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Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating film Grant 7,691,713 - Tanaka , et al. April 6, 2 | 2010-04-06 |
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Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating film Grant 7,244,655 - Tanaka , et al. July 17, 2 | 2007-07-17 |
Semiconductor Device And Manufacturing Method Therefor App 20070138574 - EIKYU; Katsumi ;   et al. | 2007-06-21 |
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Semiconductor Device And Method Of Manufacturing Semiconductor Device App 20060214212 - HORITA; Katsuyuki ;   et al. | 2006-09-28 |
Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating film App 20060079061 - Tanaka; Yoshinori ;   et al. | 2006-04-13 |
Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating film Grant 6,998,319 - Tanaka , et al. February 14, 2 | 2006-02-14 |
Semiconductor device and manufacturing method thereof App 20060027883 - Kuroi; Takashi ;   et al. | 2006-02-09 |
Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrate Grant 6,890,837 - Kuroi , et al. May 10, 2 | 2005-05-10 |
Semiconductor device including impurity layer having continuous portions formed at different depths and method of manufacturing the same Grant 6,841,440 - Kuroi , et al. January 11, 2 | 2005-01-11 |
Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating film App 20040235255 - Tanaka, Yoshinori ;   et al. | 2004-11-25 |
Semiconductor device having vertical transistor App 20040159857 - Horita, Katsuyuki ;   et al. | 2004-08-19 |
Semiconductor device Grant 6,777,758 - Yamashita , et al. August 17, 2 | 2004-08-17 |
Semiconductor device having high impurity concentration region and low impurity concentration region in side surface of active region App 20040124491 - Yamashita, Tomohiro ;   et al. | 2004-07-01 |
Semiconductor device with element isolation using impurity-doped insulator and oxynitride film Grant 6,744,113 - Kuroi , et al. June 1, 2 | 2004-06-01 |
Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrate Grant 6,737,315 - Kuroi , et al. May 18, 2 | 2004-05-18 |
Semiconductor device and manufacturing method thereof App 20040092057 - Kuroi, Takashi ;   et al. | 2004-05-13 |
Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrate App 20040082165 - Kuroi, Takashi ;   et al. | 2004-04-29 |
Semiconductor device with element isolation using impurity-doped insulator and oxynitride film App 20040053458 - Kuroi, Takashi ;   et al. | 2004-03-18 |
Semiconductor device and manufacturing method thereof Grant 6,707,099 - Shiozawa , et al. March 16, 2 | 2004-03-16 |
Semiconductor device including inversely tapered gate electrode and manufacturing method thereof Grant 6,661,066 - Kuroi , et al. December 9, 2 | 2003-12-09 |
Semiconductor device having dual-gate structure and method of manufacturing the same App 20030151098 - Nishida, Yukio ;   et al. | 2003-08-14 |
Semiconductor device including impurity layer having continuous portions formed at different depths and method of manufacturing the same App 20030143810 - Kuroi, Takashi ;   et al. | 2003-07-31 |
Semiconductor device and manufacturing method thereof App 20030127685 - Shiozawa, Katsuomi ;   et al. | 2003-07-10 |
Semiconductor Device Achieving Reduced Wiring Length And Reduced Wiring Delay By Forming First Layer Wiring And Gate Upper Electrode In Same Wire Layer App 20030075744 - Horita, Katsuyuki ;   et al. | 2003-04-24 |
Semiconductor device including impurity layer having continuous portions formed at different depths and method of manufacturing the same Grant 6,541,825 - Kuroi , et al. April 1, 2 | 2003-04-01 |
Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrate App 20030054597 - Kuroi, Takashi ;   et al. | 2003-03-20 |
Method of manufacturing semiconductor device Grant 6,503,799 - Horita , et al. January 7, 2 | 2003-01-07 |
Method Of Manufacturing Semiconductor Device App 20020151143 - Shiozawa, Katsuomi ;   et al. | 2002-10-17 |
Method of manufacturing semiconductor device App 20020127841 - Horita, Katsuyuki ;   et al. | 2002-09-12 |
Semiconductor device and method of manufacturing the same App 20020038901 - Kuroi, Takashi ;   et al. | 2002-04-04 |
Semiconductor device and method of manufacturing same App 20020028568 - Ueno, Shuuichi ;   et al. | 2002-03-07 |
Semiconductor device and method of manufacturing same App 20020020867 - Shiozawa, Katsuomi ;   et al. | 2002-02-21 |
Semiconductor device App 20020008224 - Yamashita, Tomohiro ;   et al. | 2002-01-24 |
Semiconductor Device Including Inversely Tapered Gate Electrode And Manufacturing Method Thereof App 20020008293 - KUROI, TAKASHI ;   et al. | 2002-01-24 |
Semiconductor device and method for manufacturing same App 20020005529 - Horita, Katsuyuki ;   et al. | 2002-01-17 |
Method of manufacturing a semiconductor device Grant 6,323,102 - Horita , et al. November 27, 2 | 2001-11-27 |
Method for manufacturing an isolation trench having plural profile angles Grant 6,274,457 - Sakai , et al. August 14, 2 | 2001-08-14 |
Method of forming a trench type element isolation in semiconductor substrate Grant 6,268,263 - Sakai , et al. July 31, 2 | 2001-07-31 |
Semiconductor device and method of manufacturing the same Grant 6,218,262 - Kuroi , et al. April 17, 2 | 2001-04-17 |
Semiconductor device and manufacturing method thereof Grant 6,127,737 - Kuroi , et al. October 3, 2 | 2000-10-03 |
Semiconductor device and method of fabricating thereof Grant 6,017,800 - Sayama , et al. January 25, 2 | 2000-01-25 |
Semiconductor device and method of manufacturing the same Grant 5,889,335 - Kuroi , et al. March 30, 1 | 1999-03-30 |