| Patent | Date |
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Closed-loop distributed messaging system and method
App 20140114725 - Tryfon; Jason ; et al. | 2014-04-24 |
Closed-loop Distributed Messaging System And Method
App 20140046728 - Tryfon; Jason ; et al. | 2014-02-13 |
Method for operating a non-volatile memory
Grant 6,757,198 - Huang , et al. June 29, 2 | 2004-06-29 |
Method for measuring an effective channel length of a MOSFET
Grant 6,750,673 - Huang , et al. June 15, 2 | 2004-06-15 |
Method for forming a cantilever beam model micro-electromechanical system
Grant 6,720,267 - Chen , et al. April 13, 2 | 2004-04-13 |
Method for operating a non-volatile memory
App 20030142548 - Huang, Chih-Jen ; et al. | 2003-07-31 |
Method for operating a non-volatile memory
App 20030107921 - Huang, Chih-Jen ; et al. | 2003-06-12 |
Method of forming shallow trench isolation
App 20020182824 - Lin, Ying-Jen ; et al. | 2002-12-05 |
Method for measuring effective gate channel length during C-V method
App 20020102752 - Huang, Heng-Seng ; et al. | 2002-08-01 |
Method of manufacturing inductor
App 20020066175 - Huang, Heng-sheng ; et al. | 2002-06-06 |
Vertical two-transistor flash memory
Grant 6,396,745 - Hong , et al. May 28, 2 | 2002-05-28 |
Method for forming a self-aligned silicide layer
Grant 6,350,677 - Ko , et al. February 26, 2 | 2002-02-26 |
Self-aligned Metal Silicide
App 20020011631 - HONG, GARY | 2002-01-31 |
Method For Fabricating A Hybrid Isolation Structure
App 20010023107 - HONG, GARY ; et al. | 2001-09-20 |
Method of fabricating conductive line structure
Grant 6,274,477 - Hong August 14, 2 | 2001-08-14 |
Method for manufacturing shallow trench isolation structure including a dual trench
Grant 6,232,202 - Hong May 15, 2 | 2001-05-15 |
Method of stabilizing anti-reflection coating layer
Grant 6,225,219 - Lee , et al. May 1, 2 | 2001-05-01 |
Method of fabricating an ETOX flash memory
Grant 6,211,012 - Lee , et al. April 3, 2 | 2001-04-03 |
Method of fabricating flash memory
Grant 6,153,471 - Lee , et al. November 28, 2 | 2000-11-28 |
Shallow trench isolation for semiconductor devices
Grant 6,069,058 - Hong May 30, 2 | 2000-05-30 |
Method for manufacturing dram capacitor incorporating liquid phase deposition
Grant 6,060,366 - Hong May 9, 2 | 2000-05-09 |
Method of manufacturing flash memory
Grant 6,048,768 - Ding , et al. April 11, 2 | 2000-04-11 |
Method of making high density mask ROM having a two level bit line
Grant 6,037,227 - Hong March 14, 2 | 2000-03-14 |
Method of fabricating capacitor
Grant 6,037,234 - Hong , et al. March 14, 2 | 2000-03-14 |
Method for forming shallow trench isolation structure
Grant 6,001,707 - Lin , et al. December 14, 1 | 1999-12-14 |
ROM device having shaped gate electrodes and corresponding code implants
Grant 5,994,745 - Hong November 30, 1 | 1999-11-30 |
Process for DRAM capacitor formation
Grant 5,976,977 - Hong November 2, 1 | 1999-11-02 |
Method of manufacturing a flash memory cell having a tunnel oxide with a long narrow top profile
Grant 5,972,752 - Hong October 26, 1 | 1999-10-26 |
Method of nitride-sealed oxide-buffered local oxidation of silicon
Grant 5,970,364 - Huang , et al. October 19, 1 | 1999-10-19 |
Flash memory having separate data programming and erasing terminals
Grant 5,969,384 - Hong October 19, 1 | 1999-10-19 |
DRAM process with a multilayer stack structure
Grant 5,966,600 - Hong October 12, 1 | 1999-10-12 |
