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Patent applications and USPTO patent grants for Holbrook; Allison K..The latest application filed is for "method for integrating a high-k gate dielectric in a transistor fabrication process".
Patent | Date |
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CMOS gates formed by integrating metals having different work functions and having a high-k gate dielectric Grant 7,176,531 - Xiang , et al. February 13, 2 | 2007-02-13 |
Method for integrating a high-k gate dielectric in a transistor fabrication process App 20050101147 - Labelle, Catherine B. ;   et al. | 2005-05-12 |
Method for integrating metals having different work functions to form CMOS gates having a high-k gate dielectric and related structure Grant 6,872,613 - Xiang , et al. March 29, 2 | 2005-03-29 |
Method For Integrating Metals Having Different Work Functions To Fom Cmos Gates Having A High-k Gate Dielectric And Related Structure App 20050054149 - Xiang, Qi ;   et al. | 2005-03-10 |
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