Patent | Date |
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Semiconductor Device And Manufacturing Method Thereof App 20220238709 - LI; Kun-Mu ;   et al. | 2022-07-28 |
Contact structure for FinFET semiconductor device Grant 11,309,418 - Li , et al. April 19, 2 | 2022-04-19 |
Method for Increasing Germanium Concentration of Fin and Resulting Semiconductor Device App 20210273080 - Lin; Che-Yu ;   et al. | 2021-09-02 |
Fin field-effect transistor device and method of forming the same Grant 11,088,028 - Lin , et al. August 10, 2 | 2021-08-10 |
Fin Field-Effect Transistor Device and Method of Forming the Same App 20210159122 - Lin; Che-Yu ;   et al. | 2021-05-27 |
Method for increasing germanium concentration of FIN and resulting semiconductor device Grant 11,011,623 - Lin , et al. May 18, 2 | 2021-05-18 |
Semiconductor Structure With Blocking Layer App 20210119037 - LI; Kun-Mu ;   et al. | 2021-04-22 |
Semiconductor structure with blocking layer and method for forming the same Grant 10,868,181 - Li , et al. December 15, 2 | 2020-12-15 |
Source and drain epitaxy re-shaping Grant 10,727,131 - Li , et al. | 2020-07-28 |
Fin Field-effect Transistor Device And Method Of Forming The Same App 20200176319 - Lin; Che-Yu ;   et al. | 2020-06-04 |
Semiconductor Device and Method App 20200006530 - Lin; Che-Yu ;   et al. | 2020-01-02 |
Semiconductor Device And Manufacturing Method Thereof App 20190280115 - LI; Kun-Mu ;   et al. | 2019-09-12 |
Method of forming a contact structure for a FinFET semiconductor device Grant 10,297,690 - Li , et al. | 2019-05-21 |
Method of fabricating a semiconductor device structure Grant 10,269,648 - Li , et al. | 2019-04-23 |
Semiconductor Structure With Blocking Layer And Method For Forming The Same App 20190097006 - LI; Kun-Mu ;   et al. | 2019-03-28 |
Source And Drain Epitaxy Re-shaping App 20180366373 - LI; Kun-Mu ;   et al. | 2018-12-20 |
Semiconductor Device And Manufacturing Method Thereof App 20180190810 - LI; Kun-Mu ;   et al. | 2018-07-05 |
Semiconductor device Grant 9,735,271 - Hsiao , et al. August 15, 2 | 2017-08-15 |
Surface tension modification using silane with hydrophobic functional group for thin film deposition Grant 9,698,263 - Chong , et al. July 4, 2 | 2017-07-04 |
Semiconductor devices utilizing partially doped stressor film portions Grant 9,634,119 - Hsiao , et al. April 25, 2 | 2017-04-25 |
Semiconductor device and manufacturing method thereof Grant 9,543,387 - Chang , et al. January 10, 2 | 2017-01-10 |
Surface Tension Modification Using Silane With Hydrophobic Functional Group For Thin Film Deposition App 20160190320 - CHONG; Lai-Wan ;   et al. | 2016-06-30 |
Semiconductor Device App 20160181427 - HSIAO; Wen Chu ;   et al. | 2016-06-23 |
Semiconductor device Grant 9,324,863 - Hsiao , et al. April 26, 2 | 2016-04-26 |
Surface tension modification using silane with hydrophobic functional group for thin film deposition Grant 9,214,393 - Chong , et al. December 15, 2 | 2015-12-15 |
Semiconductor Devices Utilizing Partially Doped Stressor Film Portions App 20150311314 - Hsiao; Wen Chu ;   et al. | 2015-10-29 |
Semiconductor Device And Manufacturing Method Thereof App 20150255578 - CHANG; SHIH-CHIEH ;   et al. | 2015-09-10 |
Semiconductor devices utilizing partially doped stressor film portions and methods for forming the same Grant 9,064,892 - Hsiao , et al. June 23, 2 | 2015-06-23 |
Dual damascene metal gate Grant 8,927,406 - Wang , et al. January 6, 2 | 2015-01-06 |
Semiconductor device App 20140239416 - HSIAO; Wen Chu ;   et al. | 2014-08-28 |
Dual Damascene Metal Gate App 20140191299 - Wang; Chun-Chieh ;   et al. | 2014-07-10 |
Method of manufacturing semiconductor device Grant 8,735,255 - Hsiao , et al. May 27, 2 | 2014-05-27 |
Method Of Manufacturing Semiconductor Device App 20130295739 - HSIAO; Wen Chu ;   et al. | 2013-11-07 |
Surface Tension Modification Using Silane With Hydrophobic Functional Group For Thin Film Deposition App 20130256663 - CHONG; Lai Wan ;   et al. | 2013-10-03 |
Semiconductor Devices Utilizing Partially Doped Stressor Film Portions And Methods For Forming The Same App 20130049101 - HSIAO; Wen Chu ;   et al. | 2013-02-28 |
Method for using ammonium fluoride solution in a photoelectrochemical etching process of a silicon wafer Grant 6,852,643 - Lin , et al. February 8, 2 | 2005-02-08 |