loadpatents
name:-0.010120868682861
name:-0.0078680515289307
name:-0.00058722496032715
Hooker; Jacob Christopher Patent Filings

Hooker; Jacob Christopher

Patent Applications and Registrations

Patent applications and USPTO patent grants for Hooker; Jacob Christopher.The latest application filed is for "single metal dual dielectric cmos device".

Company Profile
0.7.7
  • Hooker; Jacob Christopher - Hamburg N/A DE
  • Hooker; Jacob Christopher - Leuven BE
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Single metal dual dielectric CMOS device
Grant 8,766,370 - Hooker , et al. July 1, 2
2014-07-01
Single Metal Dual Dielectric Cmos Device
App 20110095376 - Hooker; Jacob Christopher ;   et al.
2011-04-28
Method of manufacturing a semiconductor device
Grant 7,429,513 - Van Duuren , et al. September 30, 2
2008-09-30
Method of manufacturing MOS transistors with gate electrodes formed in a packet of metal layers deposited upon one another
Grant 7,326,631 - Lander , et al. February 5, 2
2008-02-05
Semiconductor device fabricated by a method of reducing the contact resistance of the connection regions
Grant 7,320,939 - Lander , et al. January 22, 2
2008-01-22
Semiconductor Devices Having Silicided Electrodes
App 20070215951 - Schram; Tom ;   et al.
2007-09-20
Method for fabricating semiconductor devices having silicided electrodes
Grant 7,226,827 - Schram , et al. June 5, 2
2007-06-05
Method for reducing the contact resistance of the connection regions of a semiconductor device
Grant 7,189,648 - Lander , et al. March 13, 2
2007-03-13
Semiconductor device fabricated by a method of reducing the contact resistance of the connection regions
App 20070020930 - Lander; Robert ;   et al.
2007-01-25
Method of manufacturing a semiconductor device and semiconductor device obatined with such a method
App 20060152086 - Venezia; Vincent Charles ;   et al.
2006-07-13
Method of manufacturing a semiconductor device with mos transistors comprising gate electrodes formed in a packet of metal layers deposited upon one another
App 20060134848 - Lander; Robert James Pascde ;   et al.
2006-06-22
Method for fabricating semiconductor devices having silicided electrodes
App 20050145943 - Schram, Tom ;   et al.
2005-07-07
Method for reducing the contact resistance of the connection regions of a semiconductor device
App 20050112875 - Lander, Robert ;   et al.
2005-05-26

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