Hshieh; Fwu-Iuan

Patent Applications and Registrations

Patent applications and USPTO patent grants for Hshieh; Fwu-Iuan.The latest application filed is for "trench metal oxide semiconductor field effect transistor (mosfet) with low gate to drain coupled charges (qgd) structures".

Company Profile

0.123.85

Hshieh; Fwu-Iuan - Saratoga CA US
Hshieh; Fwu-Iuan - Santa Clara CA
Hshieh; Fwu-Iuan - Shanghai CN
Hshieh; Fwu-Iuan - US
Hshieh; Fwu-Iuan - San Jose CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Methods for manufacturing trench MOSFET with implanted drift region Grant 8,461,001 - Hshieh June 11, 2	2013-06-11
Trenched MOSFETS with improved gate-drain (GD) clamp diodes Grant 8,389,354 - Hshieh March 5, 2	2013-03-05
Trench MOSFET with double epitaxial structure Grant 8,159,021 - Hshieh April 17, 2	2012-04-17
Trench metal oxide semiconductor field effect transistor (MOSFET) with low gate to drain coupled charges (Qgd) structures App 20120083083 - Hshieh; Fwu-Iuan	2012-04-05
Trench mosfet with integrated schottky rectifier in same cell App 20120037983 - Hshieh; Fwu-Iuan	2012-02-16
Equal Potential Ring Structures of Power Semiconductor with Trenched Contact App 20120037954 - Hshieh; Fwu-Iuan	2012-02-16
Elimination of gate oxide weak spot in deep trench Grant 8,115,252 - Hshieh , et al. February 14, 2	2012-02-14
Insulated gate bipolar transistor (IGBT) with monolithic deep body clamp diode to prevent latch-up Grant 8,058,670 - Hshieh November 15, 2	2011-11-15
Trench metal oxide semiconductor field effect transistor (MOSFET) with low gate to drain coupled charges (Qgd) structures Grant 8,022,471 - Hshieh September 20, 2	2011-09-20
Tungsten plug drain extension Grant 7,977,745 - Hshieh July 12, 2	2011-07-12
Depletion mode trench MOSFET for improved efficiency of DC/DC converter applications Grant 7,929,321 - Hshieh April 19, 2	2011-04-19
Trench MOSFET with embedded junction barrier Schottky diode Grant 7,863,685 - Hshieh January 4, 2	2011-01-04
Insulated gate bipolar transistor (IGBT) with monolithic deep body clamp diode to prevent latch-up App 20100308370 - Hshieh; Fwu-Iuan	2010-12-09
Trenched MOSFET device with trenched contacts Grant 7,816,729 - Hshieh October 19, 2	2010-10-19
Trench MOSFET with cell layout, ruggedness, truncated corners Grant 7,812,409 - Hshieh October 12, 2	2010-10-12
Closed trench MOSFET with floating trench rings as termination Grant 7,800,185 - Hshieh September 21, 2	2010-09-21
Process for high voltage superjunction termination Grant 7,772,086 - Hshieh , et al. August 10, 2	2010-08-10
Trench insulated gate bipolar transistor (GBT) with improved emitter-base contacts and metal schemes App 20100193835 - Hshieh; Fwu-Iuan	2010-08-05
Process for high voltage superjunction termination Grant 7,759,204 - Hshieh , et al. July 20, 2	2010-07-20
Trench MOSFET with trench termination and manufacture thereof Grant 7,750,398 - Hshieh July 6, 2	2010-07-06
Trench metal oxide semiconductor field effect transistor (MOSFET) with low gate to drain coupled charges (Qgd) structures App 20100163975 - Hshieh; Fwu-Iuan	2010-07-01
Method of manufacturing a superjunction device with conventional terminations Grant 7,704,864 - Hshieh April 27, 2	2010-04-27
Methods for manufacturing trench MOSFET with implanted drift region App 20100087039 - Hshieh; Fwu-Iuan	2010-04-08
High density trench MOSFET with reduced on-resistance Grant 7,687,851 - Hshieh March 30, 2	2010-03-30
Depletion mode trench MOSFET for improved efficiency of DC/DC converter applications App 20100044796 - Hshieh; Fwu-Iuan	2010-02-25
