loadpatents
name:-0.0011188983917236
name:-0.015229940414429
name:-0.00059103965759277
Hochberg; Arthur K. Patent Filings

Hochberg; Arthur K.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Hochberg; Arthur K..The latest application filed is for "process for improved quality of cvd copper films".

Company Profile
0.14.0
  • Hochberg; Arthur K. - Solana Beach CA
  • Hochberg; Arthur K. - Salana Beach CA
  • Hochberg; Arthur K. - Selana Beach CA
  • Hochberg; Arthur K. - San Diego CA
  • Hochberg; Arthur K. - Torrance CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Process for improved quality of CVD copper films
Grant RE35,614 - Norman , et al. September 23, 1
1997-09-23
Plasma etch with trifluoroacetic acid and derivatives
Grant 5,626,775 - Roberts , et al. May 6, 1
1997-05-06
Fluorine doped silicon oxide process
Grant 5,492,736 - Laxman , et al. February 20, 1
1996-02-20
Deposition of tungsten films from mixtures of tungsten hexafluoride organohydrosilanes and hydrogen
Grant 5,433,975 - Roberts , et al. July 18, 1
1995-07-18
Process for improved quality of CVD copper films
Grant 5,322,712 - Norman , et al. June 21, 1
1994-06-21
Furnace tube cleaning process
Grant 5,298,075 - Lagendijk , et al. March 29, 1
1994-03-29
Low ozone depleting organic chlorides for use during silicon oxidation and furnace tube cleaning
Grant 5,288,662 - Lagendijk , et al. February 22, 1
1994-02-22
Deposition of silicon dioxide films at temperatures as low as 100 degree C. by LPCVD using organodisilane sources
Grant 5,204,141 - Roberts , et al. April 20, 1
1993-04-20
Deposition of silicon dioxide and silicon oxynitride films using azidosilane sources
Grant 4,992,306 - Hochberg , et al. February 12, 1
1991-02-12
Deposition of silicon nitride films from azidosilane sources
Grant 4,992,299 - Hochberg , et al. February 12, 1
1991-02-12
Deposition of silicon oxide films using alkylsilane liquid sources
Grant 4,981,724 - Hochberg , et al. January 1, 1
1991-01-01
Reactant gas flow structure for a low pressure chemical vapor deposition system
Grant 4,220,116 - Hochberg September 2, 1
1980-09-02
Dielectrically isolated semiconductor devices
Grant 3,966,577 - Hochberg June 29, 1
1976-06-29
Method for fabricating planar semiconductor devices
Grant 3,912,557 - Hochberg October 14, 1
1975-10-14

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