Hobart; Karl D.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Hobart; Karl D..The latest application filed is for "surface profile mapping for evaluating iii-n device performance and yield".

Company Profile

15.68.71

Hobart; Karl D. - Alexandria VA
Hobart; Karl D. - Upper Marlboro MD
Hobart; Karl D - Upper Marlboro MD
Hobart; Karl D. - UpperMarlboro MD
Hobart; Karl D. - Upper Marboro MD

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Mapping and evaluating GaN wafers for vertical device applications Grant 11,415,518 - Anderson , et al. August 16, 2	2022-08-16
Heterojunction devices and methods for fabricating the same Grant 11,342,420 - Kub , et al. May 24, 2	2022-05-24
High electron mobility transistors and methods for fabricating the same Grant 11,227,943 - Anderson , et al. January 18, 2	2022-01-18
Surface Profile Mapping for Evaluating III-N Device Performance and Yield App 20210389126 - Gallagher; James C. ; et al.	2021-12-16
Diamond on Nanopatterned Substrate App 20210381127 - Hobart; Karl D. ; et al.	2021-12-09
Transferring Large-Area Group III-Nitride Semiconductor Material and Devices to Arbitrary Substrates App 20210375680 - Anderson; Travis J. ; et al.	2021-12-02
UV laser slicing of .beta.-Ga.sub.2O.sub.3 by micro-crack generation and propagation Grant 11,171,055 - Mahadik , et al. November 9, 2	2021-11-09
Diamond on nanopatterned substrate Grant 11,131,039 - Hobart , et al. September 28, 2	2021-09-28
Heterojunction Devices And Methods For Fabricating The Same App 20210005721 - Kub; Francis J. ; et al.	2021-01-07
Silicon Carbide Structure, Device, And Method App 20200407213 - Kub; Francis J. ; et al.	2020-12-31
Mapping and Evaluating GaN Wafers for Vertical Device Applications App 20200400578 - Anderson; Travis J. ; et al.	2020-12-24
Heterojunction devices and methods for fabricating the same Grant 10,777,644 - Kub , et al. Sept	2020-09-15
UV Laser slicing of Beta-Ga2O3 by micro-crack generation and propagation App 20200251389 - Kind Code	2020-08-06
Silicon carbide microelectromechanical structure, device, and method Grant 10,717,642 - Kub , et al.	2020-07-21
Silicon Carbide Microelectromechanical Structure, Device, and Method App 20200115219 - Kub; Francis J. ; et al.	2020-04-16
Silicon carbide microelectromechanical structure, device, and method Grant 10,589,983 - Kub , et al.	2020-03-17
Diamond on Nanopatterned Substrate App 20190360117 - Hobart; Karl D. ; et al.	2019-11-28
Photodetector App 20190305157 - Kub; Francis J. ; et al.	2019-10-03
Diamond air bridge for thermal management of high power devices Grant 10,424,643 - Hobart , et al. Sept	2019-09-24
Diamond Air Bridge for Thermal Management of High Power Devices App 20190252501 - Hobart; Karl D. ; et al.	2019-08-15
Material structure and method for deep silicon carbide etching Grant 10,343,900 - Imhoff , et al. July 9, 2	2019-07-09
Whole angle MEMS gyroscope on hexagonal crystal substrate Grant 10,317,210 - Kub , et al.	2019-06-11
Diamond air bridge for thermal management of high power devices Grant 10,312,175 - Hobart , et al.	2019-06-04
Diamond Air Bridge for Thermal Management of High Power Devices App 20190157181 - Hobart; Karl D. ; et al.	2019-05-23
Transition metal-bearing capping film for group III-nitride devices Grant 10,229,839 - Anderson , et al.	2019-03-12
High Electron Mobility Transistors And Methods For Fabricating The Same App 20180374944 - Anderson; Travis J. ; et al.	2018-12-27