Device configuration and method to manufacture trench MOSFET with solderable front metal Grant 7,646,058 - Hshieh January 12, 2	2010-01-12
Trench MOSFET with implanted drift region Grant 7,633,121 - Hshieh December 15, 2	2009-12-15
Trench MOSFET with terraced gate and manufacturing method thereof Grant 7,629,646 - Hshieh December 8, 2	2009-12-08
Trench MOSFET with embedded junction barrier Schottky diode App 20090294859 - Hshieh; Fwu-Iuan	2009-12-03
Process for high voltage superjunction termination Grant 7,622,787 - Hshieh , et al. November 24, 2	2009-11-24
High density hybrid MOSFET device Grant 7,592,650 - Hshieh September 22, 2	2009-09-22
Trenched mosfets with improved gate-drain (GD) clamp diodes App 20090219657 - Hshieh; Fwu-Iuan	2009-09-03
Trench mosfet with double epitaxial structure App 20090206395 - Hshieh; Fwu-Iuan	2009-08-20
Trench MOSFET with implanted drift region App 20090108338 - Hshieh; Fwu-Iuan	2009-04-30
Trench MOSFET with thick bottom oxide tub App 20090085107 - Hshieh; Fwu-Iuan	2009-04-02
Trenched MOSFETs with improved gate-drain (GD) clamp diodes Grant 7,511,357 - Hshieh March 31, 2	2009-03-31
Trench MOSFET with Trench Termination and manufacture thereof App 20090057756 - Hshieh; Fwu-Iuan	2009-03-05
Trench MOSFET with multiple P-bodies for ruggedness and on-resistance improvements App 20090026533 - Hshieh; Fwu-Iuan	2009-01-29
Tungsten Plug Drain Extension App 20080315327 - Hshieh; Fwu-Iuan	2008-12-25
Device configuration and method to manufacture trench mosfet with solderable front metal App 20080303081 - Hshieh; Fwu-Iuan	2008-12-11
Process For High Voltage Superjunction Termination App 20080290442 - Hshieh; Fwu-Iuan ; et al.	2008-11-27
Process For High Voltage Superjunction Termination App 20080283956 - Hshieh; Fwu-Iuan ; et al.	2008-11-20
Trenched MOSFETs with improved gate-drain (GD) clamp diodes App 20080258224 - Hshieh; Fwu-Iuan	2008-10-23
Tungsten plug drain extension Grant 7,439,583 - Hshieh October 21, 2	2008-10-21
Trenched mosfets with embedded schottky in the same cell App 20080246082 - Hshieh; Fwu-Iuan	2008-10-09
Method of manufacturing a superjunction device Grant 7,410,891 - Hshieh August 12, 2	2008-08-12
Closed trench MOSFET with floating trench rings as termination App 20080179662 - Hshieh; Fwu-Iuan	2008-07-31
Process For High Voltage Superjunction Termination App 20080164521 - Hshieh; Fwu-Iuan ; et al.	2008-07-10
Process For High Voltage Superjunction Termination App 20080166855 - Hshieh; Fwu-Iuan ; et al.	2008-07-10
Trench MOSFET with cell layout to improve ruggedness App 20080128829 - Hshieh; Fwu-Iuan	2008-06-05
Method for manufacturing a superjunction device with wide mesas Grant 7,364,994 - Hshieh , et al. April 29, 2	2008-04-29
Process for high voltage superjunction termination Grant 7,354,818 - Hshieh , et al. April 8, 2	2008-04-08
Trench Mosfet With Esd Trench Capacitor App 20080042208 - Hshieh; Fwu-Iuan	2008-02-21
Trench Mosfet With Copper Metal Connections App 20080042222 - Hshieh; Fwu-Iuan	2008-02-21
Trench Mosfet With Terraced Gate And Manufacturing Method Thereof App 20080042194 - Hshieh; FWU-IUAN	2008-02-21
Trenched MOSFET device with trenched contacts App 20080035988 - Hshieh; Fwu-Iuan	2008-02-14
Method of forming sub-100nm narrow trenches in semiconductor substrates App 20070238251 - Liau; Chu Yaw ; et al.	2007-10-11
Trenched MOSFETS with improved ESD protection capability App 20070176239 - Hshieh; Fwu-Iuan	2007-08-02
High density trench MOSFET with reduced on-resistance App 20070114599 - Hshieh; Fwu-Iuan	2007-05-24
Planarization method of manufacturing a superjunction device Grant 7,199,006 - Hshieh April 3, 2	2007-04-03
