Honjou; Hiroaki

Patent Applications and Registrations

Patent applications and USPTO patent grants for Honjou; Hiroaki.The latest application filed is for "magnetic-domain-wall-displacement memory cell and initializing method therefor".

Company Profile

0.11.9

Honjou; Hiroaki - Tokyo JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Magnetic-domain-wall-displacement memory cell and initializing method therefor Grant 9,478,309 - Nebashi , et al. October 25, 2	2016-10-25
Semiconductor device Grant 9,406,869 - Honjou , et al. August 2, 2	2016-08-02
Magnetic-domain-wall-displacement Memory Cell And Initializing Method Therefor App 20150248939 - Nebashi; Ryusuke ; et al.	2015-09-03
Semiconductor Device And Method For Manufacturing Same App 20150200354 - Honjou; Hiroaki ; et al.	2015-07-16
Magnetoresistive effect element, and magnetic random access memory Grant 8,908,423 - Honjou December 9, 2	2014-12-09
Magnetic Memory App 20130075847 - Honjou; Hiroaki	2013-03-28
Magnetoresistive Effect Element, And Magnetic Random Access Memory App 20120281463 - Honjou; Hiroaki	2012-11-08
Magnetic random access memory and method of manufacturing the same Grant 8,300,456 - Honjou , et al. October 30, 2	2012-10-30
Magnetic Random Access Memory And Method Of Manufacturing The Same App 20100046288 - Honjou; Hiroaki ; et al.	2010-02-25
Magnetoresistive effect transducer having longitudinal bias layer and control layer directly connected to free layer Grant 7,372,673 - Hayashi , et al. May 13, 2	2008-05-13
Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer App 20050219772 - Hayashi, Kazuhiko ; et al.	2005-10-06
Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer Grant 6,950,290 - Hayashi , et al. September 27, 2	2005-09-27
Magnetoresistive effect element having a ferromagnetic tunnel junction film with an oxide or nitride of a metallic material Grant 6,798,626 - Hayashi , et al. September 28, 2	2004-09-28
Magnetic head with a tunnel junction including metallic material sandwiched between one of an oxide and a nitride of the metallic material Grant 6,624,987 - Hayashi , et al. September 23, 2	2003-09-23
Magnetoresistive effect element, magneto-resistive effect head, method for manufacturing the same and magnetic recording apparatus using the same App 20030151859 - Hayashi, Kazuhiko ; et al.	2003-08-14
Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer Grant 6,542,342 - Hayashi , et al. April 1, 2	2003-04-01
Magnetoresistive Head Having Ferromagnetic Tunnel Junction Film With A Smaller Resistance At A Terminal Portion Than A Central Portion, Magnetic Resistance Detection System With The Magnetoresistive Head And A Magnetic Storage System Using It Grant 6,538,861 - Hayashi , et al. March 25, 2	2003-03-25
Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer App 20030035256 - Hayashi, Kazuhiko ; et al.	2003-02-20

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