Hobgood; Hudson M.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Hobgood; Hudson M..The latest application filed is for "method for controlled growth of silicon carbide and structures produced by same".

Company Profile

2.15.12

Hobgood; Hudson M. - Pittsboro NC
- Pittsboro NC US
Hobgood; Hudson M. - Murrysville PA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method for controlled growth of silicon carbide and structures produced by same Grant 9,048,166 - Leonard , et al. June 2, 2	2015-06-02
Process for producing silicon carbide crystals having increased minority carrier lifetimes Grant 08618553 -	2013-12-31
Process for producing silicon carbide crystals having increased minority carrier lifetimes Grant 8,618,553 - Carter, Jr. , et al. December 31, 2	2013-12-31
Method For Controlled Growth Of Silicon Carbide And Structures Produced By Same App 20130153928 - Leonard; Robert Tyler ; et al.	2013-06-20
Method for controlled growth of silicon carbide and structures produced by same Grant 8,377,806 - Leonard , et al. February 19, 2	2013-02-19
Halogen Assisted Physical Vapor Transport Method For Silicon Carbide Growth App 20120167825 - MUELLER; STEPHAN G. ; et al.	2012-07-05
Halogen assisted physical vapor transport method for silicon carbide growth Grant 8,163,086 - Mueller , et al. April 24, 2	2012-04-24
Method For Controlled Growth Of Silicon Carbide And Structures Produced By Same App 20110266556 - Leonard; Robert Tyler ; et al.	2011-11-03
Minimizing degradation of SiC bipolar semiconductor devices Grant 7,880,171 - Sumakeris , et al. February 1, 2	2011-02-01
Process For Producing Silicon Carbide Crystals Having Increased Minority Carrier Lifetimes App 20100320477 - Carter, JR.; Calvin H. ; et al.	2010-12-23
Process for producing silicon carbide crystals having increased minority carrier lifetimes Grant 7,811,943 - Carter, Jr. , et al. October 12, 2	2010-10-12
Halogen Assisted Physical Vapor Transport Method for Silicon Carbide Growth App 20090056619 - Mueller; Stephan G. ; et al.	2009-03-05
Minimizing degradation of SiC bipolar semiconductor devices Grant 7,427,326 - Sumakeris , et al. September 23, 2	2008-09-23
One hundred millimeter single crystal silicon carbide wafer Grant 7,323,051 - Hobgood , et al. January 29, 2	2008-01-29
Minimizing Degradation of SiC Bipolar Semiconductor Devices App 20070117336 - Sumakeris; Joseph J. ; et al.	2007-05-24
Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient Grant 7,220,313 - Fechko, Jr. , et al. May 22, 2	2007-05-22
Process for producing silicon carbide crystals having increased minority carrier lifetimes App 20060130742 - Carter; Calvin H. JR. ; et al.	2006-06-22
Semi-insulating silicon carbide produced by Neutron transmutation doping Grant 6,964,917 - Tsvetkov , et al. November 15, 2	2005-11-15
Minimizing degradation of SiC bipolar semiconductor devices App 20050116234 - Sumakeris, Joseph J. ; et al.	2005-06-02
Minimizing degradation of SiC bipolar semiconductor devices App 20050118746 - Sumakeris, Joseph J. ; et al.	2005-06-02
Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient App 20050022727 - Fechko, George J. JR. ; et al.	2005-02-03
Minimizing degradation of SiC bipolar semiconductor devices Grant 6,849,874 - Sumakeris , et al. February 1, 2	2005-02-01
Semi-Insulating Silicon Carbide Produced by Neutron Transmutation Doping App 20040201024 - Tsvetkov, Valeri F. ; et al.	2004-10-14
Minimizing degradation of SiC bipolar semiconductor devices App 20030080842 - Sumakeris, Joseph J. ; et al.	2003-05-01
High resistivity silicon carbide substrates for high power microwave devices Grant 5,611,955 - Barrett , et al. March 18, 1	1997-03-18
Method for epitaxially growing .alpha.-silicon carbide on a-axis .alpha.-silicon carbide substrates Grant 5,501,173 - Burk, Jr. , et al. March 26, 1	1996-03-26

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