Trenched MOSFET termination with tungsten plug structures App 20070004116 - Hshieh; Fwu-Iuan	2007-01-04
Gate contact and runners for high density trench MOSFET App 20060273390 - Hshieh; Fwu-Iuan ; et al.	2006-12-07
High density trench MOSFET with low gate resistance and reduced source contact space App 20060273382 - Hshieh; Fwu-Iuan	2006-12-07
Trenched MOSFET device with contact trenches filled with tungsten plugs App 20060273385 - Hshieh; Fwu-Iuan	2006-12-07
High density hybrid MOSFET device App 20060273383 - Hshieh; Fwu-Iuan	2006-12-07
Structure for avalanche improvement of ultra high density trench MOSFET App 20060273384 - Hshieh; Fwu-Iuan	2006-12-07
Source contact and metal scheme for high density trench MOSFET App 20060273380 - Hshieh; Fwu-Iuan	2006-12-07
Elimination of gate oxide weak spot in deep trench App 20060255402 - Hshieh; Fwu-Iuan ; et al.	2006-11-16
Method Of Manufacturing A Superjunction Device App 20060252219 - HSHIEH; Fwu-Iuan	2006-11-09
Process for high voltage superjunction termination App 20060231915 - Hshieh; Fwu-Iuan ; et al.	2006-10-19
Tungsten plug drain extension App 20060226494 - Hshieh; Fwu-Iuan	2006-10-12
Method of manufacturing a superjunction device Grant 7,109,110 - Hshieh September 19, 2	2006-09-19
Method for Manufacturing a Superjunction Device With Wide Mesas App 20060205174 - Hshieh; Fwu-Iuan ; et al.	2006-09-14
Method of making a trench MOSFET device with improved on-resistance Grant 7,094,640 - Hshieh , et al. August 22, 2	2006-08-22
Method of manufacturing a superjunction device with conventional terminations App 20060160309 - Hshieh; Fwu-Iuan	2006-07-20
Method for manufacturing a superjunction device with wide mesas Grant 7,052,982 - Hshieh , et al. May 30, 2	2006-05-30
Trench DMOS device with improved drain contact Grant 7,049,194 - Hshieh , et al. May 23, 2	2006-05-23
Gate contacting scheme of a trench MOSFET structure Grant 7,049,668 - Hshieh May 23, 2	2006-05-23
Method of manufacturing a superjunction device with conventional terminations Grant 7,041,560 - Hshieh May 9, 2	2006-05-09
High voltage power mosfet having a voltage sustaining region that includes doped columns formed by trench etching using an etchant gas that is also a doping source Grant 7,019,360 - Blanchard , et al. March 28, 2	2006-03-28
Trench MOSFET device with polycrystalline silicon source contact structure Grant 7,015,125 - Hshieh , et al. March 21, 2	2006-03-21
Trench MOSFET having low gate charge Grant 6,979,621 - Hshieh , et al. December 27, 2	2005-12-27
Method of forming narrow trenches in semiconductor substrates Grant 6,977,203 - Hshieh , et al. December 20, 2	2005-12-20
Method for manufacturing a superjunction device with wide mesas App 20050181564 - Hshieh, Fwu-Iuan ; et al.	2005-08-18
Method of manufacturing a superjunction device with conventional terminations App 20050181558 - Hshieh, Fwu-Iuan	2005-08-18
Method of manufacturing a superjunction device App 20050181577 - Hshieh, Fwu-Iuan	2005-08-18
Planarization method of manufacturing a superjunction device App 20050176192 - Hshieh, Fwu-Iuan	2005-08-11
Trench DMOS transistor having a zener diode for protection from electro-static discharge Grant 6,884,683 - Hshieh , et al. April 26, 2	2005-04-26
Trench MOSFET device with polycrystalline silicon source contact structure App 20050062075 - Hshieh, Fwu-Iuan ; et al.	2005-03-24
High speed trench DMOS Grant 6,849,899 - Hshieh , et al. February 1, 2	2005-02-01
Symmetric trench MOSFET device and method of making same App 20040235250 - Hshieh, Fwu-Iuan ; et al.	2004-11-25
Trench MOSFET device with polycrystalline silicon source contact structure Grant 6,822,288 - Hshieh , et al. November 23, 2	2004-11-23
