Hsiao; Tung-Sheng

Patent Applications and Registrations

Patent applications and USPTO patent grants for Hsiao; Tung-Sheng.The latest application filed is for "method for forming a flat bottom electrode via (beva) top surface for memory".

Company Profile

5.5.7

Hsiao; Tung-Sheng - New Taipei City TW
Hsiao; Tung-Sheng - New Taipei TW

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method For Forming A Flat Bottom Electrode Via (beva) Top Surface For Memory App 20220093849 - Chen; Hsia-Wei ; et al.	2022-03-24
Method For Forming A Flat Bottom Electrode Via (beva) Top Surface For Memory App 20220085280 - Chen; Hsia-Wei ; et al.	2022-03-17
Method for forming a flat bottom electrode via (BEVA) top surface for memory Grant 11,201,281 - Chen , et al. December 14, 2	2021-12-14
Method For Forming A Flat Bottom Electrode Via (beva) Top Surface For Memory App 20200357981 - Chen; Hsia-Wei ; et al.	2020-11-12
Method for forming a flat bottom electrode via (BEVA) top surface for memory Grant 10,763,426 - Chen , et al. Sep	2020-09-01
Method for forming a flat bottom electrode via (BEVA) top surface for memory Grant 10,566,519 - Chen , et al. Feb	2020-02-18
Method For Forming A Flat Bottom Electrode Via (beva) Top Surface For Memory App 20190386204 - Chen; Hsia-Wei ; et al.	2019-12-19
Method For Forming A Flat Bottom Electrode Via (beva) Top Surface For Memory App 20190058109 - Chen; Hsia-Wei ; et al.	2019-02-21
Split-gate device and method of fabricating the same Grant 8,951,864 - Wang , et al. February 10, 2	2015-02-10
Split-gate Device And Method Of Fabricating The Same App 20130207174 - Wang; Yu-Hsiung ; et al.	2013-08-15

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