| Patent | Date |
|---|
Semiconductor memory device for dynamically storing data with channel body of transistor used as storage node
Grant 7,075,820 - Yamada , et al. July 11, 2 | 2006-07-11 |
Semiconductor device and method for manufacturing the same
Grant 7,042,040 - Horiguchi May 9, 2 | 2006-05-09 |
Multi-value magnetic random access memory with stacked tunnel magnetoresistance (TMR) elements
Grant 7,042,753 - Horiguchi May 9, 2 | 2006-05-09 |
Semiconductor memory device for dynamically storing data with channel body of transistor used as storage node
App 20050141262 - Yamada, Takashi ; et al. | 2005-06-30 |
Dynamic semiconductor memory device
Grant 6,891,225 - Horiguchi , et al. May 10, 2 | 2005-05-10 |
Semiconductor device and method for manufacturing the same
App 20040150028 - Horiguchi, Fumio | 2004-08-05 |
Semiconductor memory device
Grant 6,548,848 - Horiguchi , et al. April 15, 2 | 2003-04-15 |
Magnetic random access memory
App 20020149962 - Horiguchi, Fumio | 2002-10-17 |
Semiconductor memory device
App 20020130341 - Horiguchi, Fumio ; et al. | 2002-09-19 |
Semiconductor memory device and its manufacturing method
App 20020034855 - Horiguchi, Fumio ; et al. | 2002-03-21 |
Semiconductor device and method for manufacturing the same
App 20020030214 - Horiguchi, Fumio | 2002-03-14 |
MOS random access memory having array of trench type one-capacitor/one-transistor memory cells
Grant 5,731,609 - Hamamoto , et al. March 24, 1 | 1998-03-24 |
Semiconductor memory with insulation film embedded in groove formed on substrate
Grant 5,561,311 - Hamamoto , et al. October 1, 1 | 1996-10-01 |
MOS random access memory having array of trench type one-capacitor/one-transistor memory cells
Grant 5,477,071 - Hamamoto , et al. December 19, 1 | 1995-12-19 |
Semiconductor device and process for manufacturing the same
Grant 5,371,024 - Hieda , et al. December 6, 1 | 1994-12-06 |
Dynamic semiconductor memory device having high integration density
Grant 5,363,325 - Sunouchi , et al. November 8, 1 | 1994-11-08 |
Method of making dynamic random access semiconductor memory device
Grant 5,350,708 - Yagishita , et al. September 27, 1 | 1994-09-27 |
MOS-type semiconductor integrated circuit device
Grant 5,258,635 - Nitayama , et al. November 2, 1 | 1993-11-02 |
Semiconductor memory with pad electrode and bit line under stacked capacitor
Grant 5,235,199 - Hamamoto , et al. August 10, 1 | 1993-08-10 |
Method of manufacturing a semiconductor device
Grant 5,227,319 - Ogura , et al. July 13, 1 | 1993-07-13 |
Method of making trench type dynamic random access memory device
Grant 5,106,774 - Hieda , et al. April 21, 1 | 1992-04-21 |
MOS type dynamic random access memory
Grant 5,049,957 - Inoue , et al. September 17, 1 | 1991-09-17 |
Process for manufacturing a DRAM cell
Grant 5,043,298 - Yamada , et al. August 27, 1 | 1991-08-27 |
MOS transistor
Grant 4,979,014 - Hieda , et al. December 18, 1 | 1990-12-18 |
Semiconductor device
Grant 4,831,433 - Oguara , et al. May 16, 1 | 1989-05-16 |
Semiconductor memory system with dynamic random access memory cells
Grant 4,800,530 - Itoh , et al. January 24, 1 | 1989-01-24 |
High-density semiconductor memory device with charge-coupling memory cells
Grant 4,641,280 - Horiguchi February 3, 1 | 1987-02-03 |
Semiconductor memory device with a refresh mechanism
Grant 4,628,488 - Saku , et al. December 9, 1 | 1986-12-09 |
Method for manufacturing a semiconductor device
Grant 4,505,025 - Kurosawa , et al. March 19, 1 | 1985-03-19 |
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