High voltage power mosfet having a voltage sustaining region that includes doped columns formed by trench etching using an etchant gas that is also a doping source App 20040164348 - Blanchard, Richard A. ; et al.	2004-08-26
Trench DMOS transistor having improved trench structure Grant 6,781,196 - So , et al. August 24, 2	2004-08-24
Symmetric trench MOSFET device and method of making same Grant 6,777,745 - Hshieh , et al. August 17, 2	2004-08-17
Trench schottky rectifier Grant 6,770,548 - Hshieh , et al. August 3, 2	2004-08-03
Trench DMOS transistor with embedded trench schottky rectifier Grant 6,762,098 - Hshieh , et al. July 13, 2	2004-07-13
Trench MOSFET device with improved on-resistance App 20040113203 - Hshieh, Fwu-Iuan ; et al.	2004-06-17
High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching using an etchant gas that is also a doping source Grant 6,750,104 - Blanchard , et al. June 15, 2	2004-06-15
Trench DMOS device with improved drain contact App 20040108554 - Hshieh, Fwu-Iuan ; et al.	2004-06-10
Two-mask trench schottky diode Grant 6,740,951 - Tsui , et al. May 25, 2	2004-05-25
Trench DMOS transistor having a zener diode for protection from electro-static discharge App 20040097042 - Hshieh, Fwu-Iuan ; et al.	2004-05-20
High speed trench DMOS App 20040072404 - Hshieh, Fwu-Iuan ; et al.	2004-04-15
Method of forming a trench MOSFET with structure having increased cell density and low gate charge Grant 6,713,352 - Hshieh , et al. March 30, 2	2004-03-30
Trench schottky rectifier Grant 6,707,127 - Hshieh , et al. March 16, 2	2004-03-16
Trench MOSFET having low gate charge Grant 6,674,124 - Hshieh , et al. January 6, 2	2004-01-06
Trench MOSFET device with improved on-resistance Grant 6,657,254 - Hshieh , et al. December 2, 2	2003-12-02
Trench DMOS transistor having a zener diode for protection from electro-static discharge Grant 6,657,256 - Hshieh , et al. December 2, 2	2003-12-02
Trench DMOS device with improved drain contact Grant 6,657,255 - Hshieh , et al. December 2, 2	2003-12-02
Method for forming trench MOSFET device with low parasitic resistance Grant 6,645,815 - Hshieh , et al. November 11, 2	2003-11-11
Trench DMOS transistor with embedded trench schottky rectifier App 20030207538 - Hshieh, Fwu-Iuan ; et al.	2003-11-06
Integrated circuit resistant to the formation of cracks in a passivation layer Grant 6,630,402 - Hshieh , et al. October 7, 2	2003-10-07
High speed trench DMOS Grant 6,627,951 - Hshieh , et al. September 30, 2	2003-09-30
Semiconductor trench device with enhanced gate oxide integrity structure Grant 6,620,691 - Hshieh , et al. September 16, 2	2003-09-16
Trench DMOS transistor with embedded trench schottky rectifier Grant 6,621,107 - Blanchard , et al. September 16, 2	2003-09-16
Trench DMOS transistor having improved trench structure App 20030168696 - So, Koon Chong ; et al.	2003-09-11
Trench DMOS transistor with embedded trench schottky rectifier Grant 6,593,620 - Hshieh , et al. July 15, 2	2003-07-15
High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching using an etchant gas that is also a doping source App 20030122189 - Blanchard, Richard A. ; et al.	2003-07-03
Trench MOSFET device with polycrystalline silicon source contact structure App 20030107080 - Hshieh, Fwu-Iuan ; et al.	2003-06-12
Method for forming trench MOSFET device with low parasitic resistance App 20030096480 - Hshieh, Fwu-Iuan ; et al.	2003-05-22
Method of forming narrow trenches in semiconductor substrates App 20030096479 - Hshieh, Fwu-Iuan ; et al.	2003-05-22
Integrated circuit resistant to the formation of cracks in a passivation layer App 20030096461 - Hshieh, Fwu-Iuan ; et al.	2003-05-22
