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Patent applications and USPTO patent grants for Hsiao; Po-Kai.The latest application filed is for "depositing and oxidizing silicon liner for forming isolation regions".
Patent | Date |
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Depositing and Oxidizing Silicon Liner for Forming Isolation Regions App 20220230908 - Hsiao; Po-Kai ;   et al. | 2022-07-21 |
Interface Trap Charge Density Reduction App 20210098305 - Yang; Szu-Chi ;   et al. | 2021-04-01 |
Fin field effect transistor and method for fabricating the same Grant 9,893,185 - Wu , et al. February 13, 2 | 2018-02-13 |
Fin Field Effect Transistor And Method For Fabricating The Same App 20170250282 - Wu; Cheng-Ta ;   et al. | 2017-08-31 |
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