Method of fabricating electrostatic discharge protection device
Grant 5,960,288 - Hong , et al. September 28, 1 | 1999-09-28 |
Method for manufacturing DRAM capacitor
Grant 5,952,039 - Hong September 14, 1 | 1999-09-14 |
Flash memory cell structure having electrically isolated stacked gate
Grant 5,932,910 - Hong August 3, 1 | 1999-08-03 |
DRAM process
Grant 5,902,124 - Hong May 11, 1 | 1999-05-11 |
Sub-micron MOSFET
Grant 5,899,719 - Hong May 4, 1 | 1999-05-04 |
Method of fabricating a flash memory
Grant 5,869,369 - Hong February 9, 1 | 1999-02-09 |
Planar field oxide isolation process for semiconductor integrated circuit devices using liquid phase deposition
Grant 5,849,625 - Hsue , et al. December 15, 1 | 1998-12-15 |
Deep submicron MOSFET device
Grant 5,843,826 - Hong December 1, 1 | 1998-12-01 |
Method of fabricating metal contact of ultra-large-scale integration metal-oxide semiconductor field effect transistor with silicon-on-insulator structure
Grant 5,726,081 - Lin , et al. March 10, 1 | 1998-03-10 |
High density flash EPROM
Grant 5,721,442 - Hong February 24, 1 | 1998-02-24 |
Method of fabricating a stacked capacitor for a DRAM cell by plasma etching
Grant 5,721,152 - Jenq , et al. February 24, 1 | 1998-02-24 |
Process for fabricating a stacked capacitor
Grant 5,716,884 - Hsue , et al. February 10, 1 | 1998-02-10 |
Method of forming isolation regions in a MOS transistor device
Grant 5,674,760 - Hong October 7, 1 | 1997-10-07 |
Method of forming bit lines having lower conductivity in their respective edges
Grant 5,672,532 - Hsue , et al. September 30, 1 | 1997-09-30 |
Process for creating high density integrated circuits utilizing double coating photoresist mask
Grant 5,667,940 - Hsue , et al. September 16, 1 | 1997-09-16 |
Method for fabricating trench/stacked capacitors on DRAM cells with increased capacitance
Grant 5,665,624 - Hong September 9, 1 | 1997-09-09 |
Mask ROM process with self-aligned ROM code implant
Grant 5,661,326 - Hong August 26, 1 | 1997-08-26 |
Method of bonding an aluminum wire to an intergrated circuit bond pad
Grant 5,661,081 - Hsue , et al. August 26, 1 | 1997-08-26 |
Process for fabricating non-volatile memory cells having improved voltage coupling ratio by utilizing liquid phase
Grant 5,646,059 - Sheu , et al. July 8, 1 | 1997-07-08 |
High-density programmable read-only memory and the process for its fabrication
Grant 5,643,816 - Hsu , et al. July 1, 1 | 1997-07-01 |
High performance field effect transistor with lai region
Grant 5,635,749 - Hong June 3, 1 | 1997-06-03 |
Method of manufacturing buried bit line flash EEPROM memory cell
Grant 5,635,415 - Hong June 3, 1 | 1997-06-03 |
Flash EEPROM memory cell with polysilicon source/drain
Grant 5,631,482 - Hong May 20, 1 | 1997-05-20 |
Flash memory array with self-limiting erase
Grant 5,625,600 - Hong April 29, 1 | 1997-04-29 |
Interconnection with self-aligned via plug
Grant 5,596,230 - Hong January 21, 1 | 1997-01-21 |
Method for manufacturing a stacked/trench DRAM capacitor
Grant 5,585,303 - Hong , et al. December 17, 1 | 1996-12-17 |
Double poly high density buried bit line mask ROM
Grant 5,578,857 - Hong , et al. November 26, 1 | 1996-11-26 |
Flash memory array with self-limiting erase
Grant 5,576,993 - Hong November 19, 1 | 1996-11-19 |
Flash memory cell with self-aligned tunnel dielectric area above LDD structure
Grant 5,569,946 - Hong October 29, 1 | 1996-10-29 |
