| Patent | Date |
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Group III-nitride structure having successively reduced crystallographic dislocation density regions
Grant 10,622,447 - Schultz , et al. | 2020-04-14 |
Group Iii - Nitride Structure Having Successively Reduced Crystallographic Dislocation Density Regions
App 20180286954 - Schultz; Brian D. ; et al. | 2018-10-04 |
Doped barrier layers in epitaxial group III nitrides
Grant 9,419,125 - Schultz , et al. August 16, 2 | 2016-08-16 |
Semiconductor structure with layers having different hydrogen contents
Grant 9,293,379 - Chumbes , et al. March 22, 2 | 2016-03-22 |
Method For Reducing Growth Of Non-uniformities And Autodoping During Column Iii-v Growth Into Dielectric Windows
App 20150059640 - LaRoche; Jeffrey R. ; et al. | 2015-03-05 |
Semiconductor structure having silicon devices, column III-nitride devices, and column III-non-nitride or column II-VI devices
Grant 8,823,146 - Hoke September 2, 2 | 2014-09-02 |
Semiconductor Structure Having Silicon Devices, Column Iii-nitride Devices, And Column Iii-non-nitride Or Column Ii-vi Devices
App 20140231870 - Hoke; William E. | 2014-08-21 |
Gallium nitride devices having low ohmic contact resistance
Grant 8,772,786 - Tabatabaie , et al. July 8, 2 | 2014-07-08 |
Polarization Effect Carrier Generating Device Structures Having Compensation Doping To Reduce Leakage Current
App 20140183545 - Hoke; William E. | 2014-07-03 |
Gallium nitride for liquid crystal electrodes
Grant 8,698,200 - Resler , et al. April 15, 2 | 2014-04-15 |
Gallium Nitride Devices Having Low Ohmic Contact Resistance
App 20140014966 - Tabatabaie; Kamal ; et al. | 2014-01-16 |
Method and structure having monolithic heterogeneous integration of compound semiconductors with elemental semiconductor
Grant 8,575,666 - LaRoche , et al. November 5, 2 | 2013-11-05 |
Semiconductor Structures Having Nucleation Layer To Prevent Interfacial Charge For Column Iii-v Materials On Column Iv Or Column Iv-iv Materials
App 20130161699 - Hoke; William E. | 2013-06-27 |
Method And Structure Having Monolithic Heterogeneous Integration Of Compound Semiconductors With Elemental Semiconductor
App 20130082281 - LaRoche; Jeffrey R. ; et al. | 2013-04-04 |
Gallium Nitride for Liquid Crystal Electrodes
App 20120299012 - Resler; Daniel P. ; et al. | 2012-11-29 |
Optically Transparent Conductors
App 20120300168 - Hoke; William E. | 2012-11-29 |
Semiconductor Structures Having Nucleation Layer To Prevent Interfacial Charge For Column Iii-v Materials On Column Iv Or Column Iv-iv Materials
App 20120261721 - Hoke; William E. | 2012-10-18 |
Gallium nitride for liquid crystal electrodes
Grant 8,268,707 - Resler , et al. September 18, 2 | 2012-09-18 |
Structure having silicon CMOS transistors with column III-V transistors on a common substrate
Grant 8,212,294 - Hoke , et al. July 3, 2 | 2012-07-03 |
Structure Having Silicon Cmos Transistors With Column Iii-v Transistors On A Common Substrate
App 20110180857 - Hoke; William E. ; et al. | 2011-07-28 |
Boron aluminum nitride diamond heterostructure
Grant 7,968,865 - LaRoche , et al. June 28, 2 | 2011-06-28 |
Semiconductor Structure And Method
App 20110049581 - Chumbes; Eduardo M. ; et al. | 2011-03-03 |
Gallium Nitride For Liquid Crystal Electrodes
App 20100320474 - Resler; Daniel P. ; et al. | 2010-12-23 |
Method for continuous, in situ evaluation of entire wafers for macroscopic features during epitaxial growth
Grant 7,776,152 - Hoke , et al. August 17, 2 | 2010-08-17 |
Boron Aluminum Nitride Diamond Heterostructure
App 20100090228 - LaRoche; Jeffrey R. ; et al. | 2010-04-15 |
Boron aluminum nitride diamond heterostructure
Grant 7,557,378 - LaRoche , et al. July 7, 2 | 2009-07-07 |
Semiconductor Structure Having Plural Back-barrier Layers For Improved Carrier Confinement
App 20080258135 - Hoke; William E. ; et al. | 2008-10-23 |
Boron Aluminum Nitride Diamond Heterostructure
App 20080121897 - LaRoche; Jeffrey R. ; et al. | 2008-05-29 |
Method For Continuous, In Situ Evaluation Of Entire Wafers For Macroscopic Features During Epitaxial Growth
App 20080098953 - Hoke; William E. ; et al. | 2008-05-01 |
Gallium Nitride High Electron Mobility Transistor Structure
App 20070164313 - Hoke; William E. ; et al. | 2007-07-19 |
Gallium nitride high electron mobility transistor structure
Grant 7,226,850 - Hoke , et al. June 5, 2 | 2007-06-05 |
Strain compensated high electron mobility transistor
App 20070052048 - Hoke; William E. | 2007-03-08 |
Gallium nitride high electron mobility transistor structure
App 20060261370 - Hoke; William E. ; et al. | 2006-11-23 |
Split-channel High Electron Mobility Transistor (hemt) Device
App 20040262632 - Marsh, Philbert F. ; et al. | 2004-12-30 |
Split-channel high electron mobility transistor (HEMT) device
Grant 6,835,969 - Marsh , et al. December 28, 2 | 2004-12-28 |
Quaternary-ternary semiconductor devices
Grant 6,818,928 - Hoke , et al. November 16, 2 | 2004-11-16 |
Double recessed transistor
Grant 6,797,994 - Hoke , et al. September 28, 2 | 2004-09-28 |
Quaternary-ternary semiconductor devices
App 20040108574 - Hoke, William E. ; et al. | 2004-06-10 |
Double recessed transistor
App 20030207508 - Hoke, William E. ; et al. | 2003-11-06 |
Double recessed transistor
Grant 6,620,662 - Hoke , et al. September 16, 2 | 2003-09-16 |
Gate electrode formation in double-recessed transistor by two-step etching
Grant 6,573,129 - Hoke , et al. June 3, 2 | 2003-06-03 |
Double recessed transistor
App 20010029073 - Hoke, William E. ; et al. | 2001-10-11 |
Double recessed transistor
App 20010023133 - Hoke, William E. ; et al. | 2001-09-20 |
Double recessed transistor with resistive layer
Grant 6,271,547 - Hoke , et al. August 7, 2 | 2001-08-07 |
Field effect transistors on spinel substrates
Grant 5,448,084 - Hoke , et al. September 5, 1 | 1995-09-05 |
Reactor vessel for the growth of heterojunction devices
Grant 5,077,875 - Hoke , et al. January 7, 1 | 1992-01-07 |
Low temperature metalorganic chemical vapor depostion growth of group II-VI semiconductor materials
Grant 4,886,683 - Hoke , et al. December 12, 1 | 1989-12-12 |
Metalorganic chemical vapor deposition growth of Group II-IV semiconductor materials having improved compositional uniformity
Grant 4,804,638 - Hoke , et al. February 14, 1 | 1989-02-14 |
Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials
Grant 4,568,397 - Hoke , et al. February 4, 1 | 1986-02-04 |
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