loadpatents
name:-0.0051231384277344
name:-0.010102987289429
name:-0.00047707557678223
Ho; Ernes Patent Filings

Ho; Ernes

Patent Applications and Registrations

Patent applications and USPTO patent grants for Ho; Ernes.The latest application filed is for "3 transistor (n/p/n) non-volatile memory cell without program disturb".

Company Profile
0.7.4
  • Ho; Ernes - Sunnyvale CA
  • Ho; Ernes - Campbell CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
5-transistor non-volatile memory cell
Grant 8,284,600 - Poplevine , et al. October 9, 2
2012-10-09
4-transistor non-volatile memory cell with PMOS-NMOS-PMOS-NMOS structure
Grant 8,213,227 - Poplevine , et al. July 3, 2
2012-07-03
Method of directly reading output voltage to determine data stored in a non-volatile memory cell
Grant 8,159,877 - Poplevine , et al. April 17, 2
2012-04-17
3 Transistor (n/p/n) Non-volatile Memory Cell Without Program Disturb
App 20120014183 - Poplevine; Pavel ;   et al.
2012-01-19
4-transistor Non-volatile Memory Cell With Pmos-nmos-pmos-nmos Structure
App 20110242898 - Poplevine; Pavel ;   et al.
2011-10-06
Method Of Directly Reading Output Voltage To Determine Data Stored In A Non-volatile Memory Cell
App 20110235425 - Poplevine; Pavel ;   et al.
2011-09-29
Method of making a non-volatile memory (NVM) cell structure and program biasing techniques for the NVM cell structure
Grant 7,602,641 - Poplevine , et al. October 13, 2
2009-10-13
Method of making a non-volatile memory (NVM) cell structure and program biasing techniques for the NVM cell structure
App 20090129162 - Poplevine; Pavel ;   et al.
2009-05-21
Non-volatile memory cell with improved programming technique and density
Grant 7,453,726 - Poplevine , et al. November 18, 2
2008-11-18
Low power ROM architecture
Grant 7,126,866 - Poplevine , et al. October 24, 2
2006-10-24
High density ROM architecture
Grant 6,642,587 - Poplevine , et al. November 4, 2
2003-11-04

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