Holt; Jim G.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Holt; Jim G..The latest application filed is for "assymetric hetero-doped high-voltage mosfet (ah2mos)".

Company Profile

0.7.7

Holt; Jim G. - Los Altos CA US

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
High-voltage diodes formed in advanced power integrated circuit devices Grant 8,823,051 - Cai , et al. September 2, 2	2014-09-02
Assymetric Hetero-doped High-voltage Mosfet (ah2mos) App 20100084686 - Cai; Jun ; et al.	2010-04-08
Method of fabricating an enhanced resurf HVPMOS device Grant 7,678,656 - Cai , et al. March 16, 2	2010-03-16
Asymmetric hetero-doped high-voltage MOSFET (AH.sup.2MOS) Grant 7,649,225 - Cai , et al. January 19, 2	2010-01-19
Enhanced Resurf Hvpmos Device With Stacked Hetero-doping Rim And Gradual Drift Region App 20070120184 - Cai; Jun ; et al.	2007-05-31
Asymmetric Hetero-doped High-voltage Mosfet (ah2mos) App 20070040212 - Cai; Jun ; et al.	2007-02-22
Enhanced RESURF HVPMOS device with stacked hetero-doping RIM and gradual drift region Grant 7,180,132 - Cai , et al. February 20, 2	2007-02-20
High-voltage diodes formed in advanced power integrated circuit devices App 20070018250 - Cai; Jun ; et al.	2007-01-25
Asymmetric hetero-doped high-voltage MOSFET (AH.sup.2MOS) Grant 7,125,777 - Cai , et al. October 24, 2	2006-10-24
High-voltage Diodes Formed In Advanced Power Integrated Circuit Devices App 20060118814 - Cai; Jun ; et al.	2006-06-08
High-voltage diodes formed in advanced power integrated circuit devices Grant 7,045,830 - Cai , et al. May 16, 2	2006-05-16
Enhanced resurf HVPMOS device with stacked hetero-doping RIM and gradual drift region App 20060057784 - Cai; Jun ; et al.	2006-03-16
Asymmetric hetero-doped high-voltage MOSFET (AH2MOS) App 20060011985 - Cai; Jun ; et al.	2006-01-19

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