Trench MOSFET device with improved on-resistance App 20030094624 - Hshieh, Fwu-Iuan ; et al.	2003-05-22
Trench MOSFET having low gate charge App 20030089946 - Hshieh, Fwu-Iuan ; et al.	2003-05-15
Trench DMOS device with improved drain contact App 20030080351 - Hshieh, Fwu-Iuan ; et al.	2003-05-01
DMOS transistor structure having improved performance Grant 6,548,860 - Hshieh , et al. April 15, 2	2003-04-15
Trench DMOS transistor having reduced punch-through Grant 6,545,315 - Hshieh , et al. April 8, 2	2003-04-08
Trench DMOS transistor with embedded trench schottky rectifier App 20030040144 - Blanchard, Richard A. ; et al.	2003-02-27
Trench DMOS transistor having a double gate structure Grant 6,518,127 - Hshieh , et al. February 11, 2	2003-02-11
Method of forming a trench schottky rectifier Grant 6,518,152 - Hshieh , et al. February 11, 2	2003-02-11
Trench DMOS transistor having reduced punch-through Grant 6,518,621 - Hshieh , et al. February 11, 2	2003-02-11
Symmetric trench MOSFET device and method of making same App 20020195655 - Hshieh, Fwu-Iuan ; et al.	2002-12-26
Trench schottky rectifier App 20020179993 - Hshieh, Fwu-Iuan ; et al.	2002-12-05
Two-mask trench schottky diode App 20020175342 - Tsui, Yan Man ; et al.	2002-11-28
Trench DMOS transistor having a zener diode for protection from electro-static discharge App 20020175367 - Hshieh, Fwu-Iuan ; et al.	2002-11-28
Devices and methods for addressing optical edge effects in connection with etched trenches Grant 6,475,884 - Hshieh , et al. November 5, 2	2002-11-05
Trench MOSFET with double-diffused body profile Grant 6,472,678 - Hshieh , et al. October 29, 2	2002-10-29
Trench MOSFET with structure having low gate charge Grant 6,472,708 - Hshieh , et al. October 29, 2	2002-10-29
Method of operation of punch-through field effect transistor Grant 6,444,527 - Floyd , et al. September 3, 2	2002-09-03
Switching speed improvement in DMO by implanting lightly doped region under gate Grant 6,426,260 - Hshieh July 30, 2	2002-07-30
Devices and methods for addressing optical edge effects in connection with etched trenches App 20020093048 - Hshieh, Fwu-Iuan ; et al.	2002-07-18
Trench Schottky Barrier Rectifier And Method Of Making The Same App 20020074613 - Hshieh, Fwu-Iuan ; et al.	2002-06-20
Trench schottky barrier rectifier and method of making the same App 20020074578 - Hshieh, Fwu-Iuan ; et al.	2002-06-20
Trench schottky rectifier App 20020066926 - Hshieh, Fwu-Iuan ; et al.	2002-06-06
Semiconductor trench device with enhanced gate oxide integrity structure App 20020061623 - Hshieh, Fwu-Iuan ; et al.	2002-05-23
Method Of Operation Of Punch-through Field Effect Transistor App 20020055232 - FLOYD, BRIAN H. ; et al.	2002-05-09
Method of forming a trench DMOS having reduced threshold voltage Grant 6,376,315 - Hshieh , et al. April 23, 2	2002-04-23
Mosfet Power Device Manufactured With Reduced Number Of Masks By Fabrication Simplified Processes App 20020030224 - HSHIEH, FWU-IUAN ; et al.	2002-03-14
Trench MOSFET with double-diffused body profile App 20020009854 - Hshieh, Fwu-Iuan ; et al.	2002-01-24
Devices and methods for addressing optical edge effects in connection with etched trenches App 20020008281 - Hshieh, Fwu-Iuan ; et al.	2002-01-24
Scalable Manufacture Process For Power Mosfet With Fully Self-aligned Shrinkable Gate And Drain App 20020000580 - OKASHITA, KOICHI ; et al.	2002-01-03
High speed trench DMOS App 20010031551 - Hshieh, Fwu-Iuan ; et al.	2001-10-18
Trench DMOS transistor having a double gate structure App 20010023961 - Hshieh, Fwu-Iuan ; et al.	2001-09-27
