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Hoepfner; Joachim Patent Filings

Hoepfner; Joachim

Patent Applications and Registrations

Patent applications and USPTO patent grants for Hoepfner; Joachim.The latest application filed is for "method for producing a ferroelectric layer".

Company Profile
0.11.3
  • Hoepfner; Joachim - Planegg DE
  • Hoepfner, Joachim - Poughkeepsie NY
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Method for producing a ferroelectric layer
Grant 6,790,676 - Cerva , et al. September 14, 2
2004-09-14
Method for fabricating an integrated semiconductor product
Grant 6,645,855 - Hoepfner November 11, 2
2003-11-11
Method for producing a ferroelectric layer
App 20030138977 - Cerva, Hans ;   et al.
2003-07-24
Plasma doping for DRAM with deep trenches and hemispherical grains
Grant 6,475,859 - Tews , et al. November 5, 2
2002-11-05
Low leakage, low capacitance isolation material
Grant 6,465,370 - Schrems , et al. October 15, 2
2002-10-15
Method for fabricating an integrated semiconductor product
App 20020064960 - Hoepfner, Joachim
2002-05-30
Low leakage capacitance isolation material
App 20020025622 - Schrems, Martin ;   et al.
2002-02-28
Method for fabricating a trench capacitor
Grant 6,265,279 - Radens , et al. July 24, 2
2001-07-24
Method for producing a polycrystalline silicon structure and polycrystalline silicon layer to be produced by the method
Grant 6,068,928 - Schrems , et al. May 30, 2
2000-05-30
Bottle-shaped trench capacitor with epi buried layer
Grant 6,018,174 - Schrems , et al. January 25, 2
2000-01-25
Method for forming trench capacitors in an integrated circuit
Grant 6,008,103 - Hoepfner December 28, 1
1999-12-28
Trench capacitor with epi buried layer
Grant 5,945,704 - Schrems , et al. August 31, 1
1999-08-31
Method of making planar heterobipolar transistor having trenched isolation of the collector terminal
Grant 5,340,755 - Zwicknagl , et al. August 23, 1
1994-08-23
Process for the production of etched structures in a surface of a solid body by ionic etching
Grant 4,092,210 - Hoepfner May 30, 1
1978-05-30

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