Horikoshi; Yoshiji
Patent Applications and Registrations
Patent applications and USPTO patent grants for Horikoshi; Yoshiji.The latest application filed is for "semiconductor devices with at least one monoatomic layer of doping atoms".
- Horikoshi; Yoshiji - Tokyo JP
- Horikoshi; Yoshiji - Akishima JP
- Horikoshi; Yoshiji - Stuttgart DE
| Patent | Date |
|---|---|
| Semiconductor devices with at least one monoatomic layer of doping atoms Grant 4,882,609 - Schubert , et al. November 21, 1 | 1989-11-21 |
| Method for forming thin films of compound semiconductors by flow rate modulation epitaxy Grant 4,829,022 - Kobayashi , et al. May 9, 1 | 1989-05-09 |
| Semiconductor device for detecting electromagnetic radiation or particles Grant 4,775,881 - Ploog , et al. October 4, 1 | 1988-10-04 |
| Preparation process of compound semiconductor Grant 4,767,494 - Kobayashi , et al. August 30, 1 | 1988-08-30 |
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