Power transistor cells provided with reliable trenched source contacts connected to narrower source manufactured without a source mask Grant 6,281,547 - So , et al. August 28, 2	2001-08-28
Trench DMOS transistor having reduced punch-through App 20010008788 - Hshieh, Fwu-Iuan ; et al.	2001-07-19
Double gate-oxide for reducing gate-drain capacitance in trenched DMOS with high-dopant concentration buried-region under trenched gate Grant 6,262,453 - Hshieh July 17, 2	2001-07-17
Trenched Dmos Device With Low Gate Charges App 20010003367 - HSHIEH, FWU-IUAN ; et al.	2001-06-14
Trenched DMOS device provided with body-dopant redistribution-compensation region for preventing punch through and adjusting threshold voltage Grant 6,172,398 - Hshieh January 9, 2	2001-01-09
Cost savings for manufacturing planar MOSFET devices achieved by implementing an improved device structure and fabrication process eliminating passivation layer and/or field plate Grant 6,104,060 - Hshieh , et al. August 15, 2	2000-08-15
Method of making punch-through field effect transistor Grant 6,069,043 - Floyd , et al. May 30, 2	2000-05-30
Method of forming a semiconductor structure with uniform threshold voltage and punch-through tolerance Grant 6,051,468 - Hshieh April 18, 2	2000-04-18
Semiconductor device fabrication with reduced masking steps Grant 6,046,078 - So , et al. April 4, 2	2000-04-04
Enhancing DMOS device ruggedness by reducing transistor parasitic resistance and by inducing breakdown near gate runners and termination area Grant 6,031,265 - Hshieh February 29, 2	2000-02-29
High speed MOSFET power device with enhanced ruggedness fabricated by simplified processes Grant 6,025,230 - Hshieh , et al. February 15, 2	2000-02-15
Semiconductor cell array with high packing density Grant 6,005,271 - Hshieh December 21, 1	1999-12-21
Punch-through prevention in trenched DMOS with poly-silicon layer covering trench corners Grant 5,986,304 - Hshieh , et al. November 16, 1	1999-11-16
Trench field effect transistor with reduced punch-through susceptibility and low R.sub.DSon Grant 5,981,344 - Hshieh , et al. November 9, 1	1999-11-09
DMOS transistors with diffusion merged body regions manufactured with reduced number of masks and enhanced ruggedness Grant 5,973,361 - Hshieh , et al. October 26, 1	1999-10-26
Power MOSFET fabrication process to achieve enhanced ruggedness, cost savings, and product reliability Grant 5,960,275 - So , et al. September 28, 1	1999-09-28
Method for device ruggedness improvement and on-resistance reduction for power MOSFET achieved by novel source contact structure Grant 5,930,630 - Hshieh , et al. July 27, 1	1999-07-27
High density trench DMOS transistor with trench bottom implant Grant 5,929,481 - Hshieh , et al. July 27, 1	1999-07-27
Power MOSFET device manufactured with simplified fabrication processes to achieve improved ruggedness and product cost savings Grant 5,923,065 - So , et al. July 13, 1	1999-07-13
Trenched field effect transistor with PN depletion barrier Grant 5,917,216 - Floyd , et al. June 29, 1	1999-06-29
Field effect Trench transistor having lightly doped epitaxial region on the surface portion thereof Grant 5,910,669 - Chang , et al. June 8, 1	1999-06-08
Method of forming a semiconductor structure having reduced threshold voltage and high punch-through tolerance Grant 5,907,776 - Hshieh , et al. May 25, 1	1999-05-25
Self-aligned and process-adjusted high density power transistor with gate sidewalls provided with punch through prevention and reduced JFET resistance Grant 5,907,169 - Hshieh , et al. May 25, 1	1999-05-25
