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name:-0.0097851753234863
name:-0.0097830295562744
name:-0.0005640983581543
Honma; Ryoichi Patent Filings

Honma; Ryoichi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Honma; Ryoichi.The latest application filed is for "method of making three-dimensional semiconductor memory device having uniform thickness semiconductor channel".

Company Profile
0.11.10
  • Honma; Ryoichi - Yokkaichi JP
  • Honma; Ryoichi - Tokkaichi JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Method of making three-dimensional semiconductor memory device having laterally undulating memory films
Grant 9,978,768 - Xu , et al. May 22, 2
2018-05-22
Method Of Making Three-dimensional Semiconductor Memory Device Having Uniform Thickness Semiconductor Channel
App 20180006041 - XU; Jiyin ;   et al.
2018-01-04
Honeycomb cell structure three-dimensional non-volatile memory device
Grant 9,812,461 - Doda , et al. November 7, 2
2017-11-07
Three dimensional memory device having well contact pillar and method of making thereof
Grant 9,768,186 - Shimabukuro , et al. September 19, 2
2017-09-19
Passive devices for integration with three-dimensional memory devices
Grant 9,646,981 - Nishikawa , et al. May 9, 2
2017-05-09
Blocking oxide in memory opening integration scheme for three-dimensional memory structure
Grant 9,601,508 - Sel , et al. March 21, 2
2017-03-21
Passive devices for integration with three-dimensional memory devices
Grant 9,589,981 - Nishikawa , et al. March 7, 2
2017-03-07
Method of making a monolithic three dimensional NAND string using a select gate etch stop layer
Grant 9,548,313 - Yada , et al. January 17, 2
2017-01-17
Metallic etch stop layer in a three-dimensional memory structure
Grant 9,530,788 - Oginoe , et al. December 27, 2
2016-12-27
Batch contacts for multiple electrically conductive layers
Grant 9,530,787 - Tsutsumi , et al. December 27, 2
2016-12-27
Passive Devices For Integration With Three-dimensional Memory Devices
App 20160365352 - NISHIKAWA; Masatoshi ;   et al.
2016-12-15
Passive Devices For Integration With Three-dimensional Memory Devices
App 20160365351 - NISHIKAWA; Masatoshi ;   et al.
2016-12-15
Three Dimensional Memory Device Having Well Contact Pillar And Method Of Making Thereof
App 20160329341 - Shimabukuro; Seiji ;   et al.
2016-11-10
Self-aligned integrated line and via structure for a three-dimensional semiconductor device
Grant 9,484,296 - Takahashi , et al. November 1, 2
2016-11-01
Blocking Oxide In Memory Opening Integration Scheme For Three-dimensional Memory Structure
App 20160315095 - Sel; Jongsun ;   et al.
2016-10-27
Metallic Etch Stop Layer In A Three-dimensional Memory Structure
App 20160276359 - OGINOE; Tomohiro ;   et al.
2016-09-22
Honeycomb Cell Structure Three-dimensional Non-volatile Memory Device
App 20160276360 - DODA; Yasushi ;   et al.
2016-09-22
Self-aligned Integrated Line And Via Structure For A Three-dimensional Semiconductor Device
App 20160240476 - TAKAHASHI; Akihide ;   et al.
2016-08-18
Three dimensional memory device having well contact pillar and method of making thereof
Grant 9,412,749 - Shimabukuro , et al. August 9, 2
2016-08-09
Batch Contacts For Multiple Electrically Conductive Layers
App 20160111438 - TSUTSUMI; Masanori ;   et al.
2016-04-21
Method Of Making A Monolithic Three Dimensional Nand String Using A Select Gate Etch Stop Layer
App 20150348984 - YADA; Shinsuke ;   et al.
2015-12-03

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