Hoilien; Noel
Patent Applications and Registrations
Patent applications and USPTO patent grants for Hoilien; Noel.The latest application filed is for "transistor with improved switching".
- Hoilien; Noel - Minneapolis MN
- Hoilien; Noel - Saint Paul MN
| Patent | Date |
|---|---|
| Insulated gate bipolar transistor with epitaxial layer formed on recombination region Grant 11,329,147 - Hoilien May 10, 2 | 2022-05-10 |
| Transistor with buried p-field termination region Grant 11,264,496 - Hoilien March 1, 2 | 2022-03-01 |
| Transistor With Improved Switching App 20210359115 - Hoilien; Noel | 2021-11-18 |
| Transistor With Buried P-field Termination Region App 20210328054 - Hoilien; Noel | 2021-10-21 |
| Vertical hall effect sensor Grant 9,735,345 - Kosier , et al. August 15, 2 | 2017-08-15 |
| Vertical Hall Effect Sensor App 20160190433 - Kosier; Steven ; et al. | 2016-06-30 |
| Vertical hall effect sensor Grant 9,312,473 - Kosier , et al. April 12, 2 | 2016-04-12 |
| Vertical Hall Effect Sensor App 20150091112 - Kosier; Steven ; et al. | 2015-04-02 |
| Integrated hybrid hall effect transducer Grant 8,736,003 - Erie , et al. May 27, 2 | 2014-05-27 |
| Locos nitride capping of deep trench polysilicon fill Grant 8,461,661 - Hoilien June 11, 2 | 2013-06-11 |
| Integrated Hybrid Hall Effect Transducer App 20110147865 - Erie; David ; et al. | 2011-06-23 |
| Locos Nitride Capping Of Deep Trench Polysilicon Fill App 20100252905 - Hoilien; Noel | 2010-10-07 |
| Multilayered emitter window for bipolar junction transistor App 20060267146 - Hoilien; Noel ; et al. | 2006-11-30 |
| Multi-layered spacer for lightly-doped drain MOSFETS App 20060270165 - Rho; Kyeonglan ; et al. | 2006-11-30 |
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