Hong; Samphy
Patent Applications and Registrations
Patent applications and USPTO patent grants for Hong; Samphy.The latest application filed is for "ion implantation to control formation of mosfet trench-bottom oxide".
- Hong; Samphy - Saratoga Springs NY
- Hong; Samphy - Gloucester MA
| Patent | Date |
|---|---|
| Split-gate MOSFET with gate shield Grant 11,437,488 - Zhang , et al. September 6, 2 | 2022-09-06 |
| Ion Implantation To Control Formation Of Mosfet Trench-bottom Oxide App 20220278221 - Zhang; Qintao ; et al. | 2022-09-01 |
| Methods For Forming Planar Metal-oxide-semiconductor Field-effect Transistors App 20220238674 - ZHANG; Qintao ; et al. | 2022-07-28 |
| Methods for forming planar metal-oxide-semiconductor field-effect transistors Grant 11,387,338 - Zhang , et al. July 12, 2 | 2022-07-12 |
| Implantation Enabled Precisely Controlled Source And Drain Etch Depth App 20220199802 - Zhang; Qintao ; et al. | 2022-06-23 |
| Ion Implantation To Form Trench-bottom Oxide Of Mosfet App 20220199806 - Zhang; Qintao ; et al. | 2022-06-23 |
| Split-gate Mosfet With Gate Shield App 20220165863 - Zhang; Qintao ; et al. | 2022-05-26 |
| Method For Increasing Photoresist Etch Selectivity To Enable High Energy Hot Implant In Sic Devices App 20220044939 - Zhang; Qintao ; et al. | 2022-02-10 |
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