Heterojunction Devices And Methods For Fabricating The Same App 20180315820 - Kub; Francis J. ; et al.	2018-11-01
Silicon Carbide Structure, Device, And Method App 20180244513 - Kub; Francis J. ; et al.	2018-08-30
Diamond on III-nitride device Grant 10,002,958 - Kub , et al. June 19, 2	2018-06-19
Metal nitride alloy contact for semiconductor Grant 9,991,354 - Anderson , et al. June 5, 2	2018-06-05
Damage-free plasma-enhanced CVD passivation of AlGaN/GaN high electron mobility transistors Grant 9,960,266 - Tadjer , et al. May 1, 2	2018-05-01
Silicon Carbide Microelectromechanical Structure, Device, and Method App 20180086625 - KUB; Francis J. ; et al.	2018-03-29
Material Structure and Method for Deep Silicon Carbide Etching App 20180065844 - IMHOFF; Eugene A. ; et al.	2018-03-08
Diamond On Iii-nitride Device App 20170358670 - Kub; Francis J. ; et al.	2017-12-14
Damage-Free Plasma-Enhanced CVD Passivation of AlGaN/GaN High Electron Mobility Transistors App 20170338332 - Tadjer; Marko J. ; et al.	2017-11-23
Metal Nitride Alloy Contact for Semiconductor App 20170330950 - Anderson; Travis J. ; et al.	2017-11-16
Transition Metal-bearing Capping Film For Group Iii-nitride Devices App 20170316952 - Anderson; Travis J. ; et al.	2017-11-02
Semiconductor structure or device integrated with diamond Grant 9,685,513 - Kub , et al. June 20, 2	2017-06-20
Whole Angle Mems Gyroscope On Hexagonal Crystal Substrate App 20160341552 - Kub; Francis J. ; et al.	2016-11-24
Growth of high-performance III-nitride transistor passivation layer for GaN electronics Grant 9,490,356 - Koehler , et al. November 8, 2	2016-11-08
Transistor with diamond gate Grant 9,466,684 - Koehler , et al. October 11, 2	2016-10-11
Transistor with Diamond Gate App 20160211341 - Koehler; Andrew D. ; et al.	2016-07-21
Growth of High-Performance III-Nitride Transistor Passivation Layer for GaN Electronics App 20160204222 - Koehler; Andrew D. ; et al.	2016-07-14
Transistor with diamond gate Grant 9,331,163 - Koehler , et al. May 3, 2	2016-05-03
Nanocrystalline diamond three-dimensional films in patterned semiconductor substrates Grant 9,305,858 - Hobart , et al. April 5, 2	2016-04-05
Inverted P-channel III-nitride field effect tansistor with Hole Carriers in the channel Grant 9,275,998 - Kub , et al. March 1, 2	2016-03-01
Light-emitting devices with integrated diamond Grant 9,246,305 - Kub , et al. January 26, 2	2016-01-26
Nanocrystalline Diamond Three-Dimensional Films in Patterned Semiconductor Substrates App 20150348866 - Hobart; Karl D. ; et al.	2015-12-03
Selective deposition of diamond in thermal vias Grant 9,196,703 - Hobart , et al. November 24, 2	2015-11-24
Inverted III-nitride P-channel field effect transistor with hole carriers in the channel Grant 9,196,614 - Kub , et al. November 24, 2	2015-11-24
Nanocrystalline diamond three-dimensional films in patterned semiconductor substrates Grant 9,159,641 - Hobart , et al. October 13, 2	2015-10-13
Inverted P-Channel III-Nitride Field Effect Transistor with Hole Carriers in the Channel App 20150221727 - Kub; Francis J. ; et al.	2015-08-06
Inverted III-Nitride P-Channel Field Effect Transistor with Hole Carriers in the Channel App 20150221760 - Kub; Francis J. ; et al.	2015-08-06
Graphene on semiconductor detector Grant 9,029,833 - Kub , et al. May 12, 2	2015-05-12
III-nitride P-channel field effect transistor with hole carriers in the channel Grant 9,006,791 - Kub , et al. April 14, 2	2015-04-14
Transistor with Diamond Gate App 20150060947 - Koehler; Andrew D. ; et al.	2015-03-05
