Hower; Philip Leland

Patent Applications and Registrations

Patent applications and USPTO patent grants for Hower; Philip Leland.The latest application filed is for "high voltage lateral extended drain mos transistor with improved drift layer contact".

Company Profile

0.8.9

Hower; Philip Leland - Concord MA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
High voltage lateral extended drain MOS transistor with improved drift layer contact Grant 9,947,784 - Hower , et al. April 17, 2	2018-04-17
High voltage lateral DMOS transistor with optimized source-side blocking capability Grant 9,831,320 - Hower , et al. November 28, 2	2017-11-28
High voltage lateral DMOS transistor with optimized source-side blocking capability Grant 9,793,375 - Hower , et al. October 17, 2	2017-10-17
High Voltage Lateral Extended Drain Mos Transistor With Improved Drift Layer Contact App 20170084737 - HOWER; Philip Leland ; et al.	2017-03-23
High voltage lateral extended drain MOS transistor with improved drift layer contact Grant 9,543,149 - Hower , et al. January 10, 2	2017-01-10
High voltage depletion mode N-channel JFET Grant 9,508,869 - Hower , et al. November 29, 2	2016-11-29
High Voltage Lateral DMOS Transistor with Optimized Source-Side Blocking Capability App 20160163828 - Hower; Philip Leland ; et al.	2016-06-09
High Voltage Lateral DMOS Transistor with Optimized Source-Side Blocking Capability App 20160163855 - Hower; Philip Leland ; et al.	2016-06-09
High voltage lateral DMOS transistor with optimized source-side blocking capability Grant 9,299,832 - Hower , et al. March 29, 2	2016-03-29
High Voltage Depletion Mode N-channel Jfet App 20160043236 - HOWER; Philip Leland ; et al.	2016-02-11
High voltage depletion mode N-channel JFET Grant 9,202,692 - Hower , et al. December 1, 2	2015-12-01
High Voltage Depletion Mode N-channel Jfet App 20150179452 - HOWER; Philip Leland ; et al.	2015-06-25
High Voltage Lateral Extended Drain Mos Transistor With Improved Drift Layer Contact App 20150171213 - HOWER; Philip Leland ; et al.	2015-06-18
High Voltage Lateral Dmos Transistor With Optimized Source-side Blocking Capability App 20150171212 - HOWER; Philip Leland ; et al.	2015-06-18
Czochralski Substrates Having Reduced Oxygen Donors App 20150118861 - SUCHER; BRADLEY DAVID ; et al.	2015-04-30
Lateral insulated gate bipolar transistor Grant 8,278,683 - Kawahara , et al. October 2, 2	2012-10-02
Lateral Insulated Gate Bipolar Transistor App 20100032713 - KAWAHARA; Hideaki ; et al.	2010-02-11

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