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Patent applications and USPTO patent grants for Ho; Yu-Lam.The latest application filed is for "method of forming source and drain regions for cmos devices".
Patent | Date |
---|---|
Method of forming source and drain regions for CMOS devices Grant 6,432,759 - Ho August 13, 2 | 2002-08-13 |
Implantation of a semiconductor substrate with controlled amount of noble gas ions to reduce channeling and/or diffusion of a boron dopant subsequently implanted into the substrate to form P- LDD region of a PMOS device Grant 5,585,286 - Aronowitz , et al. December 17, 1 | 1996-12-17 |
Control and modification of dopant distribution and activation in polysilicon Grant 5,468,974 - Aronowitz , et al. November 21, 1 | 1995-11-21 |
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