HOSOYA; Takumi
Patent Applications and Registrations
Patent applications and USPTO patent grants for HOSOYA; Takumi.The latest application filed is for "wide bandgap wafer backside capped by a detection facilitating layer".
- HOSOYA; Takumi - Oota-shi JP
- Hosoya; Takumi - Ota JP
- HOSOYA; Takumi - Ota-shi JP
- Hosoya; Takumi - Isesaki JP
- HOSOYA; Takumi - Isesaki-shi JP
| Patent | Date |
|---|---|
| Wide Bandgap Wafer Backside Capped By A Detection Facilitating Layer App 20210407799 - YOSHIDA; Tetsuya ; et al. | 2021-12-30 |
| Power device with carrier lifetime zone Grant 11,145,644 - Hosoya , et al. October 12, 2 | 2021-10-12 |
| Power Device With Carrier Lifetime Zone App 20210050344 - HOSOYA; Takumi ; et al. | 2021-02-18 |
| Insulated gate bipolar transistor (IGBT) and related methods Grant 9,953,971 - Hosoya April 24, 2 | 2018-04-24 |
| Insulated Gate Bipolar Transistor (igbt) And Related Methods App 20170221881 - HOSOYA; Takumi | 2017-08-03 |
| Insulated gate bipolar transistor (IGBT) and related methods Grant 9,634,129 - Hosoya April 25, 2 | 2017-04-25 |
| Insulated Gate Bipolar Transistor (igbt) And Related Methods App 20160359025 - HOSOYA; Takumi | 2016-12-08 |
| Method of manufacturing semiconductor device Grant 8,017,482 - Matsui , et al. September 13, 2 | 2011-09-13 |
| Method Of Manufacturing Semiconductor Device App 20110159651 - MATSUI; TOSHIKAZU ; et al. | 2011-06-30 |
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