Process for fabricating a flash EEPROM
Grant 5,556,799 - Hong September 17, 1 | 1996-09-17 |
Method for isolating non-volatile memory cells
Grant 5,556,798 - Hong September 17, 1 | 1996-09-17 |
Ion implanted programmable cell for read only memory applications
Grant 5,550,075 - Hsu , et al. August 27, 1 | 1996-08-27 |
Process for fabricating MOS transistors having full-overlap lightly-doped drain structure
Grant 5,538,913 - Hong July 23, 1 | 1996-07-23 |
Process for fabricating MOS LDD transistor with pocket implant
Grant 5,534,447 - Hong July 9, 1 | 1996-07-09 |
Method of making buried bit line ROM with low bit line resistance
Grant 5,529,943 - Hong , et al. June 25, 1 | 1996-06-25 |
Method for making doped well and field regions on semiconductor substrates for field effect transistors using liquid phase deposition of oxides
Grant 5,525,535 - Hong June 11, 1 | 1996-06-11 |
Method for fabricating a self aligned mask ROM
Grant 5,523,251 - Hong June 4, 1 | 1996-06-04 |
Method of manufacture of a split gate flash EEPROM memory cell
Grant 5,512,503 - Hong April 30, 1 | 1996-04-30 |
Process for post metal coding of a ROM, by gate etch
Grant 5,512,507 - Yang , et al. April 30, 1 | 1996-04-30 |
MOSFET device structure three spaced-apart deep boron implanted channel regions aligned with gate electrode of NMOSFET device
Grant 5,512,770 - Hong April 30, 1 | 1996-04-30 |
Buried bit line mask ROM process
Grant 5,510,288 - Hong April 23, 1 | 1996-04-23 |
Method of making a high resistance drain junction resistor in a SRAM
Grant 5,506,167 - Chen , et al. April 9, 1 | 1996-04-09 |
Method for fabricating semiconductor devices with localized pocket implantation
Grant 5,504,023 - Hong April 2, 1 | 1996-04-02 |
Method of fabricating thin O/N/O stacked dielectric for high-density DRAMs
Grant 5,504,021 - Hong , et al. April 2, 1 | 1996-04-02 |
Split-gate process for non-volatile memory
Grant 5,496,747 - Hong March 5, 1 | 1996-03-05 |
Split-gate flash memory cell
Grant 5,495,441 - Hong February 27, 1 | 1996-02-27 |
Method of forming a MOS device having a localized anti-punchthrough region
Grant 5,489,543 - Hong February 6, 1 | 1996-02-06 |
Trench EEPROM with tunnel oxide in trench
Grant 5,486,714 - Hong January 23, 1 | 1996-01-23 |
Method for fabricating a stacked capacitor for dynamic random access memory cell
Grant 5,484,744 - Hong January 16, 1 | 1996-01-16 |
Process of fabricating split gate flash memory cell
Grant 5,482,879 - Hong January 9, 1 | 1996-01-09 |
Structure for flash memory cell
Grant 5,481,128 - Hong January 2, 1 | 1996-01-02 |
Method of making a flash EEPROM memory cell comprising polysilicon and textured oxide sidewall spacers
Grant 5,478,767 - Hong December 26, 1 | 1995-12-26 |
High performance field effect transistor and method of manufacture thereof
Grant 5,478,763 - Hong December 26, 1 | 1995-12-26 |
Method for fabricating polycide gate MOSFET devices
Grant 5,472,896 - Chen , et al. December 5, 1 | 1995-12-05 |
Method for improving erase characteristics and coupling ratios of buried bit line flash EPROM devices
Grant 5,473,179 - Hong December 5, 1 | 1995-12-05 |
Method of fabricating lightly doped drain transistor device
Grant 5,472,894 - Hsu , et al. December 5, 1 | 1995-12-05 |
Method for fabricating MOS device with reduced anti-punchthrough region
Grant 5,472,897 - Hsu , et al. December 5, 1 | 1995-12-05 |
