loadpatents
name:-0.0095980167388916
name:-0.0030488967895508
name:-0.0061469078063965
Hsia; Benjamin I. Patent Filings

Hsia; Benjamin I.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Hsia; Benjamin I..The latest application filed is for "local metallization for semiconductor substrates using a laser beam".

Company Profile
7.2.10
  • Hsia; Benjamin I. - Fremont CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Local Metallization For Semiconductor Substrates Using A Laser Beam
App 20220271176 - Lu; Pei Hsuan ;   et al.
2022-08-25
Local metallization for semiconductor substrates using a laser beam
Grant 11,362,220 - Lu , et al. June 14, 2
2022-06-14
Laser Assisted Metallization Process For Solar Cell Fabrication
App 20220158001 - Lu; Pei Hsuan ;   et al.
2022-05-19
Laser assisted metallization process for solar cell fabrication
Grant 11,276,785 - Lu , et al. March 15, 2
2022-03-15
Strings Of Solar Cells Having Laser Assisted Metallization Conductive Contact Structures And Their Methods Of Manufacture
App 20210408313 - Lu; Pei Hsuan ;   et al.
2021-12-30
Solar Cell With Wraparound Finger
App 20200105951 - Reich; Matthieu Minault ;   et al.
2020-04-02
Local Metallization For Semiconductor Substrates Using A Laser Beam
App 20190312156 - Lu; Pei Hsuan ;   et al.
2019-10-10
Local Patterning And Metallization Of Semiconductor Structures Using A Laser Beam
App 20190312173 - Lu; Pei Hsuan ;   et al.
2019-10-10
Laser Assisted Metallization Process For Solar Cell Circuit Formation
App 20190312166 - Lu; Pei Hsuan ;   et al.
2019-10-10
Laser Assisted Metallization Process For Solar Cell Stringing
App 20190312163 - Lu; Pei Hsuan ;   et al.
2019-10-10
Laser Assisted Metallization Process For Solar Cell Fabrication
App 20190312157 - Lu; Pei Hsuan ;   et al.
2019-10-10
Systems For Laser Assisted Metallization Of Substrates
App 20190308270 - Lu; Pei Hsuan ;   et al.
2019-10-10

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