Selective Deposition Of Diamond In Thermal Vias App 20150056763 - Hobart; Karl D. ; et al.	2015-02-26
Graphene on Semiconductor Detector App 20140367824 - Kub; Francis J. ; et al.	2014-12-18
Transistor with enhanced channel charge inducing material layer and threshold voltage control Grant 8,900,939 - Kub , et al. December 2, 2	2014-12-02
Growth of High-Performance III-Nitride Transistor Passivation Layer for GaN Electronics App 20140335666 - Koehler; Andrew D. ; et al.	2014-11-13
Graphene on semiconductor detector Grant 8,872,159 - Kub , et al. October 28, 2	2014-10-28
Nanocrystalline Diamond Three-Dimensional Films in Patterned Semiconductor Substrates App 20140264777 - Hobart; Karl D. ; et al.	2014-09-18
III-Nitride P-Channel Field Effect Transistor with Hole Carriers in the Channel App 20140264379 - Kub; Francis J. ; et al.	2014-09-18
Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substrates Grant 8,753,468 - Caldwell , et al. June 17, 2	2014-06-17
Transistor With Enhanced Channel Charge Inducing Material Layer And Threshold Voltage Control App 20140141580 - Kub; Francis J. ; et al.	2014-05-22
Silicon carbide rectifier Grant 8,723,218 - Hobart , et al. May 13, 2	2014-05-13
Semiconductor Structure or Device Integrated with Diamond App 20140110722 - Kub; Francis J. ; et al.	2014-04-24
Transistor with enhanced channel charge inducing material layer and threshold voltage control Grant 8,648,390 - Kub , et al. February 11, 2	2014-02-11
Silicon Carbide Rectifier App 20130240905 - Hobart; Karl D. ; et al.	2013-09-19
Transistor With Enhanced Channel Charge Inducing Material Layer And Threshold Voltage Control App 20130161641 - Kub; Francis J. ; et al.	2013-06-27
Transparent nanocrystalline diamond contacts to wide bandgap semiconductor devices Grant 8,445,383 - Hobart , et al. May 21, 2	2013-05-21
Graphene on Semiconductor Detector App 20130082241 - Kub; Francis J. ; et al.	2013-04-04
Transistor with enhanced channel charge inducing material layer and threshold voltage control Grant 8,384,129 - Kub , et al. February 26, 2	2013-02-26
Neutron detector with gamma ray isolation Grant 8,008,626 - Kub , et al. August 30, 2	2011-08-30
Neutron Detector with Gamma Ray Isolation App 20110127527 - Kub; Francis J. ; et al.	2011-06-02
Method of mediating forward voltage drift in a SiC device Grant 7,915,143 - Caldwell , et al. March 29, 2	2011-03-29
Neutron detector with gamma ray isolation Grant 7,902,513 - Kub , et al. March 8, 2	2011-03-08
METHOD FOR THE REDUCTION OF GRAPHENE FILM THICKNESS AND THE REMOVAL AND TRANSFER OF EPITAXIAL GRAPHENE FILMS FROM SiC SUBSTRATES App 20110048625 - Caldwell; Joshua D. ; et al.	2011-03-03
Transistor with Enhanced Channel Charge Inducing Material Layer and Threshold Voltage Control App 20100327322 - Kub; Francis J. ; et al.	2010-12-30
Neutron Detector with Gamma Ray Isolation App 20100213380 - Kub; Francis J. ; et al.	2010-08-26
Method for fabricating junction termination extension with formation of photosensitive dopant mask to control doping profile and lateral width for high-voltage electronic devices Grant 7,759,186 - Imhoff , et al. July 20, 2	2010-07-20
Junction Termination Extension with Controllable Doping Profile and Controllable Width for High-Voltage Electronic Devices App 20100055882 - Imhoff; Eugene A. ; et al.	2010-03-04
Method Of Mediating Forward Voltage Drift In A Sic Device App 20090273390 - CALDWELL; JOSHUA D. ; et al.	2009-11-05