Method of making a flash EPROM device having a drain edge P+ implant
Grant 5,464,785 - Hong November 7, 1 | 1995-11-07 |
Method of making high coupling ratio flash EEPROM device
Grant 5,460,991 - Hong October 24, 1 | 1995-10-24 |
Process for high density flash EPROM cell
Grant 5,460,988 - Hong October 24, 1 | 1995-10-24 |
Method for making fin-shaped stack capacitors on DRAM chips
Grant 5,460,999 - Hong , et al. October 24, 1 | 1995-10-24 |
Method of making top floating-gate flash EEPROM structure
Grant 5,457,061 - Hong , et al. October 10, 1 | 1995-10-10 |
Lightly doped drain transistor device having the polysilicon sidewall spacers
Grant 5,453,635 - Hsu , et al. September 26, 1 | 1995-09-26 |
Process on thickness control for silicon-on-insulator technology
Grant 5,449,638 - Hong , et al. September 12, 1 | 1995-09-12 |
Method of manufacturing EEPROM memory device with a select gate
Grant 5,445,983 - Hong August 29, 1 | 1995-08-29 |
Method of making a split gate flash memory cell
Grant 5,445,984 - Hong , et al. August 29, 1 | 1995-08-29 |
Method of fabrication of MOSFET device with buried bit line
Grant 5,438,009 - Yang , et al. August 1, 1 | 1995-08-01 |
Manufacture of an asymmetric non-volatile memory cell
Grant 5,432,106 - Hong July 11, 1 | 1995-07-11 |
Process for EPROM, flash memory with high coupling ratio
Grant 5,432,112 - Hong July 11, 1 | 1995-07-11 |
Method for fabricating a field effect transistor with a self-aligned anti-punchthrough implant channel
Grant 5,429,956 - Shell , et al. July 4, 1 | 1995-07-04 |
Method of making flash EEPROM memory
Grant 5,429,960 - Hong July 4, 1 | 1995-07-04 |
Process for producing a very high density mask ROM
Grant 5,429,967 - Hong July 4, 1 | 1995-07-04 |
Method of making flash EEPROM memory cell
Grant 5,429,970 - Hong July 4, 1 | 1995-07-04 |
Process for flat-cell mask ROM integrated circuit
Grant 5,418,175 - Hsue , et al. May 23, 1 | 1995-05-23 |
Method of making self-aligned MOSFET
Grant 5,413,949 - Hong May 9, 1 | 1995-05-09 |
Method of forming a DRAM stacked capacitor cell
Grant 5,413,950 - Chen , et al. May 9, 1 | 1995-05-09 |
Process for high density split-gate memory cell for flash or EPROM
Grant 5,414,287 - Hong May 9, 1 | 1995-05-09 |
Method of making flash memory cell with self-aligned tunnel dielectric area
Grant 5,413,946 - Hong May 9, 1 | 1995-05-09 |
Process of manufacture of split gate EPROM device
Grant 5,395,779 - Hong March 7, 1 | 1995-03-07 |
Process for fabricating double poly high density buried bit line mask ROM
Grant 5,393,233 - Hong , et al. February 28, 1 | 1995-02-28 |
Interconnection process with self-aligned via plug
Grant 5,382,545 - Hong January 17, 1 | 1995-01-17 |
Method of making a bottom gate mask ROM device
Grant 5,378,647 - Hong January 3, 1 | 1995-01-03 |
Method for improving erase characteristics and coupling ratios of buried bit line flash EPROM devices
Grant 5,352,619 - Hong October 4, 1 | 1994-10-04 |
Device for preventing antenna effect on circuit
Grant 5,350,710 - Hong , et al. September 27, 1 | 1994-09-27 |
Flash memory cell and its operation
Grant 5,349,220 - Hong September 20, 1 | 1994-09-20 |
Uniform field oxidation for locos isolation
Grant 5,308,787 - Hong , et al. May 3, 1 | 1994-05-03 |
Mask ROM process
Grant 5,308,777 - Hong May 3, 1 | 1994-05-03 |
Method of fabricating a flash memory cell
Grant 5,298,447 - Hong March 29, 1 | 1994-03-29 |
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