MOSFET structure and fabrication process implemented by forming deep and narrow doping regions through doping trenches Grant 5,895,951 - So , et al. April 20, 1	1999-04-20
Cell density improvement in planar DMOS with farther-spaced body regions and novel gates Grant 5,894,150 - Hshieh April 13, 1	1999-04-13
Edge wrap-around protective extension for covering and protecting edges of thick oxide layer Grant 5,883,410 - So , et al. March 16, 1	1999-03-16
Mosfet termination design and core cell configuration to increase breakdown voltage and to improve device ruggedness Grant 5,877,529 - So , et al. March 2, 1	1999-03-02
Trenched DMOS transistor with lightly doped tub Grant 5,821,583 - Hshieh , et al. October 13, 1	1998-10-13
Surface mount and flip chip technology with diamond film passivation for total integated circuit isolation Grant 5,767,578 - Chang , et al. June 16, 1	1998-06-16
Cell topology for power transistors with increased packing density Grant 5,763,914 - Hshieh , et al. June 9, 1	1998-06-09
Surface mount and flip chip technology for total integrated circuit isolation Grant 5,757,081 - Chang , et al. May 26, 1	1998-05-26
Surface mount and flip chip technology for total integrated circuit isolation Grant 5,753,529 - Chang , et al. May 19, 1	1998-05-19
High density trenched DMOS transistor Grant 5,689,128 - Hshieh , et al. November 18, 1	1997-11-18
Trenched DMOS transistor fabrication having thick termination region oxide Grant 5,639,676 - Hshieh , et al. June 17, 1	1997-06-17
Trenched DMOS transistor with buried layer for reduced on-resistance and ruggedness Grant 5,629,543 - Hshieh , et al. May 13, 1	1997-05-13
Edge termination structure for power MOSFET Grant 5,614,751 - Yilmaz , et al. March 25, 1	1997-03-25
Method for making termination structure for power MOSFET Grant 5,597,765 - Yilmaz , et al. January 28, 1	1997-01-28
Punch-through field effect transistor Grant 5,592,005 - Floyd , et al. January 7, 1	1997-01-07
Contact probe utilizing conductive meltable probing material Grant 5,585,736 - Hshieh , et al. December 17, 1	1996-12-17
Trenched DMOS transistor having thick field oxide in termination region Grant 5,578,851 - Hshieh , et al. November 26, 1	1996-11-26
Trench field effect transistor with reduced punch-through susceptibility and low R.sub.DSon Grant 5,558,313 - Hshieh , et al. September 24, 1	1996-09-24
Method of making a field effect trench transistor having lightly doped epitaxial region on the surface portion thereof Grant 5,532,179 - Chang , et al. July 2, 1	1996-07-02
Structure of power mosfets, including termination structures Grant 5,521,409 - Hshieh , et al. May 28, 1	1996-05-28
Reliability test method for semiconductor trench devices Grant 5,486,772 - Hshieh , et al. January 23, 1	1996-01-23
Method for fabricating a short channel trenched DMOS transistor Grant 5,474,943 - Hshieh , et al. December 12, 1	1995-12-12
Trenched DMOS transistor with channel block at cell trench corners Grant 5,468,982 - Hshieh , et al. November 21, 1	1995-11-21
Low on-resistance power MOS technology Grant 5,429,964 - Yilmaz , et al. July 4, 1	1995-07-04
Structure and fabrication of power MOSFETs, including termination structures Grant 5,404,040 - Hshieh , et al. April 4, 1	1995-04-04
Short channel trenched DMOS transistor Grant 5,341,011 - Hshieh , et al. August 23, 1	1994-08-23
Trenched DMOS transistor fabrication using six masks Grant 5,316,959 - Kwan , et al. May 31, 1	1994-05-31
Low on-resistance power MOS technology Grant 5,304,831 - Yilmaz , et al. April 19, 1	1994-04-19
Method of fabricating a short-channel low voltage DMOS transistor Grant 4,931,408 - Hshieh June 5, 1	1990-06-05