.	2019-06-20
Bipolar semiconductor device with multi-trench enhancement regions Grant 10,164,078 - Udrea , et al. Dec	2018-12-25
Power semiconductor device with charge balance design Grant 10,147,786 - Hsieh , et al. De	2018-12-04
Semiconductor device having a superjunction structure Grant 10,115,812 - Udrea , et al. October 30, 2	2018-10-30
Power Semiconductor Device with Charge Balance Design App 20180197948 - Hsieh; Alice Pei-Shan ; et al.	2018-07-12
Bipolar semiconductor device with sub-cathode enhancement regions Grant 9,871,128 - Udrea , et al. January 16, 2	2018-01-16
Semiconductor Device Having a Superjunction Structure App 20180012983 - Udrea; Florin ; et al.	2018-01-11
Bipolar semiconductor device having a deep charge-balanced structure Grant 9,831,330 - Udrea , et al. November 28, 2	2017-11-28
Power Semiconductor Device with Charge Balance Design App 20170338302 - Hsieh; Alice Pei-Shan ; et al.	2017-11-23
IGBT having a deep superjunction structure Grant 9,799,725 - Udrea , et al. October 24, 2	2017-10-24
Bipolar Semiconductor Device Having Localized Enhancement Regions App 20170271445 - Udrea; Florin ; et al.	2017-09-21
Bipolar Semiconductor Device with Multi-Trench Enhancement Regions App 20170271488 - Udrea; Florin ; et al.	2017-09-21
Bipolar Semiconductor Device with Sub-Cathode Enhancement Regions App 20170271487 - Udrea; Florin ; et al.	2017-09-21
Bipolar semiconductor device having a charge-balanced inter-trench structure Grant 9,768,284 - Udrea , et al. September 19, 2	2017-09-19
IGBT having an inter-trench superjunction structure Grant 9,685,506 - Udrea , et al. June 20, 2	2017-06-20
Bipolar Semiconductor Device Having a Deep Charge-Balanced Structure App 20160260823 - Udrea; Florin ; et al.	2016-09-08
IGBT Having a Deep Superjunction Structure App 20160260825 - Udrea; Florin ; et al.	2016-09-08
IGBT Having an Inter-Trench Superjunction Structure App 20160260799 - Udrea; Florin ; et al.	2016-09-08
Bipolar Semiconductor Device Having a Charge-Balanced Inter-Trench Structure App 20160260824 - Udrea; Florin ; et al.	2016-09-08

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