Hisamoto; Yoshiaki
Patent Applications and Registrations
Patent applications and USPTO patent grants for Hisamoto; Yoshiaki.The latest application filed is for "semiconductor device".
- Hisamoto; Yoshiaki - Tokyo JP
- Hisamoto; Yoshiaki - Chiyoda-ku JP
- Hisamoto; Yoshiaki - Itami JP
| Patent | Date |
|---|---|
| Power semiconductor device having an active region and an electric field reduction region Grant 8,742,474 - Hisamoto , et al. June 3, 2 | 2014-06-03 |
| Semiconductor device with peripheral base region connected to main electrode Grant 8,692,323 - Hatade , et al. April 8, 2 | 2014-04-08 |
| Semiconductor device Grant 8,274,095 - Hisamoto September 25, 2 | 2012-09-25 |
| Semiconductor device Grant 8,183,631 - Hatade , et al. May 22, 2 | 2012-05-22 |
| Semiconductor Device App 20120080744 - HATADE; Kazunari ; et al. | 2012-04-05 |
| Semiconductor Device App 20110227128 - HISAMOTO; Yoshiaki | 2011-09-22 |
| Semiconductor device with increased withstand voltage Grant 8,017,974 - Hisamoto September 13, 2 | 2011-09-13 |
| Semiconductor Device App 20090184338 - HISAMOTO; Yoshiaki | 2009-07-23 |
| Power Semiconductor Device And Manufacturing Method Therefor App 20090014753 - Hisamoto; Yoshiaki ; et al. | 2009-01-15 |
| Semiconductor Device App 20070096166 - HATADE; KAZUNARI ; et al. | 2007-05-03 |
| Semiconductor device having enhanced di/dt tolerance and dV/dt tolerance Grant 7,180,106 - Hatade , et al. February 20, 2 | 2007-02-20 |
| Semiconductor device App 20030132499 - Hatade, Kazunari ; et al. | 2003-07-17 |
| Power semiconductor device containing at least one zener diode provided in chip periphery portion Grant 6,580,121 - Hisamoto June 17, 2 | 2003-06-17 |
| Power semiconductor device containing at least one zener diode provided in chip periphery portion App 20020088991 - Hisamoto, Yoshiaki | 2002-07-11 |
| Method of manufacturing a semiconductor device having a polycrystalline electrode region Grant 5,246,877 - Hisamoto , et al. September 21, 1 | 1993-09-21 |
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