Wafer bonding of thinned electronic materials and circuits to high performance substrates Grant 7,535,100 - Kub , et al. May 19, 2	2009-05-19
Transparent Nanocrystalline Diamond Contacts To Wide Bandgap Semiconductor Devices App 20090090918 - Hobart; Karl D. ; et al.	2009-04-09
Vertical conducting power semiconducting devices made by deep reactive ion etching Grant 7,282,753 - Kub , et al. October 16, 2	2007-10-16
Vertical Conducting Power Semiconducting Devices Made By Deep Reactive Ion Etching App 20070018179 - Kub; Francis J. ; et al.	2007-01-25
Vertical conducting power semiconductor devices implemented by deep etch Grant 7,132,321 - Kub , et al. November 7, 2	2006-11-07
Wafer Bonding Of Thinned Electronic Materials And Circuits To High Performance Substrate App 20060199353 - Kub; Francis J. ; et al.	2006-09-07
Wafer bonded silicon radiation detectors App 20060118728 - Phlips; Bernard ; et al.	2006-06-08
Double sided IGBT phase leg architecture and clocking method for reduced turn on loss Grant 6,856,520 - Neilson , et al. February 15, 2	2005-02-15
Method for transferring thin film layer material to a flexible substrate using a hydrogen ion splitting technique App 20040224482 - Kub, Francis J. ; et al.	2004-11-11
Low temperature hydrophobic direct wafer bonding Grant 6,787,885 - Esser , et al. September 7, 2	2004-09-07
Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting Grant 6,767,749 - Kub , et al. July 27, 2	2004-07-27
Low temperature hydrophobic direct wafer bonding App 20040084720 - Esser, Robert H. ; et al.	2004-05-06
Vertical conducting power semiconductor devices implemented by deep etch App 20040082116 - Kub, Francis J. ; et al.	2004-04-29
Double sided IGBT phase leg architecture and clocking method for reduced turn on loss App 20040070027 - Neilson, John M. ; et al.	2004-04-15
Wafer bonding of thinned electronic materials and circuits to high performance substrates App 20040009649 - Kub, Francis J. ; et al.	2004-01-15
Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting App 20030199105 - Kub, Francis J. ; et al.	2003-10-23
Method of transferring thin film functional material to a semiconductor substrate or optimized substrate using a hydrogen ion splitting technique App 20030186521 - Kub, Francis J. ; et al.	2003-10-02
Method for making pyroelectric, electro-optical and decoupling capacitors using thin film transfer and hydrogen ion splitting techniques Grant 6,607,969 - Kub , et al. August 19, 2	2003-08-19
Method for making shallow diffusion junctions in semiconductors using elemental doping Grant 6,555,451 - Kub , et al. April 29, 2	2003-04-29
Method of manufacturing a semiconductor device having a thin GaN material directly bonded to an optimized substrate App 20030064535 - Kub, Francis J. ; et al.	2003-04-03
Electronic device with composite substrate Grant 6,497,763 - Kub , et al. December 24, 2	2002-12-24
Electronic device with composite substrate App 20020096106 - Kub, Francis J. ; et al.	2002-07-25
Single-crystal material on non-single-crystalline substrate Grant 6,328,796 - Kub , et al. December 11, 2	2001-12-11
Fabrication ultra-thin bonded semiconductor layers Grant 6,323,108 - Kub , et al. November 27, 2	2001-11-27
Automatically sharp field emission cathodes Grant 6,201,342 - Hobart , et al. March 13, 2	2001-03-13
Atomically sharp field emission cathodes Grant 6,113,451 - Hobart , et al. September 5, 2	2000-09-05

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