loadpatents
name:-0.00051093101501465
name:-0.010632991790771
name:-0.00047898292541504
Howland, Jr.; William H. Patent Filings

Howland, Jr.; William H.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Howland, Jr.; William H..The latest application filed is for "in-situ wafer and probe desorption using closed loop heating".

Company Profile
0.10.0
  • Howland, Jr.; William H. - Wexford PA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
In-situ wafer and probe desorption using closed loop heating
Grant 7,304,490 - Howland, Jr. , et al. December 4, 2
2007-12-04
Method of measuring semiconductor wafers with an oxide enhanced probe
Grant 7,282,941 - Howland, Jr. October 16, 2
2007-10-16
Method of detecting un-annealed ion implants
Grant 7,250,313 - Howland, Jr. July 31, 2
2007-07-31
Method and apparatus for determining concentration of defects and/or impurities in a semiconductor wafer
Grant 7,190,186 - Howland, Jr. , et al. March 13, 2
2007-03-13
Semiconductor substrate surface preparation using high temperature convection heating
Grant 7,063,992 - Adams , et al. June 20, 2
2006-06-20
Method and apparatus for determining the dielectric constant of a low permittivity dielectric on a semiconductor wafer
Grant 7,026,837 - Howland, Jr. , et al. April 11, 2
2006-04-11
Work function controlled probe for measuring properties of a semiconductor wafer and method of use thereof
Grant 7,023,231 - Howland, Jr. , et al. April 4, 2
2006-04-04
Method and apparatus for removing and/or preventing surface contamination of a probe
Grant 7,007,408 - Howland, Jr. , et al. March 7, 2
2006-03-07
Apparatus and method for detecting soft breakdown of a dielectric layer of a semiconductor wafer
Grant 7,005,307 - Howland, Jr. , et al. February 28, 2
2006-02-28
Sample chuck with compound construction
Grant 6,803,780 - Adams , et al. October 12, 